@article{35, keywords = {Graphene Oxide Femto-Gel Development}, author = {Inna Novodchuk and M Kayaharman and Khaled Ibrahim and Sahr Al-Tuairqi and Mehrdad Irannejad and E Abdel-Rahman and Joseph Sanderson and Michal Bajcsy and Mustafa Yavuz}, title = {B/N co-doped graphene oxide gel with extremely-high mobility and ION/IOFF for large-area field effect transistors}, abstract = {

Thin films of large-area graphene and graphene-based materials are highly desired for electrical applications. However, the current state-of-art synthesis methods produce large-area graphene films with multiple grain boundaries (GBs) that highly hinder their charge carrier mobilities and Ion/Ioff ratios. Here, we demonstrate a femtosecond laser ablation process to produce B and N co-doped graphene oxide (GO) gels with controllable total doping percentage (between 0.8 at%-2.3 at%) and effectively reduced GBs concentration. The charge carrier mobilities and Ion/Ioff ratios of the produced large-area gel (∼100 × 2400 μm2) field effect transistors (FETs) revealed extremely-high values of up to 9000 ± 3000 cm2/V and 9.7E+5, respectively, comparable to the state-of-art values of a single monolayer graphene nanoflake. The increased total doping percentage also proved to improve the chemical reactivity of the gels. This femtosecond laser ablation approach could prove effective for large-area FETs with controllable mobility, Ion/Ioff ratio, and chemical reactivity.

}, year = {2020}, journal = {Carbon}, volume = {158}, chapter = {624-630}, month = {2020/3/1}, url = {https://www.sciencedirect.com/science/article/pii/S0008622319311595}, doi = {10.1016/j.carbon.2019.11.034}, }