ECE 730 Topic 10 - Advanced Technologies for Semiconductor Processing
Instructor:
Professor
Siva
Sivoththaman
Lecture
hours:
Three
lectures
per
week.
Room:
To
be
announced.
Course description
This course is intended to provide the students with the fundamentals, technological approaches, and practices in the fabrication of micro- and nano- electronic devices. Modern process technologies and design aspects for advanced devices will be covered along with the underlying theoretical concepts. Current device applications and future directions will also be discussed.
Course outline
-
Crystal
growth
(2h)
- Processes and mechanisms for semiconductor bulk crystals; Czochralski and Float-zone processes; Process control and models
-
Thin
film
deposition
(3h)
- Physical and chemical vapor deposition; Atomic layer deposition; Plasma processes; Molecular beam and liquid phase epitaxy
-
Plasma
etching
processes
(3h)
- RF glow discharges and plasma kinetics; Plasma-surface interaction and process control; Reactive ion etching
-
Synthesis
of
nanostructures
(4h)
- Top-down and bottom-up approaches; zero-, one-, and two- dimensional structures; Nanotubes; Assembly of nanoparticles
-
Junction
formation
processes
(3h)
- Thermal processes in dopant diffusion; Ion implantation; Epitaxial processes; Formation of heterojunctions
-
Dielectric
films
(2h)
- Thermal oxidation; Growth kinetics and interface quality; Plasma deposition of dielectric films; Evaluation methods
-
Lithography
(3h)
- Optical lithography fundamentals; Types of photoresists; Exposure techniques; Sub-micron processing; Limits of optical lithography
-
Nano-patterning
(3h)
- Electron beam lithography; Nano-imprint lithography; Scanning probe techniques; Atomic scale manipulation
-
Transistor
fabrication
and
CMOS
(3h)
- Basics of MOS transistor fabrication; Process sequence; Layout design; Technological steps; Future trends
-
Fabrication
of
Thin
film
devices
(3h)
- Processes for thin film transistors; Circuit implementation; Large area display and photovoltaic applications
-
MEMS
fabrication
(4h)
- Introduction to MEMS and application areas; Surface and bulk micromachining; Selective and directional etching; Microstructure release; Wafer bonding processes
-
Nanoelectronic
device
fabrication
(3h)
- Trends in future nanoelectronic devices and fabrication options; Quantum effect, tunneling, and single-electron devices
Marking scheme
Project/assignments: 40%, Final exam: 60%
Other activity
As part of the course, the students will take part in guided visits to nano- and micro- fabrication facilities on campus.
Text book
Course Notes