Contact Waterloo Institute for Nanotechnology
Mike & Ophelia Lazaridis Quantum-Nano Centre, Room 3606
University of Waterloo
200 University Ave. W.
Waterloo, ON. N2L 3G1
+1 519 888 4567, ext.38654
Research interests: amorphous and nanocrystalline silicon electronics on flexible substrates; flexible thin film solar cells; synthesis of new multifunctional nanostructures
A main focus of Professor Andrei Sazonov’s research is the development of materials and low-temperature techniques for the fabrication of low cost, flexible electronics. Nano-crystalline silicon is another focus of Sazonov’s research because it can be deposited over larger areas. The maximum size of a crystalline silicon wafer is only 13 inches in diameter; nano-crystalline silicon, on the other hand, can be deposited over several square metres. This will make the fabrication process simpler and potentially cheaper, because it will be possible for more devices to be fabricated in the same run or even printed through a roll-to-roll process, much like newspaper press printing.
Sazonov was born in Ostrov, Russia, in 1968. He received the Dipl.Eng. and Ph.D. degrees in electrical engineering from Moscow Institute of Electronic Technology (Technical University), Moscow, Russia, in 1991 and 1997, respectively. From 1991 to 1993, he was a Research Engineer with Materials Science Department, Moscow Institute of Electronic Technology, and Research Engineer at Elma Corp., and Mikron Semiconductors Corp. (Moscow, Russia). From 1995 to 1996, he was a Visiting Research Fellow at the Institute of Physical Electronics, University of Stuttgart, Germany, under a German Academic Exchange Service (DAAD) scholarship.
In 1998, he joined Electrical and Computer Engineering Department, University of Waterloo, as a Post-doctoral Research Associate; in 2000, he became an Assistant Professor and the DALSA/Natural Sciences and Engineering Research Council of Canada (NSERC) Industrial Junior Research Chair in sensor technology, and since July 2006, he serves as an Associate Professor. His research interests include thin film technology, amorphous, nanocrystalline, and polycrystalline semiconductors and dielectrics, and their device applications (solar cells, radiation sensors, memory devices, RF ID tags) for flexible electronics.
Sazonov is a recipient of a 2004 Institute of Electrical and Electronics Engineers Institution Premium, 2002 Ontario Premier’s Research Excellence Award, 2001 Canadian Foundation for Innovation New Opportunities Award, and 1997 Outstanding Young Scientist Research Fellowship of Russian Academy of Sciences. He is a member of the Institute of Electrical and Electronics Engineers, the Institution of Engineering and Technology, the Materials Research Society, the Electrochemical Society, the Society for Information Displays, and Professional Engineers Ontario.
- PhD, Moscow Institute of Electronic Technology, Russia, 1997
- Dipl.Eng, Moscow Institute of Electronic Technology, Russia, 1991
- Thin film material and process technologies for optical and X-ray sensors and thin film transistors for large area digital imaging of X-ray and optical signals
- Nanocrystalline silicon, silicon nitride/oxide thin film deposition at low temperatures
- Amorphous and nanocrystalline silicon electronics on flexible substrates
- Thin film silicon solar cells on flexible substrates
- Thin film moisture barriers for organic electronics
- Nanocrystalline semiconductors and nanodevices
- Vygranenko, Yuri; Fernandes, Miguel; Sazonov, Andrei; Vieira, Manuela, “Driving Scheme Using MIS Photosensor for Luminance Control of AMOLED Pixel”, Journal of Display Technology, 9(8), pp651-655 (2013)
- Moradi, Maryam; Pathirane, Minoli; Sazonov, Andrei; Chaji, Reza; Nathan, Arokia, “TFTs With High Overlay Alignment for Integration of Flexible Display Backplanes”, Journal of Display Technology, 8(2), pp104-107 (2012)
- Vygranenko, Y.; Sazonov, A.; Fernandes, M.; Vieira, M., “Photodiode with nanocrystalline Si/amorphous Si absorber bilayer”, Applied Physics Letters, 99(19), (2011)
- Fathi, E.; Vygranenko, Y.; Vieira, M.; Sazonov, A., “Boron-doped nanocrystalline silicon thin films for solar cells”,Applied Surface Science, 257(21), pp8901-8905 (2011)
- Esmaeili-Rad, M. R.; Chaji, G. R.; Li, F.; Moradi, M.; Sazonov, A.; Nathan, A., “Impact of Silicon Nitride Gate Dielectric Composition on the Stability of Low Temperature Nanocrystalline Silicon Thin Film Transistors”, (Ed. Sah, RE),Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11, 35(4), pp73-79 (2011)
- Chan, Isaac; Moradi, Maryam; Sazonov, Andrei; Nathan, Arokia, “150 degrees C Amorphous Silicon Thin Film Transistors With Low-Stress Nitride on Transparent Plastic”,Journal of Display Technology, 7(1), pp36-39 (2011)
- Bauza, Marius; Ahnood, Arman; Li, Flora M.; Vygranenko, Yuriy; Esmaeili-Rad, Mohammad R.; Chaji, G.; Sazonov, Andrei; Robertson, John; Milne, William I.; Nathan, Arokia, “Photo-Induced Instability of Nanocrystalline Silicon TFTs”,Journal of Display Technology, 6(12), pp589-591 (2010)
- Vygranenko, Y.; Fathi, E.; Sazonov, A.; Vieira, M.; Nathan, A., “Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodes”, Solar Energy Materials and Solar Cells, 94(11), pp1860-1863 (2010)
- Vygranenko, Yuri; Nathan, Arokia; Vieira, Manuela; Sazonov, Andrei, “Phototransistor with nanocrystalline Si/amorphous Si bilayer channel”, Applied Physics Letters, 96(17), (2010)
- Fathi, Ehsanollah; Sazonov, Andrei, “Optimization of Semi-Transparent Amorphous Silicon Solar Cells for Building Integrated Applications”, 35th IEEE Photovoltaic Specialists Conference, pp1500-1504 (2010)
- Rad, M. R. E.; Chaji, G. R.; Lee, C. -H.; Striakhilev, D.; Sazonov, A.; Nathan, A., “Nanocrystalline Silicon Thin Film Transistors”, (Ed. Kuo, Y.), Thin Film Transistors 10 (TFT 10), 33(5), pp205-212 (2010)