Publications

2020

Li, Qing; Lee, Czang-Ho; Asad, Mohsen; Wong, William S.; Sachdev, Manoj, "Energy-Efficient Full-Swing Logic Circuits With Unipolar TFTs on Flexible Substrates," IEEE J. Sol. State Circ. (2020).
Iheanacho, B.; Tari, A.; Wong, W.S., "Three-dimensional Radial-Junction ZnO Nanowire/a-Si:H Core-Shell Infrared Photodiodes," Nanotechnology 31, 35LT01 (2020).
Asad M.; Li Q.; Sachdev M.; Wong, W.S., "Thermal and optical properties of high-density GaN micro-LED arrays on flexible substrates, Nano Energy," Nano Energy 73, 104724 (2020).
Li, Qing; Lee, Czang-Ho; Asad, Mohsen; Wong, William S.; Sachdev, Manoj, "CMOS-Like Logic Circuits With Unipolar Thin-Film Transistors on Flexible Substrate," IEEE Trans. Electron Dev. 67, 512-517 (2020).

2019

Asad, Mohsen; Li, Qing; Sachdev, Manoj; Wong, William S., "Size-dependent optoelectrical properties of 365 nm ultraviolet light-emitting diodes," Nanotechnology 30, 504001 (2019).
Asad, M., Wang, R., Ra, Y., Gavirneni, P., Mi, Z., & Wong, W., "Optically invariant InGaN nanowire light-emitting diodes on flexible substrates under mechanical manipulation," npj Flex. Electron. 3, 1-6 (2019).
M. Asad, Q. Li, C-H. Lee, M. Sachdev, and W. S. Wong, “Integration of GaN light-emitting diodes with a-Si:H thin-film transistors for flexible displays,” Nanotechnology 30, 324003 (2019).
Q. Li, C. Lee, M. Asad, W. S. Wong, and M. Sachdev, “A 6-TFT Charge-Transfer Self-Compensating Pixel Circuit for Flexible Displays,” IEEE J. Electron Devices Soc. 7, 792–800 (2019).

2018

A. Tari and W.S. Wong, “Effect of dual-dielectric hydrogen-diffusion barrier layers on the performance of low-temperature processed transparent InGaZnO thin-film transistors,” Appl. Phys. Lett. 112, 7, 73506 (2018).

2017

B. Iheanacho, W.S. Wong, “Infrared optical absorption from hybrid 3-D a-Si:H/ZnO nanowire structures,” J. Appl. Phys. 122, 1, 13102 (2017).
M. K. Pathirane, H.H. Khaligh, I.A. Goldthorpe, W.S Wong, “Al-doped ZnO/Ag-nanowire Composite Electrodes for Flexible 3-Dimensional Nanowire Solar Cells,” Sci. Rep. 7, 8916 (2017).
B. Iheanacho, C-H. Lee, W.S. Wong, “Hybrid ZnO Core-a-Si:H Shell Infrared Photodetectors Integrated With Thin-Film Transistors,” IEEE Electron Dev. Lett. 38, 12, 1688 (2017).
C.H. Lee, N. P. Papadopoulos, M. Sachdev, and W.S. Wong, “Effect of Mechanical Strain on Hydrogenated Amorphous Silicon Thin-Film Transistors and Compensation Circuits on Flexible Substrates,” IEEE Trans. Electron Dev. 64, 5, 2016 (2017).

2016

C.-H. Lee, N. Vardy, and W.S. Wong, “Multilayer MoS₂ Thin-Film Transistors Employing Silicon Nitride and Silicon Oxide Dielectric Layers,” IEEE Electron Dev. Lett. 37, 731 (2016).
M.J. Chow, B. Sun, Y.H. He, M.M. Payne, J.E. Anthony, Y.N. Li, P.M. Levine, and W.S. Wong, “Transistor Sizing for Bias-Stress Instability Compensation in Inkjet-Printed Organic Complementary Inverters,” IEEE Electron Dev. Lett. 37, 11 (2016).
M. Pathirane and W.S. Wong, “Optical and Electrical Characteristics of Hybrid ZnO Nanowire/a-Si:H Solar Cells on Flexible Substrates under Mechanical Bending,” Small 12, 19, 2554 (2016).
N. Dhindsa, J. Walia, M. Pathirane, I. Khodadad, W.S. Wong, and S.S. Saini, “Adjustable optical response of amorphous silicon nanowires integrated with thin films,” Nanotech. 27, 145703 (2016).
Nikolas P. Papadopoulos, Czang-Ho Lee, Alireza Tari, William S. Wong, and Manoj Sachdev "Low-Power Bootstrapped Rail-to-Rail Logic Gates for Thin Film Applications," IEEE/OSA J. Disp. Tech. 12, 12, 1539 (2016).

2015

M. Pathirane, B. Inheanacho, A. Tamang, C.H. Lee, R. Lujan, D. Knipp, and W.S. Wong, “Hybrid ZnO nanowire/a-Si: H thin-film radial junction solar cells using nanoparticle front contacts,” Appl. Phys. Lett. 107, 143903 (2015).
A. Tari and W.S. Wong, “Selective wet-etch processing of optically transparent flexible InGaZnO thin-film transistors,” Appl. Phys. Lett. 107, 023501 (2015).
Alireza Tari, Czang-Ho Lee, and William S. Wong, “Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors,” Appl. Phys. Lett. 107, 193502 (2015).
C.-H. Lee, W.S. Wong, A. Sazonov, A. Nathan, “Study of deposition temperature on high crystallinity nanocrystalline silicon thin films with in-situ hydrogen plasma-passivated grains,” Thin Sol. Films 597, 151 (2015).

2014

Shiva Abbaszadeh, Alireza Tari, William S. Wong, and Karim S. Karim," Enhanced Dark Current Suppression of Amorphous Selenium Detector With Use of IGZO Hole Blocking Layer", IEEE Trans. Electron Dev. 61(9), 6874497, pp. 3355-3357 (2014).
N. Papadopoulos, C.H. Lee, W.S. Wong, “Hybrid Sensor and Display Pixel Circuits for Mobile Near-to-Eye Applications,” IEEE J. Disp. Technol. 10, 574 (2014).
A. Tamang, M. Pathirane, R. Parsons, M.M. Schwarz, B. Inheanacho, V. Jovanov, V. Wagner, W.S. Wong, and D. Knipp, "ZnO nanowire arrays for silicon core/shell solar cells,” Opt. Express, 22, S3, pp. A622-A632 (2014).

2013

M.F. Yang, N.P. Papadopoulos, W.S. Wong, M. Sachdev, “A novel voltage-programmed pixel circuit utilizing V_T dependent charge transfer to improve stability of AMOLED Display,” IEEE J. Disp. Technol., Vol. 9, No. 12, pp. 967-964. (2013).
M.J. Chow, A.A. Fomani, M. Moradi, G. Chaji, R.A. Lujan, and W.S. Wong, “Effects of mechanical strain on amorphous silicon thin-film transistor electrical stability,” Appl. Phys. Lett., Vol. 102, No. 23, 2033509 (2013).

2012

M.F. Yang*, N.P. Papadopoulos, W.S. Wong, M. Sachdev, “A novel 4-TFT pixel circuit with threshold compensation for AMOLED Displays,” IEEE Photonic. Conf., pp. 516-517 (2012).
Invited – W.S. Wong, M.J. Chow, R. Lujan, and T.N. Ng, “Materials, Processing, and Characterization for Printed Flexible Electronics,” ECS Transactions, Vol. 50, No. 8, October 7- 12, 2012, Honolulu, USA, eds. Y. Kuo, ISBN 978-1-62332-007-2 (2012).
M.R. Esmaeili-Rad, N.P. Papadopoulos, M. Bauza, A. Nathan, and W.S. Wong, “Blue-Light-Sensitive Phototransistor for Indirect X-Ray Image Sensors,” IEEE Electron Dev. Lett. 33, pp. 567-569 (2012).

2011

Invited - W.S. Wong, T.N. Ng, M.L. Chabinyc, and S. Sambandan, “Materials, processing, and testing of flexible image sensor arrays,” IEEE Design and Test of Computers 28, pp. 16-22 (2011).
W.S. Wong, S. Raychaudhuri, R. Lujan, S. Sambandan, R.A. Street, “Hybrid Si nanowire/amorphous silicon FETs for Large-area Image Sensor Arrays,” Nano Lett. 11, 6, pp. 2214-2218 (2011).

2009

R.A. Street, W.S. Wong, R. Lujan, “Low-temperature amorphous silicon p-i-n photodiodes,” Phys. Status Solidi B 246, 1854-1857 (2009).
R.A. Street, W.S. Wong, T.N. Ng, R. Lujan, “Amorphous silicon thin film transistor image sensors,” Philos. Mag. 89, 2687-2697 (2009).
R.A. Street, W.S. Wong, R. Lujan, “Curved electronic pixel arrays using a cut and bend approach,” J. Appl. Phys. Lett. 105, 104504 (2009).
R.A. Street, W.S. Wong, C. Paulson, “Analytic Model for Diffuse Reflectivity of Silicon Nanowire Mats,” Nano Lett. 9, 3494-3497 (2009).
S. Sambandan, R.B. Apte, W.S. Wong, R. Lujan, M. Young, B. Russo, S. Ready, R.A. Street, “Defect identification in large area electronic backplanes,” IEEE J. Disp. Tech. 5, 27-33 (2009).
T.N. Ng, W.S. Wong, R.A. Lujan, and R.A. Street, “Characterization of charge collection in photodiodes under mechanical strain: comparison between organic bulk heterojunction and amorphous silicon,” Adv. Mater. 21, 1855 (2009).

2008

P. Qi, W.S. Wong, H. Zhau, D. Wang, “Low-temperature synthesis of Si nanowires using multizone chemical vapor deposition methods”, Appl. Phys. Lett. 93, 163101 (2008).
R.A. Street, P. Qi, R. Lujan, and W.S. Wong, “Reflectivity of disordered silicon nanowires,” Appl. Phys. Lett. 93, 163109 (2008).
T.N. Ng, W.S. Wong, M.L. Chabinyc, S. Sambandan, R.A. Street, “Flexible image sensor array with bulk heterojunction organic photodiode,” Appl. Phys. Lett. 92, 213303 (2008).

2007

T.N. Ng, R.A. Lujan, S. Sambandan, R.A. Street, S. Limb, and W.S. Wong, “Low temperature a-Si:H photodiodes and flexible image sensor arrays patterned by digital lithography,” Appl. Phys. Lett. 91, 063505 (2007).
Invited –W. S. Wong, M. L. Chabinyc, S. Limb, S. E. Ready, R. Lujan, J. Daniel, and R.A. Street, “Digital lithographic processing for large-area electronics,” J. Soc. Inf. Disp. 15, 7, pp. 463-470 (2007).
J.H. Daniel, A.C. Arias, W.S. Wong, R.A. Lujan, S.E. Ready, B.S. Krusor, R.A. Street, “Jet-printed active-matrix backplanes and electrophoretic displays,” Jap. J. Appl. Phys. Part 1 46 (3B), 1363-1369 (2007).

2006

W.S. Wong, E.M. Chow, R. Lujan, V. Geluz-Aguilar, and M.L. Chabinyc, “Fine-feature patterning of self-aligned polymeric thin-film transistors fabricated by digital lithography and electroplating,” Appl. Phys. Lett. 89, 14, p. 142118-1-3 (2006).
R.A. Street, W.S. Wong, S.E. Ready, M.L. Chabinyc, A.C. Arias, S. Limb, A. Salleo, R. Lujan, “Jet printing flexible displays,” Mater. Today 9, 4, p 32-7 (2006).

2005

Invited– W.S. Wong, R. Lujan, J.H. Daniel, S. Limb, “Digital lithography for large-area electronics on flexible substrates,” J. Non-Cryst. Solids 352, 9-20, p. 1981-5 (2005).
A. Salleo, W.S. Wong, M.L. Chabinyc, K.E. Paul, R.A. Street, “Polymer thin-film transistor arrays patterned by stamping,”Adv. Func. Mater. 15, 7, 2005, p 1105-10 (2005).
Invited –M.L. Chabinyc, W.S. Wong, A.C. Arias, S. Ready, R.A. Lujan, J.H. Daniel, B. Krusor, R.B. Apte, A. Salleo, A., R.A. Street, “Printing methods and materials for large-area electronic devices,” Proc. of the IEEE 93, 8, p 1491-9 (2005).

2004

R.A. Street, W.S. Wong, S.E. Ready, R. Lujan, “Printed a-Si:H transistors for large area electronics,” Physica Stat. Sol. C 1, No. 5, 1316 (2004).
Invited –W.S. Wong, K.E. Paul, R.A. Street, “Digital-lithographic processing for thin-film transistor array fabrication,” J. Non-Cryst. Solids 338-340, 710 (2004).
A.C. Arias, S.E. Ready, R. Lujan, W.S. Wong, K.E. Paul, A. Salleo, M.L. Chabinyc, R. Apte, R.A. Street, Y. Wu, P. Liu, B. Ong, “All jet-printed polymer thin-film transistor active-matrix backplanes,” Appl. Phys. Lett. 85, 3304 (2004).

2003

W.S. Wong, S.E. Ready, J.P. Lu, and R.A. Street, “Hydrogenated Thin-film Silicon Transistors and Arrays Fabricated by Digital Lithography,” Electron Dev. Lett. 24, 577 (2003).
M.L. Chabinyc, W.S. Wong, K.E. Paul, and R.A. Street, “Fabrication of Arrays of Organic Polymeric Thin-Film Transistors Using Self-Aligned Microfluidic Channels,” Adv. Mater. 15, 1903-1907 (2003).
K.E. Paul, W.S. Wong, S.E. Ready, and R.A. Street, “Additive Printing of Polymer Thin-film Transistors,” Appl. Phys. Lett. 83, 710 (2003).

2002

M.L. Chabinyc, W.S. Wong, A. Salleo, K.E. Paul, and R.A. Street, “Organic polymeric thin-film transistors fabricated by selective dewetting,” Appl. Phys. Lett. 81, 4260 (2002).
Invited –W.S. Wong, M. Kneissl, D.W. Treat, M. Teepe, N. Miyashita, A. Salleo, and N.M. Johnson, “Continuous-wave InGaN Laser Diodes on Copper and Diamond Substrates,” J. Mater. Res. 17, 890 (2002).
W.S. Wong, S. Ready, R. Matusiak, S.D. White, J.-P. Lu, J. Ho, and R.A. Street, “Jet-printed fabrication of a-Si:H thin-film transistors and arrays,” J. Non-Cryst. Solids 299-302, 1335 (2002).
W.S. Wong, S. Ready, R. Matusiak, S.D. White, J.-P. Lu, J. Ho, and R.A. Street, “Amorphous silicon thin-film transistors and arrays fabricated by jet-printing,” Appl. Phys. Lett. 80, 610 (2002).
Invited –M. Kneissl, W.S. Wong, D.W. Treat, M. Teepe, N. Miyashita, and N.M. Johnson, “CW InGaN multiple-quantum-well laser diodes on copper and diamond substrates by laser lift-off,” Mater. Sci. & Eng. B B93, 68(2002).

2001

M. Kneissl, W.S. Wong, D.W. Treat, M. Teepe, N. Miyashita, N.M. Johnson, “Continuous-wave operation of InGaN multiple-quantum-well laser diodes on copper substrates obtained by laser liftoff,” IEEE J. Sel. Top. Quantum Electron. 7, 188 (2001).
M. Kneissl, W.S. Wong, D.W. Treat, M. Teepe, N. Miyashita, N.M. Johnson, “CW InGaN multiple-quantum-well laser diodes on copper substrates,” Phys. Status Solidi. A 188, 23 (2001).
N. Quitoriano, W.S. Wong, L. Tsakalakos, Y. Cho, T. Sands, “Kinetics of the Pd/In thin-film bilayer reaction: implications for transient-liquid-phase wafer bonding,” J. Electron. Mater. 30, 1371 (2001).
W.S. Wong, M. Kneissl, P. Mei, D.W. Treat, M. Teepe, and N.M. Johnson, “Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrates,” Appl. Phys. Lett. 78, 1198(2001).

2000

W.S. Wong, M. Kneissl, P. Mei, D.W. Treat, M. Teepe, and N.M. Johnson, “The Integration of In_xGa_1-xN Multiple-Quantum-Well Laser Diodes with Copper Substrates by Laser Lift-Off,” Jpn. J. Appl. Phys. 39,L1203 (2000).
E.A. Stach, M. Kelsch, E. C. Nelson, W. S. Wong, T. Sands, and N.W. Cheung, “Structural and chemical characterization of free-standing GaN films separated from sapphire substrates by laser lift-off,” Appl. Phys. Lett. 77, 1819 (2000).
M. Kneissl, D.P. Bour, P. Mei, L.T. Romano, C.G. Van de Walle, J.E. Northrup, W.S. Wong, D.W. Treat, M. Teepe, T. Schmidt, and N.M. Johnson, “Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially overgrown GaN substrates,” Appl. Phys. Lett. 77, 1931 (2000).
W.S. Wong, N.W. Cheung, T. Sands, M. Kneissl, D.P. Bour, P. Mei, L.T. Romano, and N.M. Johnson, “In_xGa_1-xN light-emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off,” Appl. Phys. Lett. 77, 2822 (2000).

1999

P. Perlin, L. Mattos, N.A. Shapiro, J. Krüger, W.S. Wong, T. Sands, N.W. Cheung, and E.R. Weber, “Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate,” J. Appl. Phys. 84, 2385 (1999).
K.M. Yu, W. Shan, C.J. Glover, M.C. Ridgway, W.S. Wong, and W. Yang, “Local structures of free-standing Al_xGa_1-xN thin films studied by extended x-ray absorption fine structure,” Appl. Phys. Lett. 75, 4097 (1999).
W.S. Wong, A.B. Wengrow, Y. Cho,A. Salleo,N.J. Quitoriano,N.W. Cheung, and T. Sands, “Integration of GaN thin films with dissimilar substrate materials by Pd-In metal bonding and laser lift-off,” J. Electron. Mater. 28,1409 (1999).
W.S. Wong, K.M. Yu, A.B Wengrow, J. Krüger, E.R. Weber, N.W. Cheung, and T. Sands, “Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off,” Appl. Phys. Lett. 75, 1887 (1999).
W.S. Wong, N.W. Cheung, T. Sands, M. Kneissl, D.P. Bour, P. Mei, L.T. Romano, and N.M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75, 1360 (1999).

1998

G.S. Sudhir, H. Fujii, W.S. Wong, C. Kisielowski, N. Newman, C. Dieker, Z. Liliental-Weber, M. D. Rubin, and E. R. Weber, “Pulsed laser deposition of aluminum nitride and gallium nitride thin films,” Appl. Surf. Sci. 127, 472 (1998)
G S. Sudhir, H. Fujii, W.S. Wong, C. Kisielowski, N. Newman, C. Dieker, Z. Liliental-Weber, M. D. Rubin, and E. R. Weber,“Control of the structure and surface morphology of gallium nitride and aluminum nitride thin films by nitrogen background pressure in pulsed laser deposition,” J. Electron. Mater. 27, No. 4, 215 (1998).
W.S. Wong, T. Sands, and N.W. Cheung, “Damage-free separation of GaN thin films from sapphire substrates,” Appl. Phys. Lett. 72, 599(1998).

1996

J.S. Chan, L.F. Schloss, E. Jones, W.S. Wong, A. Gassmann, E.R. Weber, M.D. Rubin and N.W. Cheung “Thermal annealing characteristics of Si and Mg-implanted GaN thin films,” Appl. Phys. Lett. 68, 2702 (1996).
H.K. Dong, N. Y. Li, W.S. Wong, and C.W. Tu, “Growth, doping, and etching of GaAs and InGaAs using tris-dimethylaminoarsenic,” J. Vac. Sci. Technol. B 51, 159 (1996).
N.Y. Li, H. K. Dong, W.S. Wong, and C.W. Tu, “An evaluation of alternative precursors in chemical beam epitaxy: tris-dimethylaminoarsenic, tris-dimethylaminophosphorus, tertiarybutylphosphine,” J. Cryst. Growth 164, 112 (1996).
N.Y. Li, W.S. Wong, D.H. Tomich, H.K. Dong, and C.W. Tu, “Growth study of chemical beam epitaxy of GaN_xP_1-x using NH₃ with tertiarybutylphosphine,” J. Cryst. Growth 164, 180 (1996).
N.Y. Li, W.S. Wong, D.H. Tomich, K.L. Kavanagh, and C.W. Tu, “Study of strain relaxation in GaN_xP_1-x (x,” J. Vac. Sci. Technol. B14, 2952 (1996).
W.S. Wong,N.Y. Li, H.K. Dong, F. Deng, S.S. Lau, and C.W. Tu, “Growth of GaN by gas-source molecular beam epitaxy by ammonia and by plasma generated nitrogen radicals,” J. Cryst. Growth 164, 159 (1996).

Refereed Conference Proceedings

Qing Li; Czang-Ho Lee; William S. Wong; Manoj Sachdev, “Realization of an Energy-Efficient, Full-Swing Decoder with Unipolar TFT Technology,” IEEE Custom Integrated Circuits Conference (CICC), March 22-25, 2020, Boston (2020)
Nouri, M; Wong, W.S., “Fabrication of multilayer MoS2 field-effect transistor arrays using a modified exfoliation method,” 62nd Electronic Materials Conference, University of Michigan, Ann Arbor, MI, June 24, 2020 (2020)
Zheng, Z.; Kim, N.; Wang, J. Wong, W.S., Yeow, J.T.W., “Inkjet-Printed Capacitive Micromachined Ultrasonic Transducer (CMUT) for Moisture Sensing,” 2020 IEEE 15th International Conference on Nano/Micro Engineered and Molecular System (NEMS), San Diego, CA (2020)
Hyunwoo Choi, Wontae Park, Naeun Kim, William S. Wong, “MoS2 suspended in polythiophene semiconductor solutions for inkjet-printed thin-film transistor device fabrication”, 62nd Electronic Materials Conference, University of Michigan, Ann Arbor, MI, June 24, 2020 (2020)
Invited Keynote – Wong, W.S., “Flexible electronics through heterogeneous integration of thin-film and nano-scale materials,” Canadian Printed Electronics Symposium 2019 (CPES2019), May 16-17, 2019, Bromont, QC (2019)
Mohsen Asad; Qing Li; Czang-Ho Lee; Manoj Sachdev; William Wong, “Heterogeneous Integration of InGaN Micro-LEDs with a:Si TFT Arrays on Flexible Substrates,” IEEE International Flexible Electronics Technology Conference (IFETC), August 11-14, 2019, Vancouver, BC (2019)
Qing Li; Mahdi Elghazali; Czang-Ho Lee; Mohsen Asad; Manoj Sachdev; William Wong, “TFT Adder Design on Flexible Substrate,” IEEE International Flexible Electronics Technology Conference 2019 (IFETC2019), Vancouver, BC (2019)
Nouri, M.; Asad, M.; Wong, W.S., Fabrication of thin-film transistors using large-area exfoliation of single-crystal MoS2 layers and inkjet-printing, IEEE International Flexible Electronics Technology Conference 2019 (IFETC2019), August 11-14, 2019, Vancouver, BC (2019)
Kim, N.; Choi, H; W.S. Wong, “Inkjet Printed Assembly and Electrical Characteristics of Thin-Film Transistors with Hybrid MoS2-P3HT Semiconductor Layers,” IEEE International Flexible Electronics Technology Conference 2019 (IFETC2019), August 11-14, 2019, Vancouver, BC (2019)
Mohsen Asad; Qing Li; Czang-Ho Lee; Manoj Sachdev; William Wong, “Heterogeneous Integration of InGaN Micro-LEDs with a:Si TFT Arrays on Flexible Substrates,” IEEE International Flexible Electronics Technology Conference 2019 (IFETC2019), August 11-14, 2019, Vancouver, BC (2019)
Mohsen Asad; Qing Li; Manoj Sachdev; William Wong, “Integration of GaN Micro-LED Arrays onto Plastic Substrates for Flexible Display Applications,” International Meeting on Information Display (IMID) 2019, August 27-30, 2019, Gyeongju, South Korea (2019)
Invited – W.S. Wong, “Flexible micro-LED displays through heterogeneous integration of thin-film transistors and III-V optoelectronic devices,” 15th China International Solid-state Lighting Forum (SSLCHINA 2018) and the 2018 International Third Generation Semiconductor Forum (IFWS 2018), October 23-25, 2018, Shenzhen, China (2018).
Q. Li, C.-H. Lee, M. Asad, M. Sachdev, and W.S. Wong, “Operation and control of flexible display pixel circuits under mechanical bending,” 2018 IEEE Int. Flex. Electron. Technol. Conf. 1–4, August 7 – 9, 2018, Ottawa, Canada (2018).
Invited – W.S. Wong, “Electrical and Optical Characteristics of Nanowire LEDs Under Mechanical Bending,” Workshop on Innovative Nanoscale Devices and Systems (WINDS), November 26 – December 1, 2017, Kona, U.S.A. (2017).
Invited – W.S. Wong, “Considerations for Large-Area Flexible Displays from Thin-Film to Nano-Scale Devices,” International Meeting on Information Display, August 28-31, 2017, Buson, South Korea (2017).
Invited – W.S. Wong, “Flexible electronics through heterogeneous integration of thin-film and nano-scale materials,” Korea-Japan Joint Forum International Conference on Organic Materials for Electronic and Photonics, August 30-September 2, 2017, Gwangju Institute of Science and Technology, Gwangju, South Korea (2017).
Maofeng Yang*, Nikolas P. Papadopoulos**, Czang-Ho Lee**, William S. Wong, Manoj Sachdev, “A Novel Voltage-Programmed Pixel Circuit with Vt-Shift Compensation for AMOLED Displays,” IEEE Custom Integrated Circuit Conference (CICC), pp 1-4. (2013)
B. Liu, M.A. McCarthy, B. Iheanacho*, W.S. Wong, A.G. Rinzler, “Recent developments of carbon nanotube enabled vertical organic light-emitting transistors for OLED displays,” Society for Information Display, Symposium Digest of Technical Papers, Vol. 44, No. 1, pp. 251-253 (2013).
Nikolas P. Papadopoulos**, Maofeng Yang*, Mohammad R. Esmaeili-Rad**, Manoj Sachdev, and William S. Wong, “Discussing Pixel Circuits for Hybrid Sensor and Display Pixel Arrays,” 2012 International Display Workshops in conjunction with Asia Display (IDW/AD 2012), pp. 1541-1543, Kyoto, Japan, December 4-7, 2012.
Maofeng Yang*, Nikolas P. Papadopoulos**, William S. Wong, and Manoj Sachdev, “A Novel 4-TFT Pixel Circuit with Threshold Voltage Compensation for AMOLED Displays,” Proceedings for the 2012 IEEE Photonics Conference (IPC), pp. 516-517, San Francisco, September 23-27, 2012.
T.N. Ng**, W.S. Wong, R.A. Lujan, B. Russo, M.L. Chabinyc, S. Sambandan, R.A. Street, “Characterization of flexible image sensor arrays with bulk heterojunction organic photodiodes,”Proc. SPIE – Int. Soc Opt. Eng., 7054, 70541M-1-6 (2008).
W.S. Wong, T.N. Ng**, M.L. Chabinyc, R.A. Lujan, R.B. Apte, S. Sambandan, S. Limb, and R.A. Street, “Flexible a-Si:H-based image sensors fabricated by digital lithography,” Mater. Res. Soc. Symp. Proc. 989, 0989-A09-03 (2007).
S.E. Ready, W.S. Wong, A. Arias, A. Salleo, R.B. Apte, M.L. Chabinyc, R.A. Street, “Toolset for printed electronics,” Digital Fabrication 2006. Final Program and Proc., p 17-20 (2006).
R.A. Street, W.S. Wong, S.E. Ready, R. Lujan, A.C. Arias, R. Apte, “Jet-printing of active-matrix TFT backplanes for displays and sensors,” Digital Fabrication 2005. Final Program and Proceedings, p 13-16 (2005).
W.S. Wong, R. Lujan, S.E. Ready, M.L. Chabinyc, A.C. Arias, R.A. Street, “Digital lithography for thin-film transistor fabrication,” Device Research Conference (IEEE Cat. No.04TH8724), pt. 1, p 225-6 vol.1 (2004).
K.E. Paul, W.S. Wong, and S.E. Ready, “Effective jet printing of organic semiconducting polymers,” Mater. Res. Soc. Symp. Proc. 769, H.5.4.1 (2003).
E.A. Stach, W.S. Wong, M. Kneissl and T. Sands, “Defect formation via thermal decomposition in GaN,” Proc. of the 4th Symposium on Non-Stoichiometric III-V Compounds, Asilomar, CA, 2002.
W.S. Wong, M. Kneissl, P. Mei, D.W. Treat, M. Teepe, and N.M. Johnson, “Integration of In_xGa_1-xN laser diodes with dissimilar substrates by laser lift-off,” GaN and Related Alloys – 2000, Symposium, Mater. Res. Soc. Symp. Proc. 639, G12.2.1 (2001).
Invited –M. Kneissl, W.S. Wong, C.G. Van de Walle, J.E. Northrup, D.W. Treat, M. Teepe, N. Miyashita, P. Kiesel, N.M. Johnson, “Performance characteristics of cw InGaN multiple-quantum-well laser diodes,” GaN and Related Alloys – 2000 Symposium, Mater. Res. Soc. Symp. Proc. 639, G10.6.1 (2001).
E.A. Stach, C.F. Kisielowski, W.S. Wong, T. Sands, and N.W. Cheung, “Real time observation and characterization of dislocation motion, nitrogen desorption and nanopipe formation in GaN,” Wide-Bandgap Electronic Devices Symposium, Mater. Res. Soc. Symp. Proc. 622, T5.8.1 (2001).
E. A. Stach, C.F. Kisielowski, W.S. Wong, T. Sands and N.W. Cheung, “Real time observation and characterization of dislocation motion, nitrogen desorption and nanopipe formation in GaN,” in Wide Band Gap Electronic Devices, ed. R.J. Shul, F. Ren, W. Pletschen, M. Murakami, vol. 622, Proc. Mater. Res. Soc., Warrendale, PA p. 27-35, 2000
E.A. Stach, M. Kelsch, W.S. Wong, E.C. Nelson, T. Sands, N.W. Cheung, “Structural characterization of laser lift-off GaN,” Laser-Solid Interactions for Materials Processing Symposium, Mater. Res. Soc. Symp. Proc. 617, J3.5.1 (2000).
M. Kneissl, L.T. Romano, C.G. Van de Walle, J.E. Northrup, W.S. Wong, D.W. Treat, M. Teepe, N. Miyashita, N.M. Johnson, “Advances in blue laser diode development for high resolution printing,” Proc. of Int. Workshop on Nitride Semicond., 903 (2000).
Invited –W.S. Wong, M. Kneissl, P. Mei, D.W. Treat, M. Teepe, and N.M. Johnson, “Ubiquitous blue light: The integration of InGaN-based optoelectronics with dissimilar substrates by wafer bonding and laser lift-off,” Proc. of the IEEE Twenty-Seventh Int. Symp. on Compound Semicond., p. 125 (2000).
J. Krueger, N. Shapiro, S. Subramanya, Y. Kim, H. Siegle, W.S. Wong, T. Sands, N.W. Cheung, and R.J. Molnar, “The Influence of the Sapphire Substrate on Temperature Dependence of the GaN Bandgap,” Mat. Res. Soc. Symp. Proc. 572, 289 (1999).
W.S. Wong, L.F. Schloss, Sudhir G.S., K.M. Yu, E.R. Weber, T.D. Sands, and N.W. Cheung, “Pulsed excimer laser processing of AlN/GaN thin films,”Mat. Res. Soc. Symp. Proc. 449, 1011 (1997).
N.Y. Li, D.H. Tomich, W.S. Wong, J. S. Solomon, and C.W. Tu, “Chemical beam epitaxy of GaN_xP_1-x using a N radical plasma source,” Mater. Res. Soc. Symp. 423, 317 (1996).

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