Prof. Wasilewski received his M.Sc. degree in Physics from the University of Warsaw, Poland, and subsequently joined the Semiconductor Physics Research Group at the Institute of High Pressure Physics, where he worked until 1986. During that period, he focused primarily on low-temperature magneto-optical studies of semiconductors under high hydrostatic pressures (up to 25,000 atmospheres). Much of this research he conducted in Professor R.A. Stradling's Laboratories in the Physics Department, University of St. Andrews, Scotland. He earned his doctoral degree from the Institute of Physics of the Polish Academy of Sciences in 1986. In 1988, after a post-doctoral appointment at the Imperial College, London, where he expanded his work to other material systems and nanostructures, he joined the National Research Council of Canada (NRC), shifting his research focus to molecular beam epitaxial growth and characterization of quantum structures and devices based on III–V semiconductor compounds. In 2006, Prof. Wasilewski was promoted to a Principal Research Officer level – NRC’s top research rank. Six years later, in July 2012, he joined the University of Waterloo as a full Professor and the University of Waterloo Endowed Chair in Nanotechnology. The same year, in recognition of his exceptional track record and international research standing as well as his role in developing the field of GaN-based optoelectronics in Poland, he was awarded the title of Professor of Physics by the President of Poland. Prof. Wasilewski is a co-author of more than 500 refereed journal and conference proceedings articles with over 16,000 citations to his work (h-index of 64 and i10‑index of 248 – Google Scholar, 2023).