The MIT virtual source GaN FET (MVSG) compact model is a physics-based compact model for Gallium-nitride field-effect transistors (GaN FETs) that includes formulations for currents and charges that can be used for GaN-based circuit simulations, in particular RF- and HV-applications. The model is charge-based and includes the effects of
- Self-consistent channel current and charge
- Source and drain access regions
- Field plate currents and charges with flexible configurations on both source and drain sides.
- Gate leakage
- Channel breakdown
- Bias-dependent fringing field capacitances and layout-dependent gate resistance
- Self-heating effects and thermal coupling
- Charge trapping (gate-lag and drain-lag)
- Gm-dispersion effects
- P-GaN gate stack
- Noise
The MVSG compact device model is an industry-standard supported by the Compact Model Coalition (CMC). Professor Wei is the co-developer of the MVSG compact model, responsible for the model maintenance, upgrade and new feature development.
Model download
Please go to the CMC Standard Model website for information regarding model access. Per CMC's policy, the CMC member companies have access to the latest Standard and Beta models, while the Standard Models are released to the general public for free after 18 months.