Investigations on some side effects and defect formation during plasma etching of nanostructures using III-V semiconductors
Professor Jean-Pierre Landesman
Engineering Physics Department
McMaster University, Ontario, Canada
Location: QNC 1501
Abstract: Reactive ion etching, based on the controlled interaction of the semiconductor surface with highly reactive plasmas, is one of the most important building blocks in nanotechnology platforms nowadays. This technique was introduced in the fabrication processes several decades ago, however it relies on a complex interaction between the surface and the plasma phase. There are still some aspects of this interaction which
require investigations, especially as the tools become more powerful, for example on the route towards faster etching processes with better control on the critical dimensions.
In this presentation, I will focus on the issue of the damage that can be introduced in the etched materials due to the presence of energetic ions in the plasma for example. I will discuss some of the “old” work that was undertaken by pioneering groups to investigate associated defect formation, especially in III-V materials. I will then show some more
recent results that build on these ideas, mainly using spectroscopic techniques with high spatial resolution to investigate defect formation in quantum well structures on InP, after exposure to different etching plasmas. I will also address the question of mechanical stress that can appear in some structures after plasma etching, for example in the case of InP etched with chlorine-based chemistries.
Bio: Jean-Pierre Landesman is a Professor at the University of Rennes-1 (France). He graduated from the “Ecole Centrale de Paris” (School of Engineering) and received his PhD in Materials Science from the University of Strasbourg (France). He has worked with different companies involved in electronic and opto-electronic semiconductor device research and development. He was first with Philips Research Laboratories, and then with Thomson-CSF Corporate Research (this company is now Thales). In 2000, he moved to the University of Nantes (France) as a Professor, and in 2011 to his present position at the University of Rennes-1. From 2012 to 2016 he was the Director of the Institute of Physics at Rennes, a joint research institute affiliated to the CNRS and to the University. He is presently a visiting professor at McMaster University (Engineering Physics Department).
Jean-Pierre Landesman has co-authored 83 papers in peer-reviewed scientific journals, he has been invited in a number of universities and private research centers in different countries (Germany, Brazil, China, Japan, USA, Spain, Canada, ...).
All are welcome to attend.
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