Atomic scale study of Dirac materials: graphene and topological insulator (Bi2Se3)
Graphene and topological insulator Bi2Se3 are newly discovered Dirac materials with exotic physical and electronic properties. The molecular beam epitaxy (MBE) and in situ characterization at atomic scale of the materials are demonstrated in this talk. Artificial defects of graphene are created by Ar for extending its functions. Their structural, electronic properties and charge state were studied by scanning tunneling microscopy (STM) and q-plus atomic force microscopy (q-plus AFM ), respectively.
Quantum entanglement for precision sensing with atoms and light
Onur Hosten, Stanford University
In the last decades, advances in the level of precision in controlling atomic and optical systems opened up the low-energy precision frontier to fundamental physics tests in addition to yielding new applied sensing technologies. In this talk I will focus on our experiments with cold atoms highlighting some of the most recent developments in the prospect of using quantum entanglement to further improve the precision of atomic and optical sensors.