Zbig Wasilewski's Publications

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2014:

  • R. S. Dhar, S. G. Razavipour, E. Dupont, C. Xu, S. Laframboise, Z. Wasilewski, Q. Hu, and D. Y. Ban, "Direct Nanoscale Imaging of Evolving Electric Field Domains in Quantum Structures",Scientific Reports 4, 7183 (2014).
  • G. Liang, E. Dupont, S. Fathololoumi, Z. R. Wasilewski, D. Ban, H. K. Liang, Y. Zhang, S. F. Yu, L. H. Li, A. G. Davies, E. H. Linfield, H. C. Liu, and Q. J. Wang, "Planar integrated metasurfaces for highly-collimated terahertz quantum cascade lasers", Scientific Reports 4, 7083 (2014).
  • G. Muziol, H. Turski, M. Siekacz, P. Wolny, M. Sawicka, S. Grzanka, P. Perlin, T. Suski, Z. Wasilewski, and I. Grzegory, "True‐blue laser diodes grown by plasma‐assisted MBE on bulk GaN substrates", phys. status solidi (c) 11, 666-669 (2014).
  • C. Skierbiszewski, H. Turski, G. Muziol, M. Siekacz, M. Sawicka, G. Cywinski, Z. R. Wasilewski, and S. Porowski, "Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy", Journal of Physics D-Applied Physics 47, 18 (2014).
  • A. T. Jiang, A. Matyas, K. Vijayraghavan, C. Jirauschek, Z. R. Wasilewski, and M. A. Belkin, "Experimental investigation of terahertz quantum cascade laser with variable barrier heights", J. Appl. Phys. 115, 5 (2014).
  • C. Skierbiszewski, H. Turski, G. Muziol, P. Wolny, G. Cywiński, S. Grzanka, J. Smalc-Koziorowska, M. Sawicka, P. Perlin, Z. R. Wasilewski, and S. Porowski, "AlGaN cladding-free 482 nm continuous wave nitride laser diodes grown by plasma-assisted molecular beam epitaxy", J. Vac. Sci. Technol. B 32, 02C112 (2014).
  • A. Sachrajda, G. Poulin-Lamarre, J. Thorgrimson, S. Studenikin, G. Aers, A. Kam, P. Zawadzki, and Z. Wasilewski, "Quantum Interference between Three Spin Qubits", Bull. Am. Phys. Soc. 59 (2014).

2013:

  • M. Busl, G. Granger, L. Gaudreau, R. Sanchez, A. Kam, M. Pioro Ladriere, S. A. Studenikin, ZawadzkiP, Z. R. Wasilewski, A. S. Sachrajda, and G. Platero , "Bipolar spin blockade and coherent state superpositions in a triple quantum dot", Nature Nanotechnology 8, 261-265 (2013).
  • P. Patimisco, G. Scamarcio, M. V. Santacroce, V. Spagnolo, M. S. Vitiello, E. Dupont, S. R. Laframboise, S. Fathololoumi, G. S. Razavipour, and Z. Wasilewski, "Electronic temperatures of terahertz quantum cascade active regions with phonon scattering assisted injection and extraction scheme", Opt.Expr. 21, 10172-10181 (2013).
  • S. Fathololoumi, E. Dupont, Z. Wasilewski, C. Chan, S. Razavipour, S. Laframboise, S. Huang, Q. Hu, D. Ban, and H. Liu, "Effect of oscillator strength and intermediate resonance on the performance of resonant phonon-based terahertz quantum cascade lasers", J. Appl. Phys. 113, 113109-113109-17 (2013).
  • S. G. Razavipour, E. Dupont, S. Fathololoumi, C. W. I. Chan, M. Lindskog, Z. R. Wasilewski, G. Aers, S. R. Laframboise, A. Wacker, Q. Hu, D. Ban, and H. C. Liu, "An indirectly pumped terahertz quantum cascade laser with low injection coupling strength operating above 150 K", J. Appl. Phys. 113, 203107-14 (2013).
  • S. Studenikin, G. Aers, G. Granger, L. Gaudreau, A. Kam, P. Zawadzki, Z. Wasilewski, and A. Sachrajda, "Coherent manipulation of three‐spin states in a GaAs/AlGaAs triple dot device", phys. status solidi (c) 10, 752–755 (2013).
  • H. Turski, M. Siekacz, Z. Wasilewski, M. Sawicka, S. Porowski, and C. Skierbiszewski, "Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers", J. Cryst. Growth 367, 115-121 (2013).
  • C. Skierbiszewski, M. Siekacz, H. Turski, G. Muziol, M. Sawicka, P. Perlin, Z. R. Wasilewski, and S. Porowski, "MBE fabrication of III-N-based laser diodes and its development to industrial system", J. Cryst. Growth 378, 278-282 (2013).
  • Xu, S. G. Razavipour, Z. Wasilewski, and D. Ban, "An investigation on optimum ridge width and exposed side strips width of terahertz quantum cascade lasers with metal-metal waveguides", Opt.Expr. 21, 31951-31959 (2013).
  • S. G. Razavipour, E. Dupont, C. W. I. Chan, M. Lindskog, Z. R. Wasilewski, C. Xu, S. R. Laframboise, A. Wacker, Q. Hu, and D. Ban, “A wideband high carrier injection terahertz quantum cascade laser based on indirect pumped scheme,” in print, Applied Physics Letters
  • W. Desrat, B. A. Piot, S. Kramer, D. K. Maude, Z. R. Wasilewski, M. Henini, and R. Airey, "Dispersive line shape in the vicinity of the n= 1 quantum Hall state: Coexistence of Knight shifted and unshifted RDNMR responses", in press, Phys. Rev. B rapid communication.

2012:

  • Z. R. Wasilewski, “Molecular Beam Epitaxy of THz Quantum Cascade Lasers”, in Molecular Beam Epitaxy, edited by M. Hennini (Elsevier, 2012).
  • L. Gaudreau, G. Granger, A. Kam, G. C. Aers, S. A. Studenikin, P. Zawadzki, M. Pioro-Ladriere, Z. R. Wasilewski, and A. S. Sachrajda, "Coherent control of three-spin states in a triple quantum dot", Nature Physics 8, 54-58 (2012).
  • G. Granger, D. Taubert, C. E. Young, L. Gaudreau, A. Kam, S. A. Studenikin, P. Zawadzki, D. Harbusch, D. Schuh, W. Wegscheider, Z. R. Wasilewski, A. A. Clerk, S. Ludwig, and A. S. Sachrajda, "Quantum interference and phonon-mediated back-action in lateral quantum-dot circuits", Nature Physics 8, 522-527 (2012).
  • S. A. Studenikin, G. Granger, A. Kam, A. S. Sachrajda, Z. R. Wasilewski, and P. J. Poole, "Nonlinear magnetotransport phenomena in high-mobility two-dimensional electrons in InGaAs/InP and GaAs/AlGaAs", Phys. Rev. B 86, 115309 (2012).
  • S. A. Studenikin, G. C. Aers, G. Granger, L. Gaudreau, A. Kam, P. Zawadzki, Z. R. Wasilewski, and A. S. Sachrajda, "Quantum Interference between Three Two-Spin States in a Double Quantum Dot", Phys. Rev. Lett. 108, 226802 (2012).
  • S. Fathololoumi, E. Dupont, C. W. I. Chan, Z. R. Wasilewski, S. R. Laframboise, D. Ban, A. Mátyás, C. Jirauschek, Q. Hu, and H. C. Liu, "Terahertz quantum cascade lasers operating up to  200 K with optimized oscillator strength and improved injection tunneling", Opt. Express 20, 3866-3876 (2012).
  • G. C. Aers, S. A. Studenikin, G. Granger, A. Kam, P. Zawadzki, Z. R. Wasilewski, and A. S. Sachrajda, "Coherent exchange and double beam splitter oscillations in a triple quantum dot", Phys. Rev. B 86, 045316 (2012).
  • M. J. Smith, A. Usher, C. D. H. Williams, A. Shytov, A. S. Sachrajda, A. Kam, and Z. R. Wasilewski, "Induced currents in the quantum Hall regime: Energy storage, persistence, and I-V characteristics", Phys. Rev. B 86 (2012).
  • C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, G. Cywiński, C. Cheze, S. Grzanka, P. Perlin, P. Wiśniewski, Z. R. Wasilewski, and S. Porowski, "AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy", Appl.Phys.Expr. 5, 022104 (2012).
  • C. Skierbiszewski, M. Siekacz, H. Turski, G. Muziol, M. Sawicka, P. Wolny, G. Cywinski, L. Marona, P. Perlin, P. Wisniewski, M. Albrecht, Z. R. Wasilewski, and S. Porowski, "True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy", Appl.Phys.Expr. 5 (2012).
  • S. A. Studenikin, J. Thorgrimson, G. C. Aers, A. Kam, P. Zawadzki, Z. R. Wasilewski, A. Bogan, and A. S. Sachrajda, "Enhanced charge detection of spin qubit readout via an intermediate state", Appl. Phys. Lett. 101, 233101-3 (2012).
  • E. Dupont, S. Fathololoumi, Z. R. Wasilewski, G. Aers, S. R. Laframboise, M. Lindskog, S. G. Razavipour, A. Wacker, D. Ban, and H. C. Liu, "A phonon scattering assisted injection and extraction based terahertz quantum cascade laser", J. Appl. Phys. 111, 073111-10 (2012).
  • M. Molas, K. Golasa, K. Kuldova, J. Borysiuk, A. Babinski, J. Lapointe, and Z. R. Wasilewski, "The effect of In-flush on the optical anisotropy of InAs/GaAs quantum dots", J. Appl. Phys. 111, 033510-4 (2012).
  • P. K. D. D. P. Pitigala, S. G. Matsik, A. G. U. Perera, S. P. Khanna, L. H. Li, E. H. Linfield, Z. R. Wasilewski, M. Buchanan, and H. C. Liu, "Photovoltaic infrared detection with p-type graded barrier heterostructures", J. Appl. Phys. 111, 084505-5 (2012).
  • M. Molas, K. Golasa, N. Furman, J. Lapointe, Z. R. Wasilewski, M. Potemski, and A. Babinski, "The Fine Structure of a Triexciton in Single In As/GaAs Quantum Dots", Acta Phys. Pol.A 122, 991-993 (2012).
  • C. Skierbiszewski, M. Siekacz, H. Turski, G. Muziol, M. Sawicka, A. Feduniewicz-Zmuda, J. Smalc-Koziorowska, P. Perlin, S. Grzanka, Z. R. Wasilewski, R. Kucharski, and S. Porowski, "InGaN laser diodes operating at 450--460 nm grown by rf-plasma MBE", J. Vac. Sci. Technol. B 30, 02B102-5 (2012).
  • L. Nadvornik, M. Orlita, N. A. Goncharuk, L. Smrcka, V. Novak, V. Jurka, K. Hruska, Z. Vyborny, Z. R. Wasilewski, M. Potemski, and K. Vyborny, "From laterally modulated two-dimensional electron gas towards artificial graphene", New J. Phys. 14 (2012).

2011

  • R. Zhang, X. G. Guo, C. Y. Song, M. Buchanan, Z. R. Wasilewski, J. C. Cao, and H. C. Liu, "Metal-Grating-Coupled Terahertz Quantum-Well Photodetectors", IEEE Electron Device Lett. 32, 659-661 (2011).
  • Y. Yang, H. C. Liu, W. Z. Shen, J. A. Gupta, H. Luo, M. Buchanan, and Z. R. Wasilewski, "GaAs-based near-infrared up-conversion device fabricated by wafer fusion", Electron. Lett. 47, 393-394 (2011).
  • H. Turski, M. Siekacz, M. Sawicka, G. Cywinski, M. Krysko, S. Grzanka, J. Smalc-Koziorowska, I. Grzegory, S. Porowski, Z. R. Wasilewski, and C. Skierbiszewski, "Growth mechanism of InGaN by plasma assisted molecular beam epitaxy", J. Vac. Sci. Technol. B 29, 03C136 - 03C136-5 (2011).
  • F. Teppe, C. Consejo, J. Torres, B. Chenaud, P. Solignac, Z. R. Wasilewski, S. Fathololoumi, M. Zholudev, N. Dyakonova, D. Coquillat, A. ElFatimy, P. Buzatu, and W. Knap, "Terahertz Detection of Quantum Cascade Laser Emission by Plasma Waves in Field Effect Transistors", Acta Phys. Pol.A, in print (2011).
  • M. J. Smith, C. D. H. Williams, A. Shytov, A. Usher, A. S. Sachrajda, A. Kam, and Z. R. Wasilewski, "Quantum Hall induced currents and the magnetoresistance of a quantum point contact", New J. Phys. 13, 123020 (2011).
  • C. Skierbiszewski, M. Siekacz, H. Turski, M. Sawicka, A. Feduniewicz-Żmuda, P. Perlin, T. Suski, Z. Wasilewski, I. Grzegory, and S. Porowski, "InAlGaN Laser Diodes Grown by Plasma Assisted Molecular Beam Epitaxy", Lithuanian J. Phys. 51, 276-282 (2011).
  • M. Siekacz, M. Sawicka, H. Turski, G. Cywinski, A. Khachapuridze, P. Perlin, T. Suski, M. Bockowski, J. Smalc-Koziorowska, M. Krysko, R. Kudrawiec, M. Syperek, J. Misiewicz, Z. Wasilewski, S. Porowski, and C. Skierbiszewski, "Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy", J. Appl. Phys. 110, 063110 (2011).
  • A. G. U. Perera, S. G. Matsik, D. P. Pitigala, Y. F. Lao, S. P. Khanna, L. H. Li, E. H. Linfield, Z. R. Wasilewski, M. Buchanan, X. H. Wu, and H. C. Liu, "Effects of graded barriers on the operation of split-off band infrared detectors", Infrared Phys. Tech. 54, 296-301 (2011).
  • M. Molas, K. Kuldova, J. Borysiuk, Z. Wasilewski, and A. Babinski, "Quantum Confinement in InAs/GaAs Systems with Self-Assembled Quantum Dots Grown Using In-Flush Technique", Acta Phys. Pol.A 119, 624-626 (2011).
  • T. Kazimierczuk, A. Golnik, P. Kossacki, J. A. Gaj, Z. R. Wasilewski, and A. Babiński, "Single-photon emission from the natural quantum dots in the InAs/GaAs wetting layer", Phys. Rev. B 84, 115325 (2011).
  • S. Hinds, M. Buchanan, R. Dudek, S. Haffouz, S. Laframboise, Z. R. Wasilewski, and H. C. Liu, "Near-Room-Temperature Mid-Infrared Quantum Well Photodetector", Advanced Materials 23, 5536-5539 (2011).
  • S. Fathololoumi, E. Dupont, S. G. Razavipour, S. R. Laframboise, G. Parent, Z. Wasilewski, H. C. Liu, and D. Ban, "On metal contacts of terahertz quantum cascade lasers with a metal–metal waveguide", Semicond. Sci. Technol. 26, 105021 (2011).

2010

  • H. Yuyang, H. C. Liu, Z. R. Wasilewski, M. Buchanan, S. R. Laframboise, C. Yang, G. Cui, L. Bian, H. Yang, and Y. Zhang, "High contrast ratio, high uniformity multiple quantum well spatial light modulators", Chinese J. Semicond. 31, 034007 (2010).
  • Z. R. Wasilewski, E. Dupont, J. L. Weyher, S. Laframboise, M. Buchanan, and H. C. Liu, "On the existence of submicron diameter current shunts in morphologically perfect device layers", J. Cryst. Growth 312, 926-932 (2010).
  • Y. F. Lao, P. K. D. D. P. Pitigala, A. G. U. Perera, H. C. Liu, M. Buchanan, Z. R. Wasilewski, K. K. Choi, and P. Wijewarnasuriya, "Light-hole and heavy-hole transitions for high-temperature long-wavelength infrared detection", Appl. Phys. Lett. 97, 091104-3 (2010).
  • Y. F. Lao, P. V. V. Jayaweera, S. G. Matsik, A. G. U. Perera, H. C. Liu, M. Buchanan, and Z. R. Wasilewski, "Analysis of Dark Current Mechanisms for Split-Off Band Infrared Detectors at High Temperatures", Electron Devices, IEEE Transactions on 57, 1230-1236 (2010).
  • G. Granger, L. Gaudreau, A. Kam, L. Pioro, egrave, M. re, S. A. Studenikin, Z. R. Wasilewski, P. Zawadzki, and A. S. Sachrajda, "Three-dimensional transport diagram of a triple quantum dot", Phys. Rev. B 82, 075304 (2010).
  • O. M. Fedorych, M. Potemski, S. A. Studenikin, J. A. Gupta, Z. R. Wasilewski, and I. A. Dmitriev, "Quantum oscillations in the microwave magnetoabsorption of a two-dimensional electron gas", Phys. Rev. B 81, 201302 (2010).
  • S. Fathololoumi, E. Dupont, S. G. Razavipour, S. R. Laframboise, Z. R. Wasilewski, D. Ban, and H. C. Liu, "Electrically Controlling Beam Pattern of THz Quantum Cascade Lasers", presented at the Conference on Lasers and Electro-Optics (CLEO), San Jose, CA May 2010 (2010).
  • S. Fathololoumi, E. Dupont, S. G. Razavipour, S. R. Laframboise, A. Delage, Z. R. Wasilewski, A. Bezinger, G. Z. Rafi, S. Safavi-Naeini, D. Ban, and H. C. Liu, "Electrically switching transverse modes in high power THz quantum cascade lasers", Opt. Express 18, 10036-10048 (2010).
  • S. Fathololoumi, E. Dupont, D. Ban, M. Graf, S. R. Laframboise, Z. R. Wasilewski, and H. C. Liu, "Time-Resolved Thermal Quenching of THz Quantum Cascade Lasers", IEEE J. Qunatum Electron. 46, 396-404 (2010).
  • G. Ariyawansa, Y. Aytac, A. G. U. Perera, S. G. Matsik, M. Buchanan, Z. R. Wasilewski, and H. C. Liu, "Five-band bias-selectable integrated quantum well detector in an n-p-n architecture", Appl. Phys. Lett. 97, 231102-3 (2010).
  • V. Apalkov, G. Ariyawansa, A. G. U. Perera, M. Buchanan, Z. R. Wasilewski, and H. C. Liu, "Polarization Sensitivity of Quantum Well Infrared Photodetector Coupled to a Metallic Diffraction Grid", IEEE J. Qunatum Electron. 46, 877-883 (2010).

2009

  • Y. Yang, H. C. Liu, W. Z. Shen, N. Li, W. Lu, Z. R. Wasilewski, and M. Buchanan, "Optimal Doping Density for Quantum-Well Infrared Photodetector Performance", IEEE J. Qunatum Electron. 45, 623-628 (2009).
  • C. Wang, L. Kuznetsova, V. Gkortsas, L. Diehl, F. X. Kärtner, M. A. Belkin, A. Belyanin, X. Li, D. Ham, H. Schneider, P. Grant, S. Haffouz, Z. R. Wasilewski, H. C. Liu, and F. Capasso, "Mode-locked pulses from mid-infrared Quantum Cascade Lasers", Opt. Express 17, 12929-12943 (2009).
  • M. Vachon, S. Raymond, A. Babinski, J. Lapointe, Z. Wasilewski, and M. Potemski, "Energy shell structure of a single InAs/GaAs quantum dot with a spin-orbit interaction", Phys. Rev. B 79, 165427-6 (2009).
  • Z. Y. Tan, X. G. Guo, J. C. Cao, H. Li, X. Wang, S. L. Feng, Z. R. Wasilewski, and H. C. Liu, "Temperature dependence of current-voltage characteristics of terahertz quantum-well photodetectors", Semicond. Sci. Technol. 24, 115014 (2009).
  • C. Skierbiszewski, Z. R. Wasilewski, I. Grzegory, and S. Porowski, "Nitride-based laser diodes by plasma-assisted MBE--From violet to green emission", J. Cryst. Growth 311, 1632-1639 (2009).
  • A. G. U. Perera, P. V. V. Jayaweera, S. G. Matsik, H. C. Liu, M. Buchanan, and Z. R. Wasilewski, "Operating temperature and the responsivity of split-off band detectors", Infrared Phys. Tech. 52, 241-246 (2009).
  • H. C. Liu, C. Y. Song, Z. R. Wasilewski, J. A. Gupta, and M. Buchanan, "Phonon mediated photodetector", Infrared Phys. Tech. 52, 285-288 (2009).
  • H. C. Liu, C. Y. Song, Z. R. Wasilewski, J. A. Gupta, and M. Buchanan, "Designing phonons for active use in terahertz devices", presented at the Quantum Sensing and Nanophotonic Devices VI, San Jose, CA, USA,  (SPIE, 2009), Vol. 7222, p. 72220X-6.
  • H. Li, J. C. Cao, H. Luo, S. R. Laframboise, Z. R. Wasilewski, and H. C. Liu, "The effect of phonon extraction level separation on the performance of three-well resonant-phonon terahertz quantum-cascade lasers", Semicond. Sci. Technol. 24, 065012 (2009).
  • C.-K. Kim, G. M. Marshall, M. Martin, M. Bisson-Viens, Z. Wasilewski, and J. J. Dubowski, "Formation dynamics of hexadecanethiol self-assembled monolayers on (001) GaAs observed with photoluminescence and Fourier transform infrared spectroscopies", J. Appl. Phys. 106, 083518-5 (2009).
  • S. Haffouz, S. Raymond, Z. G. Lu, P. J. Barrios, D. Roy-Guay, X. Wu, J. R. Liu, D. Poitras, and Z. R. Wasilewski, "Growth and fabrication of quantum dots superluminescent diodes using the indium-flush technique: A new approach in controlling the bandwidth", J. Cryst. Growth 311, 1803-1806 (2009).
  • M. Graf, E. Dupont, H. Luo, S. Haffouz, Z. R. Wasilewski, A. J. Spring Thorpe, D. Ban, and H. C. Liu, "Terahertz quantum well infrared detectors", Infrared Phys. Tech. 52, 289-293 (2009).
  • S. Fathololoumi, D. Ban, E. Dupont, M. Graf, S. R. Laframboise, Z. R. Wasilewski, and H. C. Liu, "Thermal Quenching Analysis of THz Quantum Cascade Laser by Time-Resolved THz Pulse Measurement", presented at the Intersubband transition in quantum well (ITQW), Montreal, Canada, Sept. 6-11, 2009 (2009).
  • A. Babinski, A. Golnik, J. Borysiuk, S. Kret, P. Kossacki, J. A. Gaj, S. Raymond, M. Potemski, and Z. R. Wasilewski, "Three-dimensional localization of excitons in the InAs/GaAs wetting layer - magnetospectroscopic study", phys status solidi b 246, 850-853 (2009).
  • G. Ariyawansa, P. V. V. Jayaweera, A. G. U. Perera, S. G. Matsik, M. Buchanan, Z. R. Wasilewski, and H. C. Liu, "Normal incidence detection of ultraviolet, visible, and mid-infrared radiation in a single GaAs/AlGaAs device", Opt. Lett. 34, 2036-2038 (2009).

2008

  • S. A. Studenikin, O. N. Fedorych, D. K. Maude, M. Potemski, A. S. Sachrajda, Z. R. Wasilewski, J. A. Gupta, and L. I. Magarill, "A quasi-classical mechanism for microwave induced resistance oscillations in high mobility GaAs/AlGaAs 2DEG samples", Physica E 40, 1424-1426 (2008).
  • M. Siekacz, A. Feduniewicz-Zmuda, G. Cywinski, M. Krysko, I. Grzegory, S. Krukowski, K. E. Waldrip, W. Jantsch, Z. R. Wasilewski, S. Porowski, and C. Skierbiszewski, "Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy", J. Cryst. Growth 310, 3983-3986 (2008).
  • B. A. Piot, D. K. Maude, M. Henini, Z. R. Wasilewski, J. A. Gupta, U. Gennser, A. Cavanna, D. Mailly, R. Airey, and G. Hill, "Determination of the Landau level shape via the transition to the spin polarized state in the integer quantum Hall effect", Physica E 40, 1200-1201 (2008).
  • H. Luo, S. R. Laframboise, Z. R. Wasilewski, H. C. Liu, and J. C. Cao, "Effects of extraction barrier width on performance of terahertz quantum-cascade lasers", Electron. Lett. 44, 630-631 (2008).
  • Z. G. Lu, J. R. Liu, X. P. Zhang, S. Raymond, P. J. Poole, P. J. Barrios, D. Poitras, S. Haffouz, Z. Wasilewski, and G. Pakulski, "Multiwavelength quantum-dot semiconductor fiber ring laser", presented at the Optoelectronic Materials and Devices III, Hangzhou, China,  (SPIE, 2008), Vol. 7135, p. 713521-7.
  • Z. G. Lu, S. Haffouz, S. Raymond, J. R. Liu, P. J. Barrios, D. Poitras, Z. R. Wasilewski, and P. J. Poole, "Broadband quantum-dot superluminescent diodes at 1000 nm", presented at the SPIE the Photonics North, 41-WHMA-222, Montreal, QC, Canada, 1-4 June 2008 (2008).
  • H. C. Liu, H. Luo, C. Y. Song, Z. R. Wasilewski, A. J. SpringThorpe, and J. C. Cao, "Terahertz Quantum Well Photodetectors", Select. Topics Q. Electron. 14, 374-377 (2008).
  • H. C. Liu, H. Luo, D. Ban, M. Buchanan, Z. R. Wasilewski, A. J. SpringThorpe, and P. J. Poole, "Photon upconversion devices for imaging", presented at the Sixth International Conference on Thin Film Physics and Applications,  (SPIE, 2008), Vol. 6984, p. 698431-7.
  • H. C. Liu, B. Aslan, J. A. Gupta, Z. R. Wasilewski, G. C. Aers, A. J. SpringThorpe, and M. Buchanan, "Quantum dots for terahertz generation", J. Phys.: Condens. Matter 20, 384211 (2008).
  • P. V. V. Jayaweera, S. G. Matsik, A. G. U. Perera, H. C. Liu, M. Buchanan, and Z. R. Wasilewski, "Uncooled infrared detectors for 3--5 mu m and beyond", Appl. Phys. Lett. 93, 021105-3 (2008).
  • A. Boucherif, D. Ban, H. Luo, E. Dupont, Z. R. Wasilewski, H. C. Liu, Y. Paltiel, A. Raizman, and A. Sher, "InAsSb based mid-infrared optical upconversion devices operable at thermoelectric temperatures", Electron. Lett. 44, 312-313 (2008).
  • A. Babinski, M. Potemski, S. Raymond, and Z. R. Wasilewski, "Charged and neutral excitons in natural quantum dots in the InAs/GaAs wetting layer", Physica E 40, 2078-2080 (2008).
  • A. Babinski, M. Czyz, J. Borysiuk, S. Kret, A. Golnik, S. Raymond, J. Lapointe, and Z. R. Wasilewski, "Neutral and charged excitons localized in the InAs/GaAs wetting layer", Acta Phys. Pol.A 114, 1055-1060 (2008).
  • A. Babinski, J. Borysiuk, S. Kret, M. Czyz, A. Golnik, S. Raymond, and Z. R. Wasilewski, "Natural quantum dots in the InAs/GaAs wetting layer", Appl. Phys. Lett. 92, 171104-3 (2008).

2007

  • B. S. Williams, S. Kumar, Q. Qi, A. W. M. Lee, H. Qing, J. L. Reno, Z. R. Wasilewski, and H. C. Liu, "Terahertz Quantum Cascade Lasers", Lasers and Electro-Optics, 2007. CLEO 2007. Conference on, 1-2 (2007).
  • S. A. Studenikin, A. S. Sachrajda, J. A. Gupta, Z. R. Wasilewski, O. M. Fedorych, M. Byszewski, D. K. Maude, M. Potemski, M. Hilke, K. W. West, and L. N. Pfeiffer, "Frequency quenching of microwave-induced resistance oscillations in a high-mobility two-dimensional electron gas", Phys. Rev. B 76, 165321-6 (2007).
  • S. A. Studenikin, O. M. Fedorych, D. K. Maude, M. Potemski, A. S. Sachrajda, J. A. Gupta, Z. R. Wasilewski, and L. I. Magarill, "Experimental study of the microwave-induced resistance oscillations in high mobility 2DEG at mK temperatures", presented at the 15th International Symposium on NANOSTRUCTURES: PHYSICS AND TECHNOLOGY, 2007 Ioffe Institute, St. Petersburg, 2007 Proceedings of the 15th International Symposium "NANOSTRUCTURES: PHYSICS AND TECHNOLOGY" (2007), p. 16-17.
  • C. Skierbiszewski, M. Siekacz, P. Perlin, A. Feduniewicz-Zmuda, G. Cywinski, I. Grzegory, M. Leszczynski, Z. R. Wasilewski, and S. Porowski, "Role of dislocation-free GaN substrates in the growth of indium containing optoelectronic structures by plasma-assisted MBE", J. Cryst. Growth 305, 346-354 (2007).
  • B. A. Piot, D. K. Maude, M. Henini, Z. R. Wasilewski, J. A. Gupta, K. J. Friedland, R. Hey, K. H. Ploog, U. Gennser, A. Cavanna, D. Mailly, R. Airey, and G. Hill, "Influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors", Phys. Rev. B 75, 155332-4 (2007).
  • H. Luo, S. R. Laframboise, Z. R. Wasilewski, and H. C. Liu, "Effects of injector barrier on performance of terahertz quantum-cascade lasers", Electron. Lett. 43, 633-635 (2007).
  • H. Luo, S. R. Laframboise, Z. R. Wasilewski, G. C. Aers, H. C. Liu, and J. C. Cao, "Terahertz quantum-cascade lasers based on a three-well active module", Appl. Phys. Lett. 90, 041112-3 (2007).
  • H. C. Liu, C. Y. Song, Z. R. Wasilewski, J. A. Gupta, and M. Buchanan, "Fano resonance mediated by intersubband-phonon coupling", Appl. Phys. Lett. 91, 131121-3 (2007).
  • H. C. Liu, H. Luo, C. Y. Song, Z. R. Wasilewski, A. J. Spring Thorpe, and J. C. Cao, "Design of terahertz quantum well photodetectors", Infrared Phys. Tech. 50, 191-193 (2007).
  • H. C. Liu, D. Goodchild, M. Byloos, M. Buchanan, Z. R. Wasilewski, J. A. Gupta, A. J. SpringThorpe, and G. C. Aers, "Designs of broadband quantum-well infrared photodetectors and 8-12 µm test device results", Infrared Phys. Tech. 50, 171-176 (2007).
  • H. C. Liu, B. Aslan, J. A. Gupta, Z. R. Wasilewski, G. C. Aers, A. J. SpringThorpe, and M. Buchanan, "Quantum dots for terahertz devices", presented at the SPIE Photonics Asia, Sym. Terahertz Photonics, Beijing, China, 11-15 November 2007; Proceedings of SPIE (2007), Vol. 6840, p. 684011-1-7
  • S. Kumar, Q. Qin, B. S. Williams, Q. Hu, Z. R. Wasilewski, and H. C. Liu, "Quantum-Cascade Lasers with One-Well Injector Operating at 1.59 THz (l = 188.5 mmm)", presented at the CLEO/QELS, Baltimore, Maryland, USA, May 6-11, 2007; Proceedings (2007).
  • M. Korkusinski, P. Hawrylak, A. Babinski, M. Potemski, S. Raymond, and Z. Wasilewski, "Optical readout of charge and spin in a self-assembled quantum dot in a strong magnetic field", Europhys. Lett. 79, 47005 (2007).
  • T. J. Kershaw, A. Usher, A. S. Sachrajda, J. Gupta, Z. R. Wasilewski, M. Elliott, D. A. Ritchie, and M. Y. Simmons, "Decay of long-lived quantum Hall induced currents in 2D electron systems", New J. Phys. 9, 71-71 (2007).
  • B. Aslan, D. J. Lockwood, Z. R. Wasilewski, and H. C. Liu, "Electronic Raman scattering from holes in InAs/GaAs self-assembled quantum dots", Electron. Lett. 43, 1162-1163 (2007).

1980-2006

  • M. Pioro-Ladriere, A. Usher, A. S. Sachrajda, J. Lapointe, J. Gupta, Z. Wasilewski, S. Studenikin, and M. Elliott, "Influence of the long-lived quantum Hall potential on the characteristics of quantum devices", Phys. Rev. B 73, 075309-5 (2006).
  • M. Pioro-Ladriere, A. Usher, A. S. Sachrajda, M. Elliott, J. Lapointe, J. Gupta, Z. R. Wasilewski, and S. Studenikin, "Hysteretic effects in lateral nanostructures caused by long-lived quantum-Hall eddy currents", Physica E 34, 476-479 (2006).
  • H. Luo, H. C. Liu, C. Y. Song, Z. R. Wasilewski, and A. J. SpringThorpe, "Terahertz Quantum Well Photodetectors", presented at the SPIE Optics & Photonics Conference, San Diego, CA, USA, Aug. 13 -17, 2006; Proceedings of SPIE (2006).
  • H. Luo, D. Ban, H. C. Liu, Z. R. Wasilewski, and M. Buchanan, "Optical upconverter with integrated heterojunction phototransistor and light-emitting diode", Appl. Phys. Lett. 88, 073501-3 (2006).
  • A. R. Long, M. Pioro-Ladriere, J. H. Davies, A. S. Sachrajda, L. Gaudreau, P. Zawadzki, J. Lapointe, J. Gupta, Z. Wasilewski, and S. A. Studenikin, "The origin of switching noise in GaAs/AlGaAs lateral gated devices", Physica E 34, 553-556 (2006).
  • H. C. Liu, H. Luo, C. Y. Song, Z. R. Wasilewski, A. J. SpringThorpe, and J. C. Cao, "Design of terahertz quantum well photodetectors", Infrared Physics and Technology, xx (2006).
  • H. C. Liu, H. Luo, D. Ban, M. Wachter, C. Y. Song, Z. R. Wasilewski, M. Buchanan, G. C. Aers, A. J. SpringThorpe, J. C. Cao, S. L. Feng, B. S. Williams, and Q. Hu, "Terahertz Semiconductor Quantum Well Devices", Chinese J. Semicond. 27, 627-634 (2006).
  • H. C. Liu, H. Luo, D. Ban, M. Wachter, C. Y. Song, Z. R. Wasilewski, M. Buchanan, G. C. Aers, A. J. SpringThorpe, J. C. Cao, S. L. Feng, B. S. Williams, and Q. Hu, "THz quantum semiconductor devices", presented at the ICO20: Materials and Nanostructures Symposium; Proceedings (SPIE, 2006), Vol. 6029, p. 1-10.
  • H. C. Liu, H. Luo, D. Ban, M. Buchanan, Z. R. Wasilewski, A. J. S. Thorpe, and P. J. Poole, "Photon upconversion devices", presented at the Infrared Technology and Applications XXXII, Orlando (Kissimmee), FL, USA,  (SPIE, 2006), Vol. 6206, p. 620603-12.
  • H. C. Liu, D. Goodchild, M. Byloos, M. Buchanan, Z. R. Wasilewski, J. A. Gupta, A. J. SpringThorpe, and G. C. Aers, "Designs of broadband quantum-well infrared photodetectors and 8 – 12 µm test device results", presented at the International Workshop on Quantum Well Infrared Photodetectors, QWIP2006, Kandy,  Sri Lanka, June 18-24, 2006; Proceedings (2006).
  • Q. Hu, B. S. Williams, S. Kumar, A. W. M. Lee, Q. Qin, J. L. Reno, H. C. Liu, and Z. R. Wasilewski, in Future Trends in Microelectronics: Up the Nano Creek (Wiley-Blackwell, Crete, Greece, 2006).
  • J. A. Gupta, G. I. Sproule, X. Wu, and Z. R. Wasilewski, "Molecular beam epitaxy growth of GaInNAs(Sb) double quantum wells with bright and narrow photoluminescence", J. Cryst. Growth 291, 86-93 (2006).
  • E. Dupont, Z. R. Wasilewski, and H. C. Liu, "Terahertz Emission in Asymmetric Quantum Wells by Frequency Mixing of Midinfrared Waves", IEEE J. Qunatum Electron. 42, 1157-1174 (2006).
  • W. Desrat, D. K. Maude, Z. R. Wasilewski, R. Airey, and G. Hill, "Dresselhaus spin-orbit coupling in a symmetric (100) GaAs quantum well", Phys. Rev. B 74, 193317-4 (2006).
  • D. Ban, M. Wachter, H. C. Liu, Z. R. Wasilewski, M. Buchanan, and G. C. Aers, "Terahertz quantum cascade lasers: Fabrication, characterization, and doping effect", J. Vac. Sci. Technol. A 24, 778-782 (2006).
  • A. Babinski, M. Potemski, S. Raymond, J. Lapointe, and Z. R. Wasilewski, "Emission from a highly excited single InAs-GaAs quantum dot in magnetic fields: An excitonic Fock-Darwin diagram", Phys. Rev. B 74, 155301-5 (2006).
  • A. Babinski, M. Potemski, S. Raymond, J. Lapointe, and Z. R. Wasilewski, "Fock-Darwin spectrum of a single InAs/GaAs quantum dot", phys. status solidi (c) 3, 3748-3751 (2006).
  • A. Babinski, M. Potemski, S. Raymond, M. Korkusinski, W. Sheng, P. Hawrylak, and Z. Wasilewski, "Optical spectroscopy of a single InAs/GaAs quantum dot in high magnetic fields", Physica E 34, 288-291 (2006).
  • A. Babinski, G. Ortner, S. Raymond, M. Potemski, M. Bayer, W. Sheng, P. Hawrylak, Z. Wasilewski, S. Fafard, and A. Forchel, "Ground-state emission from a single InAs/GaAs self-assembled quantum dot structure in ultrahigh magnetic fields", Phys. Rev. B 74, 075310-6 (2006).
  • B. Aslan, H. C. Liu, J. A. Gupta, Z. R. Wasilewski, G. C. Aers, S. Raymond, and M. Buchanan, "Observation of resonant tunneling through a self-assembled InAs quantum dot layer", J. Vac. Sci. Technol. A 24, 704-707 (2006).
  • B. Aslan, H. C. Liu, J. A. Gupta, Z. R. Wasilewski, G. C. Aers, S. Raymond, and M. Buchanan, "Observation of resonant tunneling through a self-assembled InAs quantum dot layer", Appl. Phys. Lett. 88, 043103-3 (2006).
  • S. M. Ulrich, M. Benyoucef, P. Michler, J. Wiersig, N. Baer, P. Gartner, F. Jahnke, M. Schwab, H. Kurtze, R. Oulton, M. Bayer, S. Fafard, Z. Wasilewski, and A. Forchel, "Single-photon and photon pair emission from individual (In,Ga)As quantum dots", presented at the 27th International Conference on the Physics of Semiconductors. ICPS-27, Flagstaff, AZ, USA, 26-30 July 2004; AIP Conference Proceedings (2005), Vol. (772) pt. 1, p. 661-4.
  • S. M. Ulrich, M. Benyoucef, P. Michler, N. Baer, P. Gartner, F. Jahnke, M. Schwab, H. Kurtze, M. Bayer, S. Fafard, Z. R. Wasilewski, and A. Forchel, "Correlated photon-pair emission from a charged single quantum dot", Phys. Rev. B 71, 235328 (2005).
  • H. D. Sun, S. Calvez, M. D. Dawson, J. A. Gupta, G. I. Sproule, X. Wu, and Z. R. Wasilewski, "Role of Sb in the growth and optical properties of 1.55 mu m GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy", Appl. Phys. Lett. 87, 181908-3 (2005).
  • C. Skierbiszewski, Z. R. Wasilewski, M. Siekacz, A. Feduniewicz, P. Perlin, P. Wisniewski, J. Borysiuk, I. Grzegory, M. Leszczynski, T. Suski, and S. Porowski, "Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy", Appl. Phys. Lett. 86, 011114 (2005).
  • C. Skierbiszewski, P. Perlin, I. Grzegory, Z. R. Wasilewski, M. Siekacz, A. Feduniewicz, P. Wisniewski, J. Borysiuk, P. Prystawko, G. Kamler, T. Suski, and S. Porowski, "High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy", Semicond. Sci. Technol. 20, 809 (2005).
  • C. Skierbiszewski, K. Dybko, W. Knap, M. Siekacz, W. Krupczynski, G. Nowak, M. Bockowski, J. Lusakowski, Z. R. Wasilewski, D. Maude, T. Suski, and S. Porowski, "High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy", Appl. Phys. Lett. 86, 102106 (2005).
  • A. S. Sachrajda, M. Pioro-Ladriere, M. Ciorga, S. Studenikin, P. Zawadzki, P. Hawrylak, J. Lapointe, Z. R. Wasilewski, and J. A. Gupta, "Charge redistribution spectroscopy as a probe of spin phenomena in quantum dots", presented at the 27th International Conference on the Physics of Semiconductors. ICPS-27, Flagstaff, AZ, USA, 26-30 July 2004; AIP Conference Proceedings (2005), Vol. (772) pt. 2, p. 1303-6.
  • M. B. M. Rinzan, A. G. U. Perera, S. G. Matsik, H. C. Liu, Z. R. Wasilewski, and M. Buchanan, "AlGaAs emitter/GaAs barrier terahertz detector with a 2.3 THz threshold", Appl. Phys. Lett. 86, 071112 (2005).
  • B. A. Piot, D. K. Maude, M. Henini, Z. R. Wasilewski, K. J. Friedland, R. Hey, K. H. Ploog, A. I. Toropov, R. Airey, and G. Hill, "Quantum Hall ferromagnet at high filling factors: A magnetic-field-induced Stoner transition", Phys. Rev. B 72, 245325-11 (2005).
  • M. Pioro-Ladriere, J. H. Davies, A. R. Long, A. S. Sachrajda, L. Gaudreau, P. Zawadzki, J. Lapointe, J. Gupta, Z. R. Wasilewski, and S. Studenikin, "Origin of switching noise in GaAs/AlxGa1-xAs lateral gated devices", Phys. Rev. B 72, 115331 (2005).
  • G. Ortner, I. Yugova, G. B. H. von Hogersthal, A. Larionov, H. Kurtze, D. R. Yakovlev, M. Bayer, S. Fafard, Z. R. Wasilewski, P. Hawrylak, Y. B. Lyanda-Geller, T. L. Reinecke, A. Babinski, M. Potemski, V. B. Timofeev, and A. Forchel, "Fine structure in the excitonic emission of InAs/GaAs quantum dot molecules", Phys. Rev. B 71, 125335-30 (2005).
  • G. Ortner, I. Yugova, A. Larionov, G. Baldassarri H.v.H, M. Bayer, P. Hawrylak, S. Fafard, and Z. R. Wasilewski, "Experimental demonstration of coherent coupling of two quantum dots", Physica E 26, 281 (2005).
  • G. Ortner, M. Schwab, M. Bayer, R. Passler, S. Fafard, Z. R. Wasilewski, P. Hawrylak, and A. Forchel, "Temperature dependence of the excitonic band gap in InxGa1-xAs/GaAs self-assembled quantum dots", Phys. Rev. B 72, 085328 (2005).
  • G. Ortner, R. Oulton, H. Kurtze, M. Schwab, D. R. Yakovlev, M. Bayer, S. Fafard, Z. R. Wasilewski, and P. Hawrylak, "Energy relaxation of electrons in InAs/GaAs quantum dot molecules", Phys. Rev. B 72, 165353-6 (2005).
  • H. Luo, H. C. Liu, C. Y. Song, and Z. R. Wasilewski, "Background-limited terahertz quantum-well photodetector", Appl. Phys. Lett. 86, 231103 (2005).
  • H. C. Liu, M. Wachter, D. Ban, Z. R. Wasilewski, M. Buchanan, G. C. Aers, J. C. Cao, S. L. Feng, B. S. Williams, and Q. Hu, "Effect of doping concentration on the performance of terahertz quantum-cascade lasers", Appl. Phys. Lett. 87, 141102-3 (2005).
  • H. C. Liu, H. Luo, C. Y. Song, Z. R. Wasilewski, and A. J. SpringThorpe, "Terahertz quantum well photodetectors", presented at the Infrared to Terahertz Technologies for Health and the Environment Symposium, Boston, MA, USA; Proceedings (SPIE, 2005), Vol. 6010, p. 5-7.
  • W. Langbein, P. Borri, U. Woggon, M. Schwab, M. Bayer, S. Fafard, Z. R. Wasilewski, P. Hawrylak, V. Stavarache, D. Reuter, and A. D. Wieck, "Coherent dynamics in InGaAs quantum dots and quantum dot molecules", Physica E 26, 400 (2005).
  • M. Korkusinski, W. Sheng, P. Hawrylak, Z. Wasilewski, G. Ortner, M. Bayer, A. Babinski, and M. Potemski, "Electron and hole states in vertically coupled self-assembled InGaAs quantum dots", presented at the 27th International Conference on the Physics of Semiconductors. ICPS-27, Flagstaff, AZ, USA, 26-30 July 2004; AIP Conference Proceedings (2005), Vol. (772) pt. 1, p. 685-6.
  • R. Fletcher, M. Tsaousidou, T. Smith, P. T. Coleridge, Z. R. Wasilewski, and Y. Feng, "Individual band mobilities in a double quantum well", presented at the 27th International Conference on the Physics of Semiconductors. ICPS-27. , Flagstaff, AZ, USA, 26-30 July 2004; AIP Conference Proceedings (2005), Vol. (772) pt. 2, p. 1009-10.
  • R. Fletcher, M. Tsaousidou, T. Smith, P. T. Coleridge, Z. R. Wasilewski, and Y. Feng, "Two-band electron transport in a double quantum well", Phys. Rev. B 71, 155310 (2005).
  • A. Feduniewicz, C. Skierbiszewski, M. Siekacz, Z. R. Wasilewski, I. Sproule, S. Grzanka, R. Jakiela, J. Borysiuk, G. Kamler, and E. Litwin-Staszewska, "Control of Mg doping of GaN in RF-plasma molecular beam epitaxy", J. Cryst. Growth 278, 443 (2005).
  • E. Dupont, Z. R. Wasilewski, and H. C. Liu, "Room temperature and widely tunable THz and sub-THz difference frequency generation by intersubband transitions in asymmetric quantum wells", presented at the 27th International Conference on the Physics of Semiconductors. ICPS-27. , Flagstaff, AZ, USA, 26-30 July 2004; AIP Conference Proceedings (2005), Vol. 2.
  • A. Bercha, F. Dybała, K. Komorowska, P. Adamiec, R. Bohdan, W. Trzeciakowski, J. A. Gupta, P. J. Barrios, G. Pakulski, A. Delage, and Z. R. Wasilewski, "Pressure tuning of GaInNAs laser diodes in external cavity", presented at the Photonics West; Proceedings (SPIE, 2005), Vol. 5722, p. 565.
  • C. Bardot, M. Schwab, M. Bayer, S. Fafard, Z. R. Wasilewski, and P. Hawrylak, "Exciton lifetime in InAs/GaAs quantum dot molecules", Phys. Rev. B 72, 035314-7 (2005).
  • D. Ban, H. Luo, Z. R. Wasilewski, and M. Buchanan, "Pixelless 1.5-μm Up-Conversion Imaging Device Fabricated by Wafer Fusion", IEEE Photonics Tech. Lett. 17, 1477-1479 (2005).
  • D. Ban, H. Luo, H. C. Liu, Z. R. Wasilewski, Y. Paltiel, A. Raizman, and A. Sher, "Midinfrared optical upconverter", Appl. Phys. Lett. 86, 201103 (2005).
  • D. Ban, H. Luo, H. C. Liu, Z. R. Wasilewski, M. Buchanan, Y. Paltiel, A. Raizman, and A. Sher, "Wafer-fused mid-infrared optical up-converter based on MOCVD grown InSb", presented at the Photonic Applications in Devices and Communication Systems Symposium, Toronto, Canada; Proceedings (SPIE, 2005), Vol. 5970, p. 1-8.
  • A. Babinski, S. Awirothananon, J. Lapointe, Z. R. Wasilewski, S. Raymond, and M. Potemski, "Single-dot spectroscopy in high magnetic fields", Physica E 26, 190 (2005).
  • Z. R. Wasilewski, J. M. Baribeau, M. Beaulieu, X. Wu, and G. I. Sproule, "Studies of oxide desorption from GaAs substrates via Ga2O3 to Ga2O conversion by exposure to Ga flux", J. Vac. Sci. Technol. B 22, 1534-1538 (2004).
  • S. A. Studenikin, M. Potemski, P. T. Coleridge, A. S. Sachrajda, and Z. R. Wasilewski, "Microwave radiation induced magneto-oscillations in the longitudinal and transverse resistance of a two-dimensional electron gas", Solid State Commun. 129, 341-345 (2004).
  • C. Skierbiszewski, Z. R. Wasilewski, M. Siekacz, A. Feduniewicz, B. Pastuszka, I. Grzegory, M. Leszczynski, and S. Porowski, "Growth optimisation of the GaN layers and GaN/AlGaN heterojunctions on bulk GaN substrates using plasma-assisted molecular beam epitaxy", Phys. Status Solidi A 201, 320 - 323 (2004).
  • S. Raymond, S. Studenikin, A. Sachrajda, Z. R. Wasilewski, S. J. Cheng, W. Sheng, P. Hawrylak, A. Babinski, M. Potemski, G. Ortner, and M. Bayer, "Excitonic energy shell structure of self-assembled InGaAs/GaAs quantum dots", Phys. Rev. Lett. 92, 187402 (2004).
  • B. A. Piot, D. K. Maude, Z. R. Wasilewski, K. J. Friedland, R. Hey, K. H. Ploog, L. Eaves, M. Henini, R. Airey, and G. Hill, "Further evidence for a collapse of the exchange-enhanced spin splitting in two dimensional systems", presented at the 16th Conference on High Magnetic Fields in Semiconductor Physics (SemiMag 16), Tallahassee, FL, USA, 2-6 Aug. 2004; International Journal of Modern Physics B (2004), Vol. 18, p. 3597-602.
  • G. Pakulski, J. A. Gupta, P. J. Barrios, A. Delage, D. Poitras, X. Wu, E. Post, and Z. R. Wasilewski, "Transparency current density of GaInNAs lasers", presented at the Photonics North 2004: Optical Components and Devices Symposium, Ottawa, Canada; Proceedings (SPIE, 2004), Vol. 5577, p. 82-87.
  • G. Ortner, D. R. Yakovlev, M. Bayer, S. Rudin, T. L. Reinecke, S. Fafard, Z. R. Wasilewski, and A. Forchel, "Temperature dependence of the zero-phonon linewidth in InAs/GaAs quantum dots", Phys. Rev. B 70, 201301 (2004).
  • G. Ortner, A. Larionov, I. Yugova, G. Baldassarri-HvH, M. Bayer, P. Hawrylak, S. Fafard, and Z. Wasilewski, "Experimental indications for coherent coupling of two quantum dots", presented at the International Quantum Electronics Conference. IQEC, San Francisco, CA, USA, 16-21 May 2004; Proceedings (IEEE, Piscataway, NJ, USA, 2004), p. 522-524.
  • H. Luo, D. Ban, H. C. Liu, A. J. Springthorpe, Z. R. Wasilewski, M. Buchanan, and R. Glew, "1.5 µm to 0.87 µm optical upconversion using wafer fusion technology", J. Vac. Sci. Technol. A 22, 788-791 (2004).
  • H. Luo, D. Ban, H. C. Liu, A. J. SpringThorpe, Z. R. Wasilewski, and M. Buchanan, "1.5- to 0.8-µm optical upconversion by wafer fusion", presented at the Photonics North 2004: Optical Components and Devices Symposium, Ottawa, Canada; Proceedings (SPIE, 2004), Vol. 5577, p. 16-27.
  • D. J. Lockwood and Z. R. Wasilewski, "Optical phonons in AlxGa1-xAs: Raman spectroscopy", Phys. Rev. B 70, 155202 (2004).
  • H. C. Liu, H. Luo, D. Ban, M. Buchanan, Z. R. Wasilewski, A. J. SpringThorpe, and P. J. Poole, "Photon Upconversion Devices", presented at the Conference on Optoelectronic and Microelectronic Materials and Devices, 2004 (2004), p. 177-184.
  • J. Huels, J. Weis, J. Smet, K. von Klitzing, and Z. R. Wasilewski, "Long time relaxation phenomena of a two-dimensional electron system within integer quantum Hall plateau regimes after magnetic field sweeps", Phys. Rev. B 69, 085319-6 (2004).
  • R. Fletcher, T. Smith, M. Tsaousidou, P. T. Coleridge, Z. R. Wasilewski, and Y. Feng, "Thermopower of a double quantum well in a parallel magnetic field", Phys. Rev. B 70, 155333 (2004).
  • J. J. Dubowski, X. R. Zhang, X. Xu, J. Lefebvre, and Z. R. Wasilewski, "Laser-induced bandgap engineering for multicolor detection with a GaAs/AlGaAs quantum well infrared photodetector", presented at the Photon Processing in Microelectronics and Photonics III Symposium, San Jose, Ca, USA; Proceedings (SPIE, 2004), Vol. 5339, p. 93-99.
  • J. J. Dubowski, C. Y. Song, J. Lefebvre, Z. R. Wasilewski, G. Aers, and H. C. Liu, "Laser-induced selective area tuning of GaAs/AlGaAs quantum well microstructures for two-color IR detector operation", J. Vac. Sci. Technol. A 22, 887-890 (2004).
  • M. Ciorga, M. Pioro-Ladriere, P. Zawadzki, J. Lapointe, Z. R. Wasilewski, and A. S. Sachrajda, "Coulomb and spin blockade of two few-electron quantum dots in series in the cotunneling regime", Phys. Rev. B 70, 235306 (2004).
  • S. J. Cheng, W. Sheng, P. Hawrylak, S. Raymond, S. Studenikin, A. Sachrajda, Z. R. Wasilewski, A. Babinski, M. Potemski, G. Ortner, and M. Bayer, "Electron-hole complexes in self-assembled quantum dots instrong magnetic fields", Physica E 21, 211-214 (2004).
  • P. Borri, W. W. Langbein, S. Schneider, U. Woggon, M. Schwab, M. Bayer, R. L. Sellin, D. Ouyang, D. Bimberg, S. Fafard, Z. R. Wasilewski, and P. Hawrylak, "Dephasing processes in InGaAs quantum dots and quantum-dot molecules", presented at the Quantum Dots, Nanoparticles, and Nanoclusters Symposium, San Jose, CA, USA; Proceedings (SPIE, 2004), Vol. 5361, p. 96-107.
  • P. Borri, W. Langbein, U. Woggon, M. Schwab, M. Bayer, S. Fafard, Z. Wasilewski, and P. Hawrylak, "Exciton dephasing in quantum dot molecules", presented at the International Quantum Electronics Conference. IQEC, San Francisco, CA, USA, 16-21 May 2004; Proceedings (IEEE, Piscataway, NJ, USA, 2004), p. 565-567.
  • M. Bayer, G. Ortner, I. Yugova, D. R. Yakovlev, G. Dasbach, D. Frohlich, P. Hawrylak, S. Fafard, Z. Wasilewski, T. L. Reinecke, Y. B. Lyanda-Geller, and H. Stolz, "Coupling of electron and hole spins by exchange: exciton fine structure in semiconductors", presented at the International Quantum Electronics Conference. IQEC, San Francisco, CA, USA, 16-21 May 2004; Proceedings (IEEE, Piscataway, NJ, USA, 2004), p. 780-781.
  • M. Bayer, G. Ortner, A. Larionov, D. R. Yakovlev, M. Schwab, P. Borri, W. Langbein, U. Woggon, I. Yugova, G. Högersthal, H. v. Baldassarri, Y. B. Lyanda-Geller, T. L. Reinecke, S. Fafard, Z. Wasilewski, M. Korkusinski, P. Hawrylak, A. Forchel, and J. P. Reithmaier, in Advances in Solid State Physics; Vol. 44/2004 (Springer Berlin / Heidelberg, 2004), p. 1224-1225.
  • D. Ban, H. Luo, H.-C. Liu, A. J. SpringThorpe, Z. R. Wasilewski, A. Bezinger, A. Bogdanov, and M. Buchanan, "1.5-µm optical up-conversion: wafer fusion and related issues", presented at the Infrared Spaceborne Remote Sensing XII, Denver, CO, USA; Proceedings of SPIE (SPIE, 2004), Vol. 5543, p. 47-55.
  • D. Ban, H. Luo, H. C. Liu, Z. R. Wasilewski, A. J. SpringThorpe, R. Glew, and M. Buchanan, "Optimized GaAs/AlGaAs light-emitting diodes and high efficiency wafer-fused optical up-conversion devices", J. Appl. Phys. 96, 5243 (2004).
  • A. Babinski, S. Raymond, Z. R. Wasilewski, J. Lapointe, and M. Potemski, "Localization of excitons in the wetting layer accompanying self-assembled InAs/GaAs quantum dots", Acta Phys. Pol.A 105, 547-552 (2004).
  • A. Babinski, S. AwirothanAnon, S. Raymond, S. Studenikin, P. Hawrylak, S. J. Cheng, W. Sheng, Z. R. Wasilewski, M. Potemski, and A. Sachrajda, "Photoluminescence excitation spectroscopy of InAs/GaAs quantum dots in high magnetic field", Physica E 22, 603-606 (2004).
  • G. Yu, N. L. Rowell, D. J. Lockwood, and Z. R. Wasilewski, "Infrared reflectivity of (GaAs)m/(AlAs)n superlattices", Appl. Phys. Lett. 83, 3683-3685 (2003).
  • T. Smith, M. Tsaousidou, R. Fletcher, P. T. Coleridge, Z. R. Wasilewski, and Y. Feng, "Thermopower of a double quantum well based on GaAs", Phys. Rev. B 67, 155328 (2003).
  • G. Ortner, M. Bayer, A. Larionov, V. B. Timofeev, A. Forchel, Y. B. Lyanda Geller, T. L. Reinecke, P. Hawrylak, S. Fafard, and Z. R. Wasilewski, "Fine structure of excitons in InAs/GaAs coupled quantum dots: A sensitive test of electronic coupling - art. no. 086404", Phys. Rev. Lett. 90, 086404-4 (2003).
  • S. G. Matsik, M. B. M. Rinzan, A. G. U. Perera, H. C. Liu, Z. R. Wasilewski, and M. Buchanan, "Cutoff tailorability of heterojunction terahertz detectors", Appl. Phys. Lett. 82, 139-141 (2003).
  • D. J. Lockwood and Z. R. Wasilewski, "Resonance Raman spectroscopy of Ga1-xAlxAs mediated via compositional variation", Solid State Commun. 126, 261-264 (2003).
  • H. C. Liu, C. Y. Song, Z. R. Wasilewski, A. J. SpringThorpe, J. C. Cao, C. Dharma wardana, G. C. Aers, D. J. Lockwood, and J. A. Gupta, "Coupled electron-phonon modes in optically pumped resonant intersubband lasers", Phys. Rev. Lett. 90, 077402 (2003).
  • H. C. Liu, E. Dupont, M. Byloos, M. Buchanan, C.-Y. Song, and Z. R. Wasilewski, "QWIP-LED Pixelless thermal imaging device", Int. J. High Speed Electronics and Systems 12, 891-905 (2003).
  • H. C. Liu, R. Dudek, A. Shen, E. Dupont, C.-Y. Song, Z. R. Wasilewski, and M. Buchanan, "QWIPs designed for high absorption and high operating temperature", Int. J. High Speed Electronics and Systems 12, 803-819 (2003).
  • H. C. Liu, R. Dudek, T. Oogarah, P. D. Grant, Z. R. Wasilewski, H. Schneider, S. Steinkogler, M. Walther, and P. Koidl, "Swept Away", Ieee Circuits and Devices 19, 9-16 (2003).
  • H. C. Liu, J. Y. Duboz, R. Dudek, Z. R. Wasilewski, S. Fafard, and P. Finnie, "Quantum dot infrared photodetectors", Physica E 17, 631-633 (2003).
  • J. A. Gupta, P. J. Barrios, G. C. Aers, R. L. Williams, J. Ramsey, and Z. R. Wasilewski, "Properties of 1.3 µm InGaNAs laser material grown by MBE using a N2/Ar RF plasma", Solid State Electronics 47, 399-405 (2003).
  • D. G. Esaev, S. G. Matsik, M. B. M. Rinzan, A. G. U. Perera, H. C. Liu, Z. R. Wasilewski, and M. Buchanan, "Resonant cavity enhanced GaAs/AlGaAs IR detectors", presented at the Quantum Sensing: Evolution and Revolution from Past to Future Symposium, San Jose, CA, USA; Proceedings (SPIE, 2003), Vol. 4999, p. 467-477.
  • D. G. Esaev, S. G. Matsik, M. B. M. Rinzan, A. G. U. Perera, H. C. Liu, Z. R. Wasilewski, and M. Buchanan, "Resonant cavity enhancement in GaAs/AlGaAs FIR detectors", J. Appl. Phys. 93, 1879-1883. (2003).
  • J. Y. Duboz, H. C. Liu, Z. R. Wasilewski, M. Byloss, and R. Dudek, "Tunnel current in quantum dot infrared photodetectors", J. Appl. Phys. 93, 1320-1322 (2003).
  • P. Borri, W. Langbein, U. Woggon, M. Schwab, M. Bayer, S. Fafard, Z. R. Wasilewski, and P. Hawrylak, "Exciton dephasing in quantum dot molecules", Phys. Rev. Lett. 91, 267401 (2003).
  • D. Ban, H. Luo, H. C. Liu, A. J. SpringThorpe, R. Glew, Z. R. Wasilewski, and M. Buchanan, "1.5 to 0.87 µm optical upconversion device fabricated by wafer fusion", Electron. Lett. 39, 1145-1147 (2003).
  • J. N. Wang, G. Q. Hai, J. M. Dai, H. T. He, X. G. Liang, Y. Q. Wang, W. K. Ge, H. C. Liu, and Z. R. Wasilewski, "The current-voltage characteristics of weakly coupled delta -doped GaAs/AlxGa1-xAs superlattices", presented at the Conference on Optoelectronic and Microelectron Materials and Devices, Sydney, NSW, Australia, 11-13 Dec. 2002; Proceedings (IEEE, Piscataway, NJ, USA, 2002), p. 467-9.
  • J. Urdanivia, F. Iikawa, M. Z. Maialle, J. A. Brum, P. Hawrylak, and Z. R. Wasilewski, "Quenching of the exciton-spin relaxation via exchange interaction in GaAs/Al/sub x/Ga/sub 1-x/As quantum wells", Phys. Rev. B 65, 115336 (2002).
  • B. J. Riel, K. Hinzer, S. Moisa, J. Fraser, P. Finnie, P. Piercy, S. Fafard, and Z. R. Wasilewski, "InAs/GaAs(100) self-assembled quantum dots: Arsenic pressure and capping effects", J. Cryst. Growth 236, 145-154 (2002).
  • T. Oogarah, H. C. Liu, E. Dupont, Z. R. Wasilewski, M. Byloos, and M. Buchanan, "High absorption GaAs/AlGaAs quantum well infrared photodetectors", Semicond. Sci. Technol. 17, L41-L43 (2002).
  • D. J. Lockwood, R. Radomski, and Z. R. Wasilewski, "Raman study of phonons in Ga1-xAlxAs", J. Raman Spectroscopy 33, 202-206 (2002).
  • H. C. Liu, T. Oogarah, E. Dupont, Z. R. Wasilewski, M. Byloos, M. Buchanan, F. Szmulowicz, J. Ehret, and G. J. Brown, "p-type quantum well infrared photodetectors covering wide spectrum", Electron. Lett. 38, 909-911 (2002).
  • H. C. Liu, S. Fafard, R. Dudek, and Z. R. Wasilewski, "Quantum dot infrared photodetector", presented at the Physics and Simulation of Optoelectronic Devices X Symposium, San Jose, CA, USA; Proceedings (SPIE, 2002), Vol. 4646, p. 94-99.
  • H. C. Liu, E. Dupont, M. Byloos, M. Buchanan, C. Song, and Z. R. Wasilewski, "QWIP-LED pixelless imaging", presented at the Photodetector Materials and Devices VII, San Jose, CA, USA,  (SPIE, 2002), Vol. 4650, p. 150-157.
  • M. Korkusinski, P. Hawrylak, M. Bayer, G. Ortner, A. Forchel, S. Fafard, and Z. R. Wasilewski, "Entangled states of electron-hole complex in a single InAs/GaAs coupled quantum dot molecule", Physica E 13, 610-615 (2002).
  • R. J. Hussey, R. Driad, G. I. Sproule, S. Moisa, J. W. Fraser, Z. R. Wasilewski, J. P. McCaffrey, D. Landheer, and M. J. Graham, "Thermal oxidation of III-V materials and heterostructures", J. Electrochem. Soc. 149, G581-G584 (2002).
  • J. A. Gupta, Z. R. Wasilewski, B. J. Riel, J. Ramsey, G. C. Aers, R. L. Williams, G. I. Sproule, A. Perovic, D. D. Perovic, T. Garanzotis, and A. J. SpringThorpe, "Compositional control in molecular beam epitaxy growth of GaNyAs1-y on GaAs (001) using an Ar/N-2 RF plasma", J. Cryst. Growth 242, 141-154 (2002).
  • R. Fletcher, M. Tsaousidou, P. T. Coleridge, Y. Feng, and Z. R. Wasilewski, "Electron-phonon coupling and phonon-drag thermopower of a very low mobility 2DEG", Physica E 12, 478-481 (2002).
  • P. Finnie, B. J. Riel, and Z. R. Wasilewski, "Reflection high-energy electron diffraction observation of the dynamics of semiconductor quantum dot formation and decay", J. Vac. Sci. Technol. B 20, 2210-2213 (2002).
  • E. Dupont, M. Byloos, M. Gao, M. Buchanan, C. Y. Song, Z. R. Wasilewski, and H. C. Liu, "Pixelless thermal Imaging with integrated quantum-well infrared photodetector and light-emitting diode", IEEE Photonics Tech. Lett. 14, 182-184 (2002).
  • J. Y. Duboz, J. A. Gupta, Z. R. Wasilewski, J. Ramsey, R. L. Williams, G. C. Aers, B. J. Riel, and G. I. Sproule, "Band-gap energy of InxGa1-xNyAs1-y as a function of N content", Phys. Rev. B 66, 085313 (2002).
  • J. Y. Duboz, J. A. Gupta, M. Byloss, G. C. Aers, H. C. Liu, and Z. R. Wasilewski, "Intersubband transitions in InGaNAs/GaAs quantum wells", Appl. Phys. Lett. 81, 1836-1838 (2002).
  • W. Desrat, D. K. Maude, M. Potemski, J. C. Portal, Z. R. Wasilewski, and G. Hill, "Resistively detected NMR in the quantum Hall regime", Physica E 12, 149-151 (2002).
  • W. Desrat, D. K. Maude, M. Potemski, J. C. Portal, Z. R. Wasilewski, and G. Hill, "Resistively detected nuclear magnetic resonance in the quantum Hall regime: Possible evidence for a Skyrme crystal", Phys. Rev. Lett. 88, 256807-1 (2002).
  • M. Bayer, G. Ortner, A. Larionov, V. Timofeev, A. Forchel, P. Hawrylak, K. Hinzer, M. Korkusinski, S. Fafard, and Z. R. Wasilewski, "Entangled exciton states in quantum dot molecules", Physica E 12, 900-903 (2002).
  • M. Bayer, G. Ortner, A. Larionov, A. Kress, A. W. B. Forchel, P. Hawrylak, K. Hinzer, M. Korkusinski, S. Fafard, Z. R. Wasilewski, T. L. Reinecke, and Y. Lyanda-Geller, "Entangled exciton states in quantum dot molecules", presented at the 10th International Symposium on Nanostructures: Physics and Technology; Proceedings (SPIE, 2002), Vol. 5023, p. 522-525.
  • B. Aslan, H. C. Liu, M. Buchanan, and Z. R. Wasilewski, "Erratum: ``Short wavelength (1--4  mu m) infrared detectors using intersubband transitions in GaAs-based quantum wells'' [J. Appl. Phys. [bold 83], 6178 (1998)]", J. Appl. Phys. 91, 10230 (2002).
  • F. Szmulowicz, G. J. Brown, H. C. Liu, A. Shen, Z. R. Wasilewski, and M. Buchanan, "GaAs/AlGaAs p-type multiple quantum wells for infrared detection at normal incidence: model and experiment", presented at the International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, Zakopane, Poland; Proceedings (SPIE, 2001), Vol. 4413, p. 293-306.
  • A. G. U. Perera, S. G. Matsik, B. Yaldiz, H. C. Liu, A. Shen, M. Gao, Z. R. Wasilewski, and M. Buchanan, "Heterojunction wavelength-tailorable far-infrared photodetectors with response out to 70 mu m", Appl. Phys. Lett. 78, 2241-2243 (2001).
  • A. G. U. Perera, S. G. Matsik, V. Y. Letov, H. C. Liu, A. Shen, M. Gao, Z. R. Wasilewski, M. Buchanan, and S. J. Rolfe, "Heterojunction interfacial workfunction detectors for far-infrared applications", presented at the Photodetectors: Materials and Devices VI Symposium, San Jose, CA, USA; Proceedings (SPIE, 2001), Vol. 4288, p. 371-378.
  • J. P. McCaffrey, M. D. Robertson, P. Poole, Z. R. Wasilewski, B. Riel, R. Williams, and S. Fafard, "Structural characterization of InAs/GaAs and InAs/InP quantum dots by transmission electron microscopy", presented at the Semiconductor Quantum Dots II. Symposium. , Boston, MA, USA, 27-30 Nov. 2000; Materials Research Society Symposium Proceeding (MRS, 2001), Vol. 642, p. J8.5.1-10.
  • D. K. Maude, L. B. Rigal, W. Desrat, M. Potemski, J. C. Portal, L. Eaves, Z. R. Wasilewski, A. I. Toropov, and G. Hill, "Breakdown of the quantum Hall effect", Acta Phys. Pol.A 100, 213-226 (2001).
  • H. C. Liu, C. Y. Song, A. Shen, M. Gao, E. Dupont, P. J. Poole, Z. R. Wasilewski, M. Buchanan, P. H. Wilson, B. J. Robinson, D. A. Thompson, Y. Ohno, and H. Ohno, "Dual-band photodetectors based on interband and intersubband transitions", Infrared Phys. Tech. 42, 163-170 (2001).
  • H. C. Liu, C. Song, A. Shen, R. Dudek, M. Gao, E. Dupont, Z. R. Wasilewski, M. Buchanan, P. H. Wilson, B. J. Robinson, D. A. Thompson, G. J. Brown, F. Szmulowicz, and J. E. Ehret, "Quantum well infrared detection devices", presented at the Photodetectors: Materials and Devices VI Symposium, San Jose, CA, USA, 22-24 Jan. 2001; Proceedings (SPIE, 2001), Vol. 4288, p. 130-140.
  • H. C. Liu, M. Gao, J. McCaffrey, Z. R. Wasilewski, and S. Fafard, "Quantum dot infrared photodetectors", Appl. Phys. Lett. 78, 79-81 (2001).
  • H. C. Liu, R. Dudek, A. Shen, E. Dupont, C. Y. Song, Z. R. Wasilewski, and M. Buchanan, "High absorption (> 90%) quantum-well infrared photodetectors", Appl. Phys. Lett. 79, 4237-4239 (2001).
  • H. C. Liu, R. Dudek, A. Shen, E. Dupont, C. Song, Z. R. Wasilewski, and M. Buchanan, "QWIPs beyond FPAs: high-speed room-temperature detectors", presented at the Infrared Technology and Applications XXVII Symposium, Orlando, FL, USA; Proceedings (SPIE, 2001), Vol. 4369, p. 489-497.
  • H. C. Liu, I. W. Cheung, A. J. SpringThorpe, C. Dharma wardana, Z. R. Wasilewski, D. J. Lockwood, and G. C. Aers, "Intersubband Raman Laser", Appl. Phys. Lett. 78, 3580-3582 (2001).
  • V. Letov, A. G. U. Perera, M. Ershov, H. C. Liu, M. Buchanan, and Z. R. Wasilewski, "Experimental observation of transient photocurrent overshoot in quantum well infrared photodetectors", Infrared Phys. Tech. 42, 243-247 (2001).
  • V. Letov, M. Ershov, S. G. Matsik, A. G. U. Perera, H. C. Liu, Z. R. Wasilewski, and M. Buchanan, "Transient photocurrent overshoot in quantum-well infrared photodetectors", Appl. Phys. Lett. 79, 2094-2096 (2001).
  • K. Hinzer, M. Bayer, J. P. McCaffrey, P. Hawrylak, M. Korkusinski, O. Stern, Z. R. Wasilewski, S. Fafard, and A. Forchel, "Optical spectroscopy of electronic states in a single pair of vertically coupled self-assembled quantum dots", Phys. Status Solidi B 224, 385-392 (2001).
  • M. Ershov, B. Yaldiz, A. G. U. Perera, S. G. Matsik, H. C. Liu, M. Buchanan, Z. R. Wasilewski, and M. D. Williams, "Space charge spectroscopy of integrated quantum well infrared photodetector-light emitting diode", Infrared Phys. Tech. 42, 259-265 (2001).
  • E. Dupont, M. Gao, Z. R. Wasilewski, and H. C. Liu, "Integration of n-type and p-type quantum-well infrared photodetectors for sequential multicolor operation", Appl. Phys. Lett. 78, 2067-2069 (2001).
  • E. Dupont, M. Gao, M. Buchanan, Z. R. Wasilewski, and H. C. Liu, "Optimization of p-doping in GaAs photon-recycling light-emitting diodes operated at low temperature", Semicond. Sci. Technol. 16, L21-L23 (2001).
  • E. Dupont, M. Buchanan, M. Byloos, M. Gao, C. Y. Song, Z. R. Wasilewski, and H. C. Liu, "Infrared thermal imaging without pixellation", presented at the Conference on Lasers and Electro-Optics, 2001. ,  (2001), p. CPD29-CP1-2.
  • M. Ciorga, A. S. Sachrajda, P. Hawrylak, C. Gould, P. Zawadzki, Y. Feng, and Z. R. Wasilewski, "Readout of a single electron spin based quantum bit by current detection", Physica E 11, 35-40 (2001).
  • M. Bayer, O. Stern, A. Forchel, P. Hawrylak, S. Fafard, K. Hinzer, G. Narvaez, and Z. R. Wasilewski, "Exciton complexes in self-assembled quantum dots", presented at the Semiconductor Quantum Dots Symposium, Boston, MA, USA, 27-30 Nov. 2000; Materials Research Society Symposium Proceeding (MRS, 2001), Vol. 642, p. J5.1.1-12.
  • M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z. R. Wasilewski, O. Stern, and A. Forchel, "Coupling and entangling of quantum states in quantum dot molecules", Science 291, 451-453 (2001).
  • C. N. Allen, P. Finnie, S. Raymond, Z. R. Wasilewski, and S. Fafard, "Inhomogeneous broadening in quantum dots with ternary aluminum alloys", Appl. Phys. Lett. 79, 2701-2703 (2001).
  • I. V. Zozoulenko, A. S. Sachrajda, C. Gould, K.-F. Berggren, P. Zawadzki, Y. Feng, and Z. R. Wasilewski, "Magnetoconductance of a few-electron open quantum dot", Physica E 6, 409-413 (2000).
  • J. Urdanivia, F. Iikawa, J. A. Brum, M. Z. Maialle, P. Hawrylak, and Z. R. Wasilewski, "Screening effects on the spin splitting in n-doped GaAs/AlGaAs quantum wells", Physica E 6, 813-816 (2000).
  • F. Szmulowicz, A. Shen, H. C. Liu, G. J. Brown, Z. R. Wasilewski, and M. Buchanan, "Temperature dependence of photoresponse in p-type GaAs/AlxGa1-xAs multiple quantum wells: Theory and experiment", Phys. Rev. B 61, 13798-13804 (2000).
  • L. B. Rigal, D. K. Maude, M. Potemski, J. C. Portal, L. Eaves, Z. R. Wasilewski, G. Hill, M. A. Pate, and A. I. Toropov, "A phase diagram for the breakdown of the odd integer quantum Hall effect", Physica E 6, 124-127 (2000).
  • P. G. Piva, R. D. Goldberg, I. V. Mitchell, D. Labrie, R. Leon, S. Charbonneau, Z. R. Wasilewski, and S. Fafard, "Enhanced degradation resistance of quantum dot lasers to radiation damage", Appl. Phys. Lett. 77, 624-626 (2000).
  • A. G. U. Perera, S. G. Matsik, M. Ershov, Y. W. Yi, H. C. Liu, M. Buchanan, and Z. R. Wasilewski, "Effects of traps on the dark current transients in GaAs/AlGaAs quantum-well infrared photodetectors", Physica E 7, 130-134 (2000).
  • J. P. McCaffrey, M. D. Robertson, S. Fafard, Z. R. Wasilewski, E. M. Griswold, and L. D. Madsen, "Determination of the size, shape, and composition of indium-flushed self-assembled quantum dots by transmission electron microscopy", J. Appl. Phys. 88, 2272-2277 (2000).
  • H. C. Liu, C. Y. Song, A. Shen, M. Gao, Z. R. Wasilewski, and M. Buchanan, "GaAs/AlGaAs quantum-well photodetector for visible and middle infrared dual-band detection", Appl. Phys. Lett. 77, 2437-2439 (2000).
  • P. Kolev, M. J. Deen, H. C. Liu, J. M. Li, M. Buchanan, and Z. R. Wasilewski, "Asymmetry in the dark current low frequency noise characteristics of B-B and B-C quantum well infrared photodetectors from 10 to 80 K", J. Appl. Phys. 87, 2400-2407 (2000).
  • K. Hinzer, C. N. Allen, J. Lapointe, D. Picard, Z. R. Wasilewski, S. Fafard, and A. J. S. Thorpe, "Widely tunable self-assembled quantum dot lasers", J. Vac. Sci. Technol. A 18, 578-581 (2000).
  • C. Gould, P. Hawrylak, A. Sachrajda, Y. Feng, P. Zawadzki, and Z. R. Wasilewski, "Correlations effects in few-electron quantum dots between [nu]=2 and 1", Physica E 6, 461-465 (2000).
  • S. Fafard, M. Spanner, J. P. McCaffrey, and Z. R. Wasilewski, "Coupled InAs/GaAs quantum dots with well-defined electronic shells", Appl. Phys. Lett. 76, 2268-2270 (2000).
  • S. Fafard, H. C. Liu, Z. R. Wasilewski, J. P. McCaffrey, M. Spanner, S. Raymond, C. N. Allen, K. Hinzer, J. Lapointe, C. Struby, M. Gao, P. Hawrylak, C. Gould, A. Sachrajda, and P. Zawadzki, "Quantum dot devices", presented at the Optoelectronic Materials and Devices II Symposium, Taipei, Taiwan; Proceedings (SPIE, 2000), Vol. 4078, p. 100-114.
  • S. Fafard, C. N. Allen, J. P. McCaffrey, P. Finnie, J. Fraser, and Z. R. Wasilewski, "Optical memory effects in near-surface InAs/GaAs quantum dots having sharp electronic shells", presented at the IEEE International Symposium on Compound Semiconductors, 2000 (2000), p. 297-302.
  • S. Fafard, C. N. Allen, K. Hinzer, and Z. R. Wasilewski, "Quantum dot laser diodes", presented at the Trends in Optics and Photonics. Advanced Semiconductor Lasers and their Applications Symposium, Santa Barbara, CA, USA, 21-23 July 1999; Proceedings (Opt. Soc. America, Washington, DC, USA, 2000), Vol. 31, p. 175-7.
  • E. Dupont, H. C. Liu, M. Buchanan, M. Gao, C. Y. Song, A. Shen, Z. R. Wasilewski, S. Chiu, X. Zhu, and P. B. Corkurn, "Pixelless imaging by transmissive quantum-well infrared photodetectors integrated with light emitting diodes", presented at the Conference on Lasers and Electro-Optics, 2000. (CLEO 2000). ,  (2000), p. 350-351.
  • E. Dupont, M. Gao, H. C. Liu, Z. R. Wasilewski, A. Shen, M. Zaluzny, S. R. Schmidt, and A. Seilmeier, "Grazing-angle intersubband absorption in n-doped GaAs multiple quantum wells", Phys. Rev. B 61, 13050-13054 (2000).
  • W. Desrat, D. K. Maude, L. B. Rigal, M. Potemski, J. C. Portal, L. Eaves, M. Henini, Z. R. Wasilewski, A. Toropov, G. Hill, and M. A. Pate, "Low-frequency impedance of quantized Hall conductors", Phys. Rev. B 62, 12990-12996 (2000).
  • M. Ciorga, A. S. Sachrajda, P. Hawrylak, C. Gould, P. Zawadzki, S. Jullian, Y. Feng, and Z. R. Wasilewski, "Addition spectrum of a lateral dot from Coulomb and spin-blockade spectroscopy", Phys. Rev. B 61, R16315-R16318 (2000).
  • S. Charlebois, J. Beerens, R. Cote, E. Lavallee, J. Beauvais, and Z. R. Wasilewski, "Temperature dependence of the resistance resonance in weakly coupled quantum wells", Physica E 6, 645-649 (2000).
  • J. P. Bouchard, M. Tetu, S. Janz, D. X. Xu, Z. R. Wasilewski, P. Piva, U. G. Akano, and I. V. Mitchell, "Quasi-phase matched second-harmonic generation in an AlxGa1-xAs asymmetric quantum-well waveguide using ion-implantation-enhanced intermixing", Appl. Phys. Lett. 77, 4247-4249 (2000).
  • J. P. Bouchard, M. Tetu, S. Janz, D. X. Xu, Z. R. Wasilewski, U. G. Akano, I. V. Mitchell, and P. G. Piva, "Quasi-phase-matching in an asymmetric quantum well waveguide using ion implantation induced intermixing", presented at the Conference on Lasers and Electro Optics.CLEO 2000 San Francisco, CA, USA, 7-12 May 2000; Technical Digest Series (Opt. Soc. America, Salem, MA, USA, 2000), Vol. 39, p. 71-2.
  • J. P. Bouchard, S. Janz, D.-X. Xu, Z. R. Wasilewski, U. G. Akano, I. V. Mitchell, P. G. Piva, and M. Tetu, "Quasi-phase-matching using quantum-well-intermixing-induced modulation of the nonlinear susceptibility of asymmetric quantum wells", presented at the Applications of Photonic Technology 4 Symposium, Quebec City, Canada; Proceedings (SPIE, 2000), Vol. 4087, p. 597-606.
  • I. V. Zozoulenko, A. S. Sachrajda, C. Gould, K. F. Berggren, P. Zawadzki, Y. Feng, and Z. R. Wasilewski, "Few-electron open dots: Single level transport", Phys. Rev. Lett. 83, 1838-1841 (1999).
  • Z. R. Wasilewski, S. Fafard, and J. P. McCaffrey, "Size and shape engineering of vertically stacked self-assembled quantum dots", J. Cryst. Growth 201-202, 1131-1135 (1999).
  • P. Schmuki, R. J. Hussey, G. i. Sproule, Y. Tao, Z. R. Wasilewski, J. P. McCaffrey, and M. J. Graham, "Nature and growth of anodic and thermal oxides on GaAs and AlxGa1-x As", Corrosion Science 41, 1467-1474 (1999).
  • A. S. Sachrajda, C. Gould, P. Hawrylak, Y. Feng, P. Zawadzki, and Z. R. Wasilewski, "Spin depolarization in quantum dots", Brazilian Journal of Physics 29, 639-642 (1999).
  • A. S. Sachrajda, C. Gould, P. Hawrylak, Y. Feng, and Z. R. Wasilewski, "A lateral few electron dot", Physica Scripta T79, 16-19 (1999).
  • L. B. Rigal, D. K. Maude, M. Potemski, J. C. Portal, L. Eaves, Z. R. Wasilewski, G. Hill, and M. A. Pate, "Phase diagram for the breakdown of the quantum Hall effect", Phys. Rev. Lett. 82, 1249-1252 (1999).
  • V. W. Rampton, I. Kennedy, C. J. Mellor, B. Bracher, M. Henini, Z. R. Wasilewski, and P. E. Coleridge, "Surface acoustic wave interactions with composite fermions and the acousto-electric effect", Physica B 263, 205-207 (1999).
  • H. C. Liu, F. Szmulowicz, Z. R. Wasilewski, M. Buchanan, and G. J. Brown, "Intersubband infrared detector with optimized valence band quantum wells for 3-5 mu m wavelength region", J. Appl. Phys. 85, 2972-2976 (1999).
  • P. Hawrylak, C. Gould, A. Sachrajda, Y. Feng, and Z. R. Wasilewski, "Collapse of the Zeeman gap in quantum dots due to electronic correlations", Phys. Rev. B 59, 2801-2806 (1999).
  • S. Fafard, Z. R. Wasilewski, and M. Spanner, "Evolution of the energy levels in quantum dot ensembles with different densities", Appl. Phys. Lett. 75, 1866-8 (1999).
  • S. Fafard, Z. R. Wasilewski, C. Ni Allen, D. Picard, P. G. Piva, and J. P. McCaffrey, "Self-assembled quantum dots: five years later", Superlatt. Microstruct. 25, 87-96 (1999).
  • S. Fafard, Z. R. Wasilewski, C. N. Allen, D. Picard, M. Spanner, J. P. McCaffrey, and P. G. Piva, "Manipulating the energy levels of semiconductor quantum dots", Phys. Rev. B 59, 15368-73 (1999).
  • S. Fafard, Z. R. Wasilewski, C. N. Allen, K. Hinzer, J. P. McCaffrey, and Y. Feng, "Lasing in quantum-dot ensembles with sharp adjustable electronic shells", Appl. Phys. Lett. 75, 986-8 (1999).
  • M. Ershov, H. C. Liu, L. Li, M. Buchanan, Z. R. Wasilewski, and A. K. Jonscher, "Comments on "Negative capacitance effect in semiconductor devices" - Reply", IEEE Trans. Electron Devices 46, 2358 (1999).
  • E. Dupont, H. C. Liu, M. Buchanan, Z. R. Wasilewski, D. St-Germain, and P. C. Chevrette, "Pixelless infrared imaging devices based on the integration of an n-type quantum well infrared photodetector with a near-infrared light-emitting diode", presented at the Photodetectors: Materials and Devices IV Symposium, San Jose, CA, USA; Proceedings (SPIE, 1999), Vol. 3629, p. 155-162.
  • E. Dupont, H. C. Liu, M. Buchanan, Z. R. Wasilewski, D. St Germain, and P. Chevrette, "Pixel-less infrared imaging based on the integration of an n-type quantum-well infrared photodetector with a light-emitting diode", Appl. Phys. Lett. 75, 563-565 (1999).
  • I. V. Zozoulenko, A. S. Sachrajda, P. Zawadzki, K. F. Berggren, Y. Feng, and Z. R. Wasilewski, "The roles of leads and periodic orbits in the conductance fluctuations of high-mobility quantum dots", Semicond. Sci. Technol. 13, A7-A10 (1998).
  • I. V. Zozoulenko, A. S. Sachrajda, P. Zawadzki, K. F. Berggren, Y. Feng, and Z. R. Wasilewski, "Conductance fluctuations in a rectangular dot at constant magnetic fields", Phys. Rev. B 58, 10597-10601 (1998).
  • J. H. Smet, D. Weiss, K. von Klitzing, R. Fleischmann, R. Ketzmerick, T. Geisel, W. Wegscheider, P. T. Coleridge, Z. R. Wasilewski, and G. Weimann, "Composite fermions in magnetic focusing and commensurability experiments", Physica B 251, 15-22 (1998).
  • A. S. Sachrajda, R. Ketzmerick, C. Gould, Y. Feng, P. J. Kelly, A. Delage, and Z. R. Wasilewski, "Fractal conductance fluctuations in a soft-wall stadium and a Sinai billiard", Phys. Rev. Lett. 80, 1948-1951 (1998).
  • M. Potemski, L. Gravier, A. Truby, D. K. Maude, P. Hawrylak, Z. R. Wasilewski, and B. Etienne, "Emission from a two-dimensional electron gas in quantizing magnetic fields", Physica B 251, 566-570 (1998).
  • A. G. U. Perera, V. G. Silvestrov, S. G. Matsik, H. C. Liu, M. Buchanan, Z. R. Wasilewski, and M. Ershov, "Nonuniform vertical charge transport and relaxation in quantum well infrared detectors", J. Appl. Phys. 83, 991-997 (1998).
  • W. R. McKinnon, R. Driad, S. P. McAlister, A. Renaud, and Z. R. Wasilewski, "Temperature independent current blocking due to hot electrons in InAlAs/InGaAs double heterojunction bipolar transistors with composite collectors", J. Vac. Sci. Technol. A 16, 846-849 (1998).
  • D. K. Maude, S. Marty, L. B. Rigal, M. Potemski, J. C. Portal, Z. R. Wasilewski, M. Henini, L. Eaves, G. Hill, and M. A. Pate, "Skyrmion excitations in the limit of vanishing Lande g-factor", Physica B 251, 1-6 (1998).
  • H. C. Liu, L. Li, M. Buchanan, Z. R. Wasilewski, G. J. Brown, F. Szmulowicz, and S. M. Hegde, "A study of GaAs/AlGaAs p-type quantum well infrared photodetectors with different barrier heights", J. Appl. Phys. 83, 585-587 (1998).
  • H. C. Liu, L. Li, L. B. Allard, M. Buchanan, Z. R. Wasilewski, G. J. Brown, F. Szmulowicz, and S. M. Hegde, "P-type quantum well infrared photodetectors and pixelless long-wavelength infrared imaging devices", presented at the Photodetectors: Materials and Devices III Symposium, San Jose, CA, USA; Proceedings (SPIE, 1998), Vol. 3287, p. 167-172.
  • H. C. Liu, M. Gao, M. Buchanan, Z. R. Wasilewski, and P. J. Poole, "Up-conversion devices for 1.5-mu m imaging", presented at the International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, Ottawa, Canada, 1998; Proceedings (SPIE, 1998), Vol. 3491, p. 214-218.
  • H. C. Liu, M. Buchanan, and Z. R. Wasilewski, "How good is the polarization selection rule for intersubband transitions?", Appl. Phys. Lett. 72, 1682-1684 (1998).
  • H. C. Liu, M. Buchanan, and Z. R. Wasilewski, "Short wavelength (1-4 mu m) infrared detectors using intersubband transitions in GaAs-based quantum wells", J. Appl. Phys. 83, 6178-6181 (1998).
  • J. Lefebvre, J. Beerens, Y. Feng, Z. R. Wasilewski, J. Beauvais, and E. Lavallee, "Bernstein modes in a laterally modulated two-dimensional electron gas", Semicond. Sci. Technol. 13, 169-173 (1998).
  • J. Lefebvre, J. Beerens, Y. Feng, Z. R. Wasilewski, J. Beauvais, and E. Lavallee, "Far-infrared transmission study of Bernstein modes in a two-dimensional electron gas with a tunable lateral modulation", J. Vac. Sci. Technol. A 16, 821-824 (1998).
  • J. Lefebvre, J. Beerens, Y. Feng, Z. R. Wasilewski, J. Beauvais, and E. Lavallee, "Electrical transport and far-infrared transmission in a quantum wire array", J. Vac. Sci. Technol. B 16, 2915-2927 (1998).
  • I. Kennedy, V. W. Rampton, C. J. Mellor, B. H. Bracher, M. Henini, Z. R. Wasilewski, and P. T. Coleridge, "Composite fermion signature in the acoustoelectric effect in 2DES and 2DHS", Physica B 249, 36-39 (1998).
  • W. J. Keeler, G. A. Keeler, D. A. Harrison, and Z. R. Wasilewski, "Raman investigation of molecular beam epitaxy grown InGaAlAs epilayers lattice matched to InP for low Al concentrations", J. Appl. Phys. 83, 2266-2271 (1998).
  • S. Janz, M. Buchanan, P. vanderMeer, Z. R. Wasilewski, D. X. Xu, P. Piva, I. V. Mitchell, U. G. Akano, and A. Fiore, "Patterning the second-order optical nonlinearity of asymmetric quantum wells by ion implantation enhanced intermixing", Appl. Phys. Lett. 72, 3097-3099 (1998).
  • S. Janz, M. Buchanan, L. Delobel, P. van-der-Meer, Z. R. Wasilewski, D. X. Xu, U. G. Akano, I. V. Mitchell, P. G. Piva, and A. Fiore, "Patterning of the second-order susceptibility of an asymmetric quantum well waveguide by ion implantation enhanced quantum well intermixing", presented at the Conference on Lasers and Electro Optics Conference San Francisco, CA, USA, 3-8 May 1998; Technical Digest Series (IEEE Opt. Soc. America, Washington, DC, USA, 1998), Vol. 6, p. 506-7.
  • S. Janz, G. C. Aers, M. Buchanan, P. van-der-Meer, Z. R. Wasilewski, D. X. Xu, U. G. Akano, I. V. Mitchell, and P. G. Piva, "Intermixing of asymmetric quantum well superlattices for frequency conversion in nonlinear waveguides", presented at the LEOS'98. 11th Annual Meeting of  IEEE Lasers and Electro Optics Society Orlando, FL, USA, 1-4 Dec. 1998; Proceedings (IEEE, Piscataway, NJ, USA, 1998), Vol. 2, p. 63-4.
  • C. Gould, P. Hawrylak, A. S. Sachrajda, Y. Feng, and Z. R. Wasilewski, "Transport spectroscopy of lateral few electron quantum dots in a magnetic field", Physica B 258, 141-146 (1998).
  • M. Ershov, H. C. Liu, L. Li, M. Buchanan, Z. R. Wasilewski, and A. K. Jonscher, "Negative capacitance effect in semiconductor devices", IEEE Trans. Electron Devices 45, 2196-2206 (1998).
  • E. Dudziak, J. Bozym, D. Pruchnik, and Z. R. Wasilewski, "Large filling-factor-dependent spin splitting in magnetooptic Kerr effect in GaAs/AlGaAs multiple quantum wells", Acta Phys. Pol.A 94, 291-296 (1998).
  • Z. R. Wasilewski, S. J. Rolfe, and R. A. Wilson, "Contamination in molecular beam epitaxy: the role of arsenic drag effect", J. Cryst. Growth 175/176, 1270-1277 (1997).
  • Z. R. Wasilewski, M. M. Dion, D. J. Lockwood, P. Poole, R. W. Streater, and A. J. SpringThorpe, "Composition of AlGaAs", J. Appl. Phys. 81, 1683-1694 (1997).
  • Z. R. Wasilewski, M. M. Dion, D. J. Lockwood, P. Poole, R. W. Streater, and A. J. SpringThorpe, "Determination of AlxGa(1-x)As composition: The MBE perspective", J. Cryst. Growth 175, 238-243 (1997).
  • R. P. Taylor, R. Newbury, A. S. Sachrajda, Y. Feng, P. T. Coleridge, C. Dettmann, N. J. Zhu, H. Guo, A. Delage, P. J. Kelly, and Z. R. Wasilewski, "Self-similar magnetoresistance of a semiconductor Sinai billiard", Phys. Rev. Lett. 78, 1952-1955 (1997).
  • J. H. Smet, D. Weiss, K. von Klitzing, R. Fleischmann, R. Ketzmerick, T. Geisel, W. Wegscheider, P. T. Coleridge, Z. R. Wasilewski, and G. Weimann, "Enhanced soft-wall effects for composite fermions in magnetic focusing and commensurability experiments", Physica E 1, 153-160 (1997).
  • J. H. Smet, D. Weiss, K. von Klitzing, P. T. Coleridge, Z. R. Wasilewski, R. Bergmann, H. Schweizer, and A. Scherer, "Composite fermions in periodic and random antidot lattices", Phys. Rev. B 56, 3598-3601 (1997).
  • A. Przadka, K. J. Webb, D. B. Janes, H. C. Liu, and Z. R. Wasilewski, "Microwave measurement of shot noise in resonant tunneling diodes", Appl. Phys. Lett. 71, 530-532 (1997).
  • J. P. McCaffrey, Z. R. Wasilewski, M. D. Robertson, and J. M. Corbett, "Measurement of indium segregation in strained InxGa1-xAs/GaAs quantum wells by transmission electron microscopy", Philos. Mag. A 75, 803-821 (1997).
  • H. C. Liu, L. Li, M. Buchanan, and Z. R. Wasilewski, "Effect of the shape of the first barrier on quantum well infrared photodetector performance", J. Appl. Phys. 82, 889-892 (1997).
  • H. C. Liu, M. Buchanan, L. Jianmeng, Z. R. Wasilewski, P. H. Wilson, P. A. Marshall, R. A. Barber, P. Chow-Chong, J. W. Fraser, and J. Stapledon, "Focal plane imaging arrays based on GaAs/AlGaAs quantum well infrared photodetectors", presented at the International Conference on Applications of Photonic Technology. ICAPT '96, Montreal, Que., Canada, 29 July - 1 Aug. 1996; Proceedings (Plenum Press, New York, NY, USA, 1997), p. 311-18.
  • H. C. Liu, L. B. Allard, M. Buchanan, and Z. R. Wasilewski, "Novel and simply producible large-area focal plane infrared imaging device based on quantum wells", presented at the Infrared Technology and Applications XXIII Symposium, Orlando, FL, USA; Proceedings (SPIE, 1997), Vol. 3061, p. 256-264.
  • H. C. Liu, L. B. Allard, M. Buchanan, and Z. R. Wasilewski, "Pixelless infrared imaging device", Electron. Lett. 33, 379-380 (1997).
  • A. Fiore, Y. Beaulieu, S. Janz, J. P. McCaffrey, Z. R. Wasilewski, and D. X. Xu, "Second-harmonic generation by excitons in quasi-phase-matched asymmetric quantum well waveguides", presented at the Conference on Lasers and Electro-Optics, 1997. CLEO '97.,  (1997), Vol. 11, p. 61-61.
  • A. Fiore, Y. Beaulieu, S. Janz, J. P. McCaffrey, Z. R. Wasilewski, and D. X. Xu, "Quasiphase matched surface emitting second harmonic generation in periodically reversed asymmetric GaAs/AlGaAs quantum well waveguide", Appl. Phys. Lett. 70, 2655-2657 (1997).
  • M. Ershov, H. C. Liu, L. Li, M. Buchanan, Z. R. Wasilewski, and V. Ryzhii, "Unusual capacitance behavior of quantum well infrared photodetectors", Appl. Phys. Lett. 70, 1828-1830 (1997).
  • M. Ershov, H. C. Liu, M. Buchanan, Z. R. Wasilewski, and V. Ryzhii, "Photoconductivity nonlinearity at high excitation power in quantum well infrared photodetectors", Appl. Phys. Lett. 70, 414-416 (1997).
  • M. Ershov, H. C. Liu, M. Buchanan, and Z. R. Wasilewski, "Nonlinear photoresponse of quantum well infrared photodetectors at high-excitation power", presented at the Photodetectors: Materials and Devices II, San Jose, CA, USA; Proceedings (SPIE, 1997), Vol. 2999, p. 153-160.
  • R. Driad, W. R. McKinnon, S. P. McAlister, A. Renaud, and Z. R. Wasilewski, "Temperature independent current blocking in InAlAs/InGaAs double heterojunction bipolar transistors with composite collectors", presented at the IEEE Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, 4-6 Aug. 1997; Proceedings (IEEE, New York, NY, USA, 1997), p. 123-31.
  • S. A. Brown, J. F. Young, Z. R. Wasilewski, and P. T. Coleridge, "Fermi-edge singularities in photoluminescence from modulation-doped GaAs quantum wells", Phys. Rev. B 56, 3937-3940 (1997).
  • S. A. Brown, J. F. Young, J. A. Brum, P. Hawrylak, and Z. R. Wasilewski, "Evolution of the interband absorption threshold with the density of a two-dimensional electron gas (vol 54 B, pg R11082, 1996)", Phys. Rev. B 56, 1637-1637 (1997).
  • L. B. Allard, H. C. Liu, M. Buchanan, and Z. R. Wasilewski, "Pixelless infrared imaging utilizing a p-type quantum well infrared photodetector integrated with a light emitting diode", Appl. Phys. Lett. 70, 2784-2786 (1997).
  • R. P. Taylor, R. Newbury, A. S. Sachrajda, Y. Feng, P. T. Coleridge, Z. Wasilewski, N. Zhu, and H. Guo, "The transition from a square to Sinai billiard", presented at the 23rd International Conference on the Physics of Semiconductors. ICPS-23, Berlin, Germany, 21-26 July, 1996; Proceedings (World Scientific, Singapore, 1996), Vol. 2, p. 1549-52.
  • R. P. Taylor, R. Newbury, A. S. Sachrajda, Y. Feng, P. T. Coleridge, A. Delage, P. J. Kelly, Z. R. Wasilewski, and P. Zawadzki, "Geometry induced quantum interference: A continuous evolution from square to Sinai billiard", Superlatt. Microstruct. 20, 297-305 (1996).
  • S. Raymond, S. Fafard, J. McCaffrey, Y. Feng, S. Charbonneau, P. J. Poole, and Z. R. Wasilewski, "Photoluminescence properties of electrically-bias AlInAs/AlGaAs self-assembled quantum dots", presented at the 23rd International Conference on the Physics of Semiconductors (ICPS-23), Berlin, Germany, 21-26 July 1996; Proceedings (World Scientific, Singapore, 1996).
  • H. C. Liu, M. Buchanan, J. Li, Z. R. Wasilewski, P. H. Wilson, P. A. Marshall, R. A. Barber, J. W. Fraser, and J. Stapledon, "Focal Plane Imaging Arrays based on GaAs/AlGaAs Quantum Well Infrared Photodetectors", presented at the International Conference on Applications of Photonic Technology, Montreal, 29 July - 1 Aug 1996; Proceedings (Plenum, New York, 1996), Vol. 2.
  • H. C. Liu, J. M. Li, M. Buchanan, and Z. R. Wasilewski, "High-frequency quantum-well infrared photodetectors measured by microwave-rectification technique", IEEE J. Quantum Electron. 32, 1024-1028 (1996).
  • H. C. Liu, J. Li, Z. R. Wasilewski, and M. Buchanan, "Optoelectronic integration of quantum well intersubband photodetectors for two-dimensional array fabrication", presented at the Quantum Well and Superlattice Physics VI Symposium, San Jose, CA, USA; Proceedings (SPIE, 1996), Vol. 2694, p. 148-156.
  • H. C. Liu, M. Buchanan, Z. R. Wasilewski, J. Li, and L. C. Lenchyshyn, "Infrared detectors and arrays made of GaAs/AlGaAs quantum wells", Physics in Canada 52, 233 (1996).
  • L. C. Lenchyshyn, H. C. Liu, M. Buchanan, and Z. R. Wasilewski, "An asymmetric quantum well infrared photodetector with voltage-tunable narrow and broad-band response", J. Appl. Phys. 79, 3307-3311 (1996).
  • L. C. Lenchyshyn, H. C. Liu, M. Buchanan, and Z. R. Wasilewski, "Voltage-tuning in multi-color quantum well infrared photodetector stacks", J. Appl. Phys. 79, 8091-8097 (1996).
  • P. V. Kolev, M. J. Deen, H. C. Liu, J. M. Li, M. Buchanan, and Z. R. Wasilewski, "Thermally activated current-voltage asymmetry in quantum-well inter-subband photodetectors", Can. J. Phys. 74, S9-S15 (1996).
  • S. Janz, Y. Beaulieu, F. Chatenoud, A. Delage, H. Y. He, R. Normandin, P. van der Meer, and Z. R. Wasilewski, "Nonlinear optics at the Institute for Microstructural Sciences: materials and applications", Physics in Canada 52, 256 (1996).
  • V. K. Gupta, R. L. Williams, Z. R. Wasilewski, M. Dion, G. C. Aers, and C. E. Norman, "Selective area bandgap control during MBE growth of InGaAs/InAlAs QWs for optoelectronic device applications", presented at the LEOS'96 9th Annual Meeting, Boston, MA, USA, 18-19 Nov. 1996; Proceedings (IEEE, New York, NY, USA, 1996), Vol. 2, p. 126-7.
  • M. Fallahi, N. Peyghambarian, K. Kasunic, M. Dion, and Z. R. Wasilewski, "Circular-grating surface-emitting DBR laser array for free-space applications", Electron. Lett. 32, 1583-1585 (1996).
  • S. Fafard, Z. R. Wasilewski, J. McCaffrey, S. Raymond, and S. Charbonneau, "InAs self-assembled quantum dots on InP by molecular beam epitaxy", Appl. Phys. Lett. 68, 991-993 (1996).
  • E. Dudziak, J. Bozym, D. Pruchnik, and Z. R. Wasilewski, "Faraday rotation in multiple quantum wells of GaAs/AlGaAs", Acta Phys. Pol.A 90, 1022-1026 (1996).
  • M. M. Dion, P. Levesque, Z. R. Wasilewski, M. Fallahi, F. Chatenoud, R. L. Williams, and S. J. Rolfe, "Effect of p-dopant positioning in low-threshold, InGaAs/GaAs/AlGaAs, MQW GRINSCH lasers with GaAs etch-stop layer for multiwavelength applications", presented at the Fabrication, Testing, and Reliability of Semiconductor Lasers Symposium, San Jose, CA, USA; Proceedings (SPIE, 1996), Vol. 2683, p. 8-17.
  • M. Dion, Z. R. Wasilewski, F. Chatenoud, V. K. Gupta, A. R. Pratt, R. L. Williams, C. E. Norman, M. R. Fahy, and A. Marinopoulou, "Extremely low threshold current density InGaAs/GaAs/AlGaAs strained SQW laser grown by MBE with As-2", Can. J. Phys. 74, S1-S4 (1996).
  • M. Dion, V. K. Gupta, Z. R. Wasilewski, C. E. Norman, A. R. Pratt, P. Chow-Chong, and R. L. Williams, "A comparison of indium migration in the MBE growth of SQW InGaAs-GaAs-AlGaAs lasers on patterned substrates using As2 and As4", presented at the 15th IEEE International Semiconductor Laser Conference, Haifa, Israel, 13-18 Oct. 1996; Conference Digest (IEEE, New York, NY, USA, 1996), p. 103-4.
  • P. T. Coleridge, Z. R. Wasilewski, and P. Zawadzki, "Growth and characterization of high mobility two-dimensional electron gases", J. Vac. Sci. Technol. B 14, 2290-2292 (1996).
  • J. A. Brum, S. Brown, P. Hawrylak, J. F. Young, and Z. R. Wasilewski, "Mobile excitons and Fermi edge singularities in an interacting 2D electron gas", Surf. Sci. 362, 424-427 (1996).
  • S. A. Brown, J. F. Young, J. A. Brum, P. Hawrylak, and Z. R. Wasilewski, "Density-Dependence of Screening Strength in Tow Dimensional Electron Gases: Quantitative Absorption Experiments and Realistic Theory", presented at the XX International Quantum Electronics Conference; Technical Digest Series (Optical Soc.of America, 1996).
  • S. A. Brown, J. F. Young, J. A. Brum, P. Hawrylak, and Z. R. Wasilewski, "Evolution of the interband absorption threshold with the density of a two-dimensional electron gas", Phys. Rev. B 54, R11082-R11085 (1996).
  • S. A. Brown, J. F. Young, J. A. Brum, P. Hawrylak, and Z. Wasilewski, "Evolution of optical spectra with the density of 2D electrons: many-body effects and charged excitons", presented at the 23rd International Conference on the Physics of Semiconductors. ICPS-23, Berlin, Germany, 21-26 July 1996; Proceedings (World Scientific, Singapore, 1996), Vol. 3, p. 2131-4.
  • P. J. Poole, M. Buchanan, G. C. Aers, Z. R. Wasilewski, M. M. Dion, M. Fallahi, J. J. He, N. S. Charbonneau, E. S. Koteles, I. V. Mitchell, and R. D. Goldberg, "Transparent waveguides for WDM transmitter arrays using quantum well shape modification", presented at the Components for Wavelength Division Multiplexing Symposium, San Jose, CA, USA; Proceedings (SPIE, 1995), Vol. 2402, p. 115-122.
  • H. C. Liu, J. Li, Z. R. Wasilewski, and M. Buchanan, "Integrated quantum well intersubband photodetector and light-emitting diode for thermal imaging", presented at the Infrared Technology XXI Symposium, San Diego, CA, USA; Proceedings (SPIE, 1995), Vol. 2552, p. 336-342.
  • H. C. Liu, J. Li, Z. R. Wasilewski, and M. Buchanan, "Integrated quantum well intersubband photodetector and light emitting diode", Electron. Lett. 31, 832-833 (1995).
  • H. C. Liu, J. Li, G. C. Aers, C. R. Leavens, M. Buchanan, and Z. R. Wasilewski, "Shot-noise suppression in resonant tunneling", Phys. Rev. B 51, 5116-5120 (1995).
  • L. C. Lenchyshyn, H. C. Liu, M. Buchanan, and Z. R. Wasilewski, "Mid-wavelength infrared detection with InGaAs/AlGaAs multiple quantum well strictures", Semicond. Sci. Technol. 10, 45-48 (1995).
  • S. Janz, J. He, Z. R. Wasilewski, and M. Cada, "Low threshold optical bistable switching in an asymmetric lambda/4-shifted distributed-feedback heterostructure", Appl. Phys. Lett. 67, 1051-1053 (1995).
  • M. Fallahi, M. Dion, Z. R. Wasilewski, M. Buchanan, N. Nourina, J. Stapledon, and R. Barber, "Performance improvement of circular-grating surface-emitting DBR laser using and MQW structure with etch-stop layer", Electron. Lett. 31, 1581-2 (1995).
  • M. Fallahi, F. Chatenoud, I. M. Templeton, M. M. Dion, Z. R. Wasilewski, M. Buchanan, and R. A. Barber, "Recent developments on InGaAs/GaAs circular-grating distributed Bragg reflector lasers", presented at the Circular-Grating Light-Emitting Sources Symposium, San Jose, CA, USA,  (SPIE, 1995), Vol. 2398, p. 135-141.
  • E. Dupont, P. B. Corkum, H. C. Liu, M. Buchanan, and Z. R. Wasilewski, "Phase-Controlled Currents in Semiconductors", Phys. Rev. Lett. 74, 3596-3599 (1995).
  • P. T. Coleridge, Z. R. Wasilewski, P. Zawadzki, A. S. Sachrajda, and H. A. Carmona, "Composite-fermion effective masses", Phys. Rev. B 52, R11603-R11606 (1995).
  • B. Xing, H. C. Liu, P. H. Wilson, M. Buchanan, Z. R. Wasilewski, and J. G. Simmons, "Noise and photoconductive gain in AlGaAs/GaAs quantum well intersubband infrared photodetectors", J. Appl. Phys. 76, 1889-1894 (1994).
  • Z. R. Wasilewski, H. C. Liu, and M. Buchanan, "Studies of Si segregation in GaAs using current-voltage characteristics of Quantum Well Infrared Photodetectors", J. Vac. Sci. Technol. B 12, 1273-1276 (1994).
  • A. G. Steele, M. Buchanan, H. C. Liu, and Z. R. Wasilewski, "Postgrowth tuning of quantum-well infrared detectors by rapid thermal annealing", J. Appl. Phys. 75, 8234-8236 (1994).
  • P. J. Poole, P. G. Piva, M. Buchanan, G. Champion, I. M. Templeton, G. C. Aers, R. L. Williams, A. P. Roth, Z. R. Wasilewski, E. S. Koteles, N. S. Charbonneau, and J. Beauvais, "Enhanced quantum well intermixing using multiple ion implantation", presented at the Quantum Well and Superlattice Physics V Symposium, Los Angeles, CA, USA; Proceedings (SPIE, 1994), Vol. 2139, p. 130-137.
  • P. Poole, P. G. Piva, M. Buchanan, G. C. Aers, B. S. Williams, A. P. Roth, M. Dion, Z. R. Wasilewski, E. S. Koteles, S. Charbonneau, and J. Beauvais, "The Enhancement of Quantum Well Intermixing through repeated Ion Implantation", Semicond. Sci. Technol. 9, 2134-8 (1994).
  • P. G. Piva, P. J. Poole, S. Charbonneau, E. Koteles, M. Buchanan, G. C. Aers, A. P. Roth, Z. R. Wasilewski, J. Beauvais, and R. D. Goldberg, "Enhanced Band tuning of semiconductor quantum well structures using sequential multiple ion implants", Journal of Superlattices and Microstructures 15, 385 (1994).
  • P. G. Piva, P. J. Poole, M. Buchanan, G. Champion, I. Templeton, G. C. Aers, B. S. Williams, Z. R. Wasilewski, E. S. Koteles, and S. Charbonneau, "Enhanced compositional disordering of quantum wells in GaAs/AlGaAs and InGaAs/GaAs using focused Ga[sup  + ] ion beams", Appl. Phys. Lett. 65, 621-623 (1994).
  • A. J. McGibbon, S. J. Pennycook, and Z. R. Wasilewski, "Structural characterization of semiconductor heterostructures by atomic resolution Z-contrast imaging at 300KV", presented at the Material Research Society Symposium; Proceedings (MRS, 1994), Vol. 323, p. 299-305.
  • H. C. Liu, P. H. Wilson, M. Lamm, A. G. Steele, Z. R. Wasilewski, J. Li, M. Buchanan, and J. G. Simmons, "Low dark current dual band infrared photodetector using thin AlAs barriers and Gamma-X mixed intersubband transition in GaAs quantum wells", Appl. Phys. Lett. 64, 475-477 (1994).
  • H. C. Liu, J. Li, Z. R. Wasilewski, M. Buchanan, P. H. Wilson, M. Lamm, and J. G. Simmons, "A three-color voltage tunable quantum well intersubband photodetectors for long wavelength infrared", NATO ASI  Series E, Applied Science 270, 123-135 (1994).
  • H. C. Liu, J. Li, M. Buchanan, Z. R. Wasilewski, and J. G. Simmons, "Regular and periodic peaks in device current, capacitance, and intersubband photocurrent from a multiple double-well structure", presented at the Quantum Well and Superlattice Physics V Symposium, Los Angeles, CA, USA; Proceedings (SPIE, 1994), Vol. 2139, p. 269-279.
  • J. Li, H. C. Liu, M. Buchanan, Z. R. Wasilewski, and J. G. Simmons, "Regular and periodic peaks in device current, capacitance, and intersubband photocurrent from a multiple-double-well", J. Appl. Phys. 75, 1748-1753 (1994).
  • K. Krishnamurthy, R. G. Harrison, H. C. Liu, M. Buchanan, Z. R. Wasilewski, J. R. Thompson, H. G. Kuno, and C. P. Wen, presented at the International Microwave Symposium,  (IEEE MTT-S, 1994), Vol. 1, p. 313-16.
  • E. Dupont, P. B. Corkum, H. C. Liu, Z. R. Wasilewski, and M. Buchanan, "Coherent control of currents in semiconductors", presented at the LEOS'94, Boston, MA, USA, 31 Oct. - 3 Nov. 1994; Proceedings (IEEE, New York, NY, USA, 1994), Vol. 2, p. 78-9.
  • E. Dupont, P. B. Corkum, P. W. Dooley, H. C. Liu, P. H. Wilson, M. Lamm, M. Buchanan, and Z. R. Wasilewski, "Non-resonant two-photon absorption in quantum well infrared detectors", NATO ASI  Series E, Applied Science 270, 493-90 (1994).
  • E. Dupont, P. Corkum, H. C. Liu, P. H. Wilson, M. Buchanan, and Z. R. Wasilewski, "Two-photon intersubband transitions in quantum well infrared photoconductors", Appl. Phys. Lett. 65, 1560-1562 (1994).
  • W. Chen, H. J. Martis, Z. R. Wasilewski, and S.-i. Tamura, "Attenuation and velocity of 56 GHz longitudinal phonons in gallium arsenide from 50 K to 300 K", Philos. Mag. B 70 (1994).
  • P. H. Wilson, M. Lamm, H. C. Liu, J. Li, M. Buchanan, Z. R. Wasilewski, and J. G. Simmons, "A comparison study of quantum well infrared photodetectors made by different molecular beam epitaxial systems", Semicond. Sci. Technol. 8, 2010-2014 (1993).
  • Z. H. Lu, B. Bryskiewicz, J. P. McCaffrey, Z. R. Wasilewski, and M. J. Graham, "Ultraviolet-ozone oxidation of GaAs(100) and InP(100)", J. Vac. Sci. Technol. B 11, 2033-2037 (1993).
  • H. C. Liu, Z. R. Wasilewski, M. Buchanan, and H. Chu, "Segregation of Si d doping in GaAs-AlGaAs quantum wells and the cause of asymmetry in the current-voltage characteristics of intersubband infrared detectors", Appl. Phys. Lett. 63, 761-763 (1993).
  • H. C. Liu, A. G. Steele, Z. R. Wasilewski, and M. Buchanan, "Dark current mechanism and the cause of the current-voltage asymmetry in quantum-well intersubband photodetectors", presented at the Physical Concepts and Materials for Novel Optoelectronic Device Applications II Symposium, Trieste, France; Proceedings (SPIE, 1993), Vol. 1985, p. 500-511.
  • H. C. Liu, A. G. Steele, M. Buchanan, and Z. R. Wasilewski, "Dark current in quantum well infrared photodetectors", J. Appl. Phys. 73, 2029-2031 (1993).
  • H. C. Liu, J. Li, J. R. Thompson, Z. R. Wasilewski, M. Buchanan, and J. G. Simmons, "Multicolor voltage tunable quantum-well infrared photodetector", IEEE Trans. Electron Devices 40, 2142 (1993).
  • H. C. Liu, J. Li, J. Thompson, Z. R. Wasilewski, M. Buchanan, and J. G. Simmons, "Multicolor voltage tunable quanum well infrared photodetector", IEEE Electron Device Lett. 14, 566-568 (1993).
  • H. C. Liu, J. Li, M. Buchanan, Z. R. Wasilewski, and J. G. Simmons, "Regular periodic intersubband photocurrent peaks in a multiple double-well structure", Phys. Rev. B 48, 1951-1954 (1993).
  • R. E. Dunin-Borkowski, D. D. Perovic, Z. R. Wasilewski, W. M. Stobbs, and A. J. Craven, "The characterization of delta-doping in gallium arsenide by Fresnel Contrast Analysis", presented at the Institute of Physics Electron and Analysis Group Conference: Electron Microscopy and Analysis; Proceedings (1993), p. 271-4.
  • A. G. Steele, H. C. Liu, M. Buchanan, and Z. R. Wasilewski, "Influence of the number of wells in the performance of multiple quantum well intersubband infrared detectors", J. Appl. Phys. 72, 1062-1064 (1992).
  • P. Roth, D. Morris, Q. Sun, C. Lacelle, Z. R. Wasilewski, P. Manie, and A. Bensaoula, "Anisotropy of InGaAs/GaAs heterostructures grown by low-pressure MOVPE and CBE", J. Cryst. Growth 120, 212-217 (1992).
  • H. C. Liu, A. G. Steele, M. Buchanan, and Z. R. Wasilewski, "Effects of the upper state position and the number of wells on the performance of intersubband  quantum well detectors", presented at the NATO Advanced Research Workshop on Intersubband Transitions in Quantum Wells, Corsica, France, 10-14 Sept, 1991; Proceedings (Plenum, 1992), p. 57-63.
  • H. C. Liu, A. G. Steele, M. Buchanan, and Z. R. Wasilewski, "Infrared transmission and photocurrent spectroscopic study of coupled quantum well structure", Surf. Sci. 267, 514-517 (1992).
  • H. C. Liu, A. G. Steele, M. Buchanan, and Z. R. Wasilewski, "Long wavelength infrared photo-induced switching of a resonant tunneling diode using the intersubband transition", IEEE Electron Device Lett. 13, 363-365 (1992).
  • D. Landheer, G. C. Aers, and Z. R. Wasilewski, "Effective mass in the barriers of GaAs/AlAs resonant tunneling double barrier diodes", Superlatt. Microstruct. 11, 55-59 (1992).
  • G. C. Aers and Z. R. Wasilewski, "Improved growth uniformity in molecular-beam epitaxy: Alternative strategies", J. Vac. Sci. Technol. B 10, 815-818 (1992).
  • R. L. Williams, P. Coleridge, Z. R. Wasilewski, M. Dion, A. Sachrajda, and S. Rolfe, "Silicon atomic plane doping in MBE grown InAs/GaAs", Solid State Commun. 78, 493-497 (1991).
  • Z. R. Wasilewski, G. C. Aers, A. J. SpringThorpe, and C. J. Miner, "Growth uniformity studies in molecular beam epitaxy", J. Cryst. Growth 111, 70-74 (1991).
  • Z. R. Wasilewski, G. C. Aers, A. J. SpringThorpe, and C. J. Miner, "Studies and modeling of growth uniformity in molecular beam epitaxy", J. Vac. Sci. Technol. B 9, 120-31 (1991).
  • A. G. Steele, H. C. Liu, M. Buchanan, and Z. R. Wasilewski, "Importance of the upper state position in the performance of quantum well intersubband infrared detectors", Appl. Phys. Lett. 59, 3625-3627 (1991).
  • A. J. SpringThorpe, A. Majeed, C. J. Miner, Z. R. Wasilewski, and G. C. Aers, "Improved thickness uniformity in molecular beam epitaxial growth of GaAs Using a tilted conical insert crucible", J. Vac. Sci. Technol. A 9, 3175-3177 (1991).
  • A. P. Roth, Z. R. Wasilewski, Q. Sun, C. Lacelle, T. Bryskiewicz, D. Coulas, and J. P. Noad, "Properties of InGaAs epitaxial layers lattice matched to InGaAs single crystal substrates", J. Cryst. Growth 113, 379-384 (1991).
  • H. C. Liu, A. G. Steele, M. Buchanan, and Z. R. Wasilewski, "Infrared transmission and photocurrent study of intersubband transitions in a coupled asymmetrical quantum well structure", J. Appl. Phys. 70, 7560-7563 (1991).
  • H. C. Liu, M. Buchanan, Z. R. Wasilewski, and H. Chu, "Charge non-neutrality in the quantum well region of a GaAs-AlGaAs intersubband 9 mu m detector", Appl. Phys. Lett. 58, 1059-1061 (1991).
  • H. C. Liu, M. Buchanan, and Z. R. Wasilewski, "Measurements of intersubband photocurrents from quantum wells in asymmetrical-double-barrier structures", Phys. Rev. B 44, 1411-1414 (1991).
  • H. C. Liu, M. Buchanan, G. C. Aers, Z. R. Wasilewski, W. T. Moore, R. L. S. Devine, and D. Landheer, "Transport measurements of resonant-tunneling widths", Phys. Rev. B 43, 7086-7090 (1991).
  • H. C. Liu, M. Buchanan, G. C. Aers, and Z. R. Wasilewski, "Single quantum well intersubband infrared detector using GaAs-AlGaAs asymmetrical double barrier structures", Semicond. Sci. Technol. 6, C124-C127 (1991).
  • H. C. Liu, G. C. Aers, M. Buchanan, Z. R. Wasilewski, and D. Landheer, "Intersubband photocurrent from the quantum well of an asymmetrical double-barrier structure", J. Appl. Phys. 70, 935-940 (1991).
  • N. E. J. Hunt, P. E. Jessop, and Z. R. Wasilewski, "Experimental and theoretical electroabsorption in an InGaAs-GaAs strained-lauer superlattice, and the performance of waveguide modulator", Can. J. Phys. 69, 483 (1991).
  • J. J. Dubowski, J. R. Thompson, R. Benzaquen, A. P. Roth, and Z. R. Wasilewski, "Epitaxy of Cd0.90Mn0.10Te for optoelectronic devices", Can. J. Phys. 69, 270 (1991).
  • J. J. Dubowski, A. P. Roth, Z. R. Wasilewski, and S. Rolfe, "CdTe-Cd1 - xMnxTe multiple quantum well structures grown by pulsed laser evaporation and epitaxy", Appl. Phys. Lett. 59, 1591-1593 (1991).
  • M. G. Daly, N. E. J. Hunt, D. M. Bruce, P. E. Jessop, Z. R. Wasilewski, and A. J. SpringThorpe, "Electroabsorption devices in multiple quantum wells and superlattices", presented at the First International Workshop on Photonic Networks: Components and Applications; Proceedings (1991), p. 406-12.
  • A. Buckthought, R. Boulet, A. Sachrajda, Z. R. Wasilewski, P. Zawadzki, and F. Guillon, "Activation measurements of the fractional quantum hall effect in a tilted magnetic field as a function of electron density", Solid State Commun. 78, 191-194 (1991).
  • P. Brockmann, J. F. Young, Z. R. Wasilewski, and M. Buchanan, "Influence of scattering on the resonant transfer of holes between two-dimensional states", Phys. Rev. B 44, 13787-13790 (1991).
  • A. Sachrajda, R. Boulet, Z. R. Wasilewski, P. Coleridge, and F. Guillon, "Activation measurements of the fractional quantum hall effect as a function of magnetic field", Solid State Commun. 74, 1021-1025 (1990).
  • H. C. Liu, M. Buchanan, and Z. R. Wasilewski, "Experimental study of intersubband infrared transitions in coupled quantum wells under an electric field", J. Appl. Phys. 68, 3780 (1990).
  • P. L. Janega, F. Chatenoud, and Z. R. Wasilewski, "Very low resistivity ohmic contact to p-type GaAs using InxGa1-xAs interlayer", Electron. Lett. 26, 1395 (1990).
  • J. E. Dmochowski, Z. R. Wasilewski, and R. A. Stradling, "Localized electron states with A1 symmetry of substitutional impurities - are they DX-centres?", presented at the 4th International Conference on Shallow Impurities in Semiconductors; Proceedings (1990), p. 65-66.
  • M. Buchanan, H. C. Liu, T. G. Powell, and Z. R. Wasilewski, "Magneto-resonant tunneling from a lightly doped contact region interacting with quasi-two-dimensional states in an accumulation layer", J. Appl. Phys. 68, 4313-4315 (1990).
  • T. Bryskiewicz, P. Edelman, Z. R. Wasilewski, D. Coulas, and J. Noad, "Properties of very uniform InxGa1 - xAs single crystals grown by liquid-phase electroepitaxy", J. Appl. Phys. 68, 3018-3020 (1990).
  • S. Holmes, C. C. Phillips, R. A. Stradling, Z. R. Wasilewski, R. Droopad, S. D. Parker, W. T. Yuen, P. Balk, A. Brauers, H. Heinecke, C. Plass, M. Weyers, T. Foxon, B. A. Joyce, G. W. Smith, and C. R. Whitehouse, "Residual donor contamination in MOCVD, MOMBE and MBE GaAs studied by far-infrared spectroscopy", Semicond. Sci. Technol. 4, 782 (1989).
  • C. G. Armistead, R. A. Stradling, and Z. R. Wasilewski, "Comments on the identification of high order spectral lines of donors in semiconductors in the intermediate magnetic fields", Semicond. Sci. Technol. 4, 557 (1989).
  • F. Kuchar, Z. R. Wasilewski, R. A. Stradling, and J. Wagner, "Optical, Magneto-Optical and Transport Investigations of the Narrow Gap System InAsxSb1-x", presented at the NATO Workshop on Optical Properties of Narrow-Gap Low Dimensional Semiconductors; NATO ASI Series B (Plenum, 1987), Vol. 152, p. 219.
  • Z. R. Wasilewski, R. A. Stradling, and S. Porowski, "Magneto-Optical Investigation of the Deep Centre in InSb", Solid State Commun. 57, 123 (1986).
  • Z. R. Wasilewski and R. A. Stradling, "Magneto-Optical Studies of n-GaAs under High Hydrostatic Pressure", Semicond. Sci. Technol. 1, 264 (1986).
  • Z. R. Wasilewski, S. Porowski, and R. A. Stradling, "High Pressure Cell for Magneto-Optical Measurements", J. Phys. E 19, 480 (1986).
  • C. M. Sotomayor-Torres, P. A. Claxton, C. Roberts, R. A. Stradling, and Z. R. Wasilewski, "Magneto-Transport Studies in MBE-grown GaInAs-InP Heterostructures under High Hydrostatic Pressure.", Surf. Sci. 170, p.464 (1986).
  • I. Gorczyca, Z. R. Wasilewski, and R. A. Stradling, "The Pressure Induced Resonance Interaction between Donor Levels Associated with L- and G-Conduction Band Minima in InSb, (Pseudopotential-effective mass theory)", presented at the 24th EHPRG Conference on Solid State Physics, Guildford, UK, 1986; Proceedings (1986).
  • Z. R. Wasilewski, R. A. Stradling, M. Baj, L. C. Brunel, S. Huant, W. Trzeciakowski, and S. Porowski, "The Interaction Between Deep and Shallow Levels in InSb and GaAs in High Magnetic Field and High Hydrostatic Pressure.", Acta Phys. Pol.A 67, 405 (1985).
  • M. Baj, L. C. Brunel, S. Huant, W. Trzeciakowski, Z. Wasilewski, and R. A. Stradling, "Shallow donors in high magnetic fields in InSb under high hydrostatic pressure", presented at the 17th International Conference on the Physics of Semiconductors. ICPS-17, San Francisco, CA, USA, 6-10 Aug. 1984; Proceedings (Springer-Verlag, New York, NY, USA, 1985), p. 667-70.
  • C. J. Armistead, F. Kuchar, S. P. Najda, S. Porowski, C. Sotomayor-Torres, R. A. Stradling, and Z. Wasilewski, "The use of hydrostatic pressure as an additional variable in infrared magneto-optical studies of III-V compounds and alloys", presented at the 17th International Conference on the Physics of Semiconductors. ICPS-17, San Francisco, CA, USA, 6-10 Aug. 1984 (Springer-Verlag, New York, NY, USA, 1985), p. 1047-50.
  • W. Drozdzewicz, A. M. Hennel, Z. R. Wasilewski, B. Clerjaud, F. Gendron, C. Porte, and R. Germer, "Identification of the double acceptor state of isolated nickel in gallium arsenide", Phys. Rev. B 29, 2438-2442 (1984).
  • Z. R. Wasilewski, A. M. Davidson, R. A. Stradling, and S. Porowski, "Far Infrared Studies of the Bound and Free Carriers in n-InSb as a Function of Hydrostatic Pressure", Physica B 117, 89 (1983).
  • Z. R. Wasilewski, A. M. Davidson, R. A. Stradling, and S. Porowski, "Magneto-Optical Studies of Donor Impurities under high Hydrostatic Pressure", Lecture Notes in Physics 177, 233 (1983).
  • Z. Wasilewski, A. M. Davidson, P. Knowles, S. Porowski, and R. A. Stradling, "Far-infrared studies of the bound and free carriers in n-InSb as a function of hydrostatic pressure", presented at the 4th International Conference on Physics of Narrow Gap Semiconductors, Linz, Austria, 1981; Proceedings of (Springer-Verlag, Berlin, West Germany, 1982), p. 183-7.
  • W. Drozdzewicz, A. M. Hennel, and Z. R. Wasilewski, "Identification of the Ni(3d+) Charge State in GaAs:Ni by Piezoabsorption Measurements", presented at the Semi-Insulating III-V Materials Symposium, Evian, France; Proceedings (1982).
  • A. M. Davidson, P. Knowles, P. Makao, R. A. Stradling, S. Porowski, and Z. R. Wasilewski, "Magneto-Optical Studies of Semiconductors", Solid State Sciences 24, 84 (1981).
  • Z. R. Wasilewski, A. M. Davidson, P. Knowles, S. Porowski, and R. A. Stradling, "Magneto-optical studies of n-InSb under high hydrostatic pressure", presented at the 15th International Conference on Physics of Semiconductors, Linz; Proceedings (Springer, 1980), p. 183.

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