Jalil, A. ., Ilyas, S. Z., Ahmed, S. ., Hassan, A. ., Li, D. ., Musselman, K. ., & Khan, Q. . (2021). A new 2D Si3X (X= S, 0) direct band gap semiconductor with anisotropic carrier mobility. Surface Science, 704, 121736.
Reference author: Qasim Khan
First name
Qasim
Last name
Khan
Subramanian, A. ., Hussain, S. ., Din, N. ., Abbas, G. ., Shuja, A. ., Lei, W. ., Chen, J. ., Khan, Q. ., & Musselman, K. . (2020). Solution-Processed Vertical Field-Effect Transistor with Separated Charge Generation and Charge Transport Layers for High-Performance Near-Infrared Photodetection. ACS Applied Electronic Materials.