Ho Sung Kim worked as a Postdoctoral Fellow in the QNC-MBE Group from April 2018 to February 2020. He focused on molecular beam epitaxial (MBE) growth and fabrication of GaAs/AlGaAs structures for lateral gated p-n junctions for single-electron injectors and high fluency quantum light emission while working in the group. He is now a Researcher at the Electronic and Telecommunications Research Institute in Korea.
