2014 witnessed the first phase of establishing the advanced III-V semiconductors Molecular Beam Epitaxy (MBE) facility in the newly erected Lazaridis Quantum-Nano Centre (QNC) of the University of Waterloo. The state-of-the-art 1200 ft2 MBE laboratory is located in the shared cluster of QNC laboratories, in recognition of its future pivotal role in a number of programs hosted by the Waterloo Institute for Nanotechnology (WIN) and the Institute for Quantum Computing (IQC). Successful implementation of this first phase was possible thanks to
- Portion of the 2006 CFI Leading Edge Fund “From Nano Structures to Quantum Information Processing: A Technology Incubator for the 21st Century”,
- Start-up fund awarded to the PI
- NSERC Discovery and RTI grants awarded to the PI,
- Endowment funds awarded to the PI and
- Contribution of the University towards the preparation of the lab infrastructure.
After one year of installation and fit-out activities, the QNC-MBE facility was officially opened in June 2014 in a ceremony marked by the UWaterloo Vice-President - University Research Prof. George Dixon, WIN Director Prof. Arthur Carthy, former Dean of Engineering Prof. Adel Sedra, ECE Prof. Dayan Ban, and other key players in the establishment of the MBE lab for compound semiconductors. Tom Foxon, Emeritus Professor in the School of Physics and Astronomy at the University of Nottingham and one of the world key MBE scientists for over 45 years, also visited the facility during the occasion. When speaking about the new MBE laboratory in the Quantum Nano Centre, Prof. Foxon said:
Artificial III-IV semiconductors can be grown by MBE with absolute precision control of both composition and thickness and this is what Zbig has done supremely well for the quantum cascade lasers... and will result, I am absolutely certain, in some exciting developments here at Waterloo.
Our research is inherently collaborative. Our projects are shared with groups from different UWaterloo departments, other universities and research centres. In the core of this research model are our students, providing the link between the many stages of structure preparation, characterization, and device fabrication.
Emerging applications and devices such as single photon emitters, coherent light sources and sensors spanning the entire spectral region from UV to far-infrared (THz), photonic crystals and metamaterials, advanced lab-on-a-chip nano-systems, spintronic devices and quantum computers rely on sophisticated material engineering at atomic level, possible only with advanced deposition and processing technologies. Driven by these needs, our research efforts concentrate in:
- Understanding and optimization of interfaces at the atomic scale:
- GaAs/AlGaAs, InAs/AlAs, InGaAs/GaAsSb material systems
- Understanding the role of interfaces in resonant tunneling processes