Probing silicon surfaces with magnetic resonance

Chandrasekhar Ramanathan

Silicon is a technologically versatile material – ubiquitous in microelectronics, solar cells, MEMS sensors, and a promising platform for spin-based quantum devices and computers. The paramagnetic dangling bonds defects present at almost all silicon surfaces – at the interface between the silicon and a surface oxide layer – can provide a highly-localized source of electronic spins that can be used to probe both local physics and chemistry. In this talk I will discuss two examples of our recent work where we exploit these dangling bond spins to probe local physics and chemistry of these surfaces using different magnetic resonance techniques.