Research Process Specialist
His responsibilities are lab user training, process development, research project supporting, and tool troubleshooting/maintenance. He also provides consultation and education on micro/nano-fabrication developments and solid state devices.
Czang-Ho Lee received the Ph.D. degree in electrical engineering from the University of Waterloo in 2006. From 2006-2012, Dr. Lee worked in Samsung Electronics, South Korea, as a senior research staff.
His research interests include thin film materials and devices for display, sensor, memory, and photovoltaic applications, including mechanically flexible electronic devices and 2-D materials.
Dr. Lee was the recipient of the Graduate Student Award at the Material Research Society (MRS) spring meeting in 2006 and is also author/co-author of about 100 articles including technical papers and U.S. patents (11 issued patents).
Publications (in 5 years)
-Qing Li, Czang-Ho Lee, Mohsen Asad, William S. Wong, and Manoj Sachdev, “CMOS-Like Logic Circuits with Unipolar Thin-Film Transistors on Flexible Substrate”, IEEE Trans. Electron Devices, vol. 67, 512-517, 2020.
-Qing Li, Czang-Ho Lee, Mohsen Asad, William S. Wong, and Manoj Sachdev, “A 6-TFT Charge-Transfer Self-Compensating Pixel Circuit for Flexible Displays” appeared in IEEE J. Electron Devices Society vol. 7, 792-800, 2019 (appeared in special issue).
-Mohsen Asad, Qing Li, Czang-Ho Lee, Manoj Sachdev, and William S. Wong, “Integration of GaN Light-emitting Diodes with a-Si:H Thin-film Transistors for Flexible Displays” Nanotechnology, vol. 30, 324003, 2019 (appeared in special issue).
-Muhammad A. Martuza, Czang-Ho Lee, Andrei Sazonov, Slim Boumaiza, and Karim S. Karim, “Wireless LC-type Passive Humidity Sensor using Large-area RF Magnetron Sputtered ZnO films”, IEEE Trans. Electron Devices, vol. 65, 3447-3453, 2018.
-Ruifeng Yang, Czang-Ho Lee, Bo Cui, and Andrei Sazonov, “Flexible semi-transparent a-Si:H pin solar cells for functional energy-harvesting applications”, Materials Science and Engineering: B, vol. 229, 1-5, 2018.
-Muhammad A. Martuza, Sina Ghanbarzadeh, Czang-Ho Lee, Celal Con, and Karim S. Karima, “Nanocrystalline Silicon Lateral MSM Photodetector for Infrared Sensing Applications”, IEEE Trans. Electron Devices, vol. 65, 584-590, 2018.
-Bright C. Iheanacho, Czang-Ho Lee, and William S. Wong, “Hybrid ZnO Core–a-Si:H Shell Infrared Photodetectors Integrated With Thin-Film Transistors”, IEEE Electron Device Lett., vol. 38, 1688-1691, 2017.
-Sunil Sanjeevi, Qing Li, Czang-Ho Lee, William S. Wong, and Manoj Sachdev, “Effect of Charge Retention of Non-Volatile Memory TFTs Under Multiple Read Cycles”, IEEE J. Electron Devices Society, vol. 5, 266-270, 2017.
-Czang-Ho Lee, Nikolas P. Papadopoulos, Manoj Sachdev, and William S. Wong, “Effect of mechanical strain on hydrogenated amorphous silicon thin-film Transistors and Compensation Circuits on Flexible Substrates”, IEEE Trans. Electron Devices, vol. 64, 2016-2021, 2017 (appeared in special issue).
-Nikolas P. Papadopoulos, Czang-Ho Lee, Alireza Tari, William S. Wong, and Manoj Sachdev, “Low-power bootstrapped rail-to-rail logic gates for thin film applications”, J. Display Technol., vol. 12, 1539-1546, 2016.
-Czang-Ho Lee, Nicholas Vardy, and William S. Wong, “Multilayer MoS2 thin-film transistors employing plasma-enhanced chemical vapor deposition gate dielectrics”, IEEE Electron Device Lett., vol. 26, 637-639, 2016.
-Czang-Ho Lee, William S. Wong, Andrei Sazonov, and Arokia Nathan, “Study of deposition temperature on high crystallinity nanocrystalline silicon thin films with in-situ hydrogen plasma-passivated grains”, Thin Solid Films, vol. 597, 151-157, 2015.
-M. Pathirane, B. Iheanacho, A. Tamang, C.-H. Lee, R. Lujan, D. Knipp, and W. S. Wong, “Hybrid ZnO nanowire/a-Si:H thin-film radial junction solar cells using nanoparticle front contacts,” Appl. Phys. Lett., vol. 107, 143903, 2015.
-Alireza Tari, Czang-Ho Lee, and William S. Wong, “Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors”, Appl. Phys. Lett., vol. 107, 023501, 2015.