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DTSTART:20170312T070000
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UID:69db59abe4242
DTSTART;TZID=America/Toronto:20180112T114500
SEQUENCE:0
TRANSP:TRANSPARENT
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URL:https://uwaterloo.ca/institute-for-quantum-computing/events/rac1-journa
 l-clubseminar-series-16
LOCATION:RAC - Research Advancement Centre 475 Wes Graham Way 2009 Waterloo
  ON N2L 6R2 Canada
SUMMARY:RAC1 Journal Club/Seminar Series
CLASS:PUBLIC
DESCRIPTION:BRANDON BUONACORSI - MODELING THE EXCHANGE INTERACTION IN SILI
 CON\nQUANTUM DOTS\n\nSilicon metal-oxide-semiconductor field effect transi
 stor_ (_MOSFET)\nquantum dots are promising candidates for scalable quant
 um computing\nusing electron spin qubits due to their long coherence times
 \, compact\nsize\, and ease of integration into existing fabrication\ntech
 nologies.  I will introduce how we fabricate these devices and\ndescribe
  the experimental characterizations we do to check the\nstability and tuna
 bility of our quantum dots.  In a double quantum\ndot device\, two qubit
  gates are realized
DTSTAMP:20260412T083659Z
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