Optoelectronic materials and devices

Our current research scope within three-dimensional (3D) optoelectronics has been focused on utilizing nanowires as templates for photovoltaics and sensing in the long wavelength (infrared) region of the light spectrum.

Under this umbrella, our main goals have been to enhance optical and electrical properties of optoelectronic devices by individually addressing these two aspects and translating these improvements unto flexible substrates.

Zinc oxide nanowires

Nanowire Solar Cells

Amorphous silicon nanowire solar cells

We improve light absorption and carrier collection in solar cells by employing 3D nanowire structures as templates- an unprecedented approach for improving performance in electronic devices. This concept becomes vital when working with hydrogenated amorphous silicon (a-Si:H) thin-film materials. Because this material is disordered, the lifetime of generated carriers is low. Thus, efficient methods to quickly collect these carriers and increase the amount of light collected help create efficient devices. Our decision to choose such a disordered thin-film material is due to the associated low-temperature fabrication process that would enable truly flexible optoelectronic devices.

Nanowire IR photodiodes

The task of sensing light in the thermal region of the light spectrum is a difficult one not currently addressed on a large area scale. We aim to develop nanowire-based infrared photodiodes compatible with current large area processing techniques for use in large infrared imaging sensors. To achieve this using thin amorphous silicon films, we are investigating nanowire textured photodiodes which operate on the principle of increased light scattering and absorption in the infrared and increase the effective thickness of our devices. 

If you are interested in collaborating with us on 3-D optoelectronics, contact us.