The effect of varying ultrafast pulse laser energies on the electrical properties of reduced graphene oxide sheets in solution

Laser treatment of graphene oxide solution among other techniques is a well-established technique for producing reduced graphene sheets. However, production of high-quality ultra-low sheet resistance reduced graphene oxide (rGO) sheets in solution has been a challenge due to their high degree of randomness, defect-rich medium, and lack of controlability. Recent studies lack an in-depth analytic comparison of laser treatment parameters that yield the highest quality rGO sheets with a low defect ratio. Hence, in this study, we implement a comprehensive comparison of laser treatment parameters and their effect on the yielded rGO sheets from an electronic and physical standpoint. Ultra-low sheet resistance graphene oxide sheets were fabricated using ultrafast laser irradiation with different laser pulse energies in the range of 0.25–2 mJ. Laser treatment for 10 min using a pulse energy of 1 mJ resulted in an increase in the defect spacing, accompanied by a large red shift in the optical absorption of the C=C bond, indicating significant restoration of the sp ² carbon bonds. These enhancements resulted in a significant reduction in the electrical resistance of the rGO flakes (up to 2 orders of magnitude), raising the electron mobility of the films produced using the irradiated graphene oxide a step closer to that of pristine graphene films. From this study, we can also deduce which exposure regimes result in the fabrication of quantum dots and continuous defect-free films.