Functional Materials for Memristors, Metal-Insulator-Metal (MIM) Tunneling Diodes and Field Effect Transistors (FET)
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".
Deadline for manuscript submissions: 20 December 2025
Dear Colleagues,
This Special Issue focuses on the functionalization, via emerging materials, fabrication, and testing of THz tunnelling MIM diodes, memristors, and FETs. Applications ranging from telecommunication, to sensing and 3D imaging (such as that using neuromorphic chips), to non-volatile information storage and processing are also highlighted.
Recently, memristors made from 2D materials have gained enormous attention. These materials offer advantages such as a low switching voltage, reduced power consumption due to an ultrathin body, and an absence of dangling bonds that can cause scalability issues with ultrathin oxides. The choice of insulating material is crucial for MIM tunneling diodes and FETs. Recently, 2D insulating and semiconducting materials, respectively, have been used for designing and simulating MIM tunneling diodes and FETs. Thus, functional materials play a crucial role in the performance and behavior of these electronic components, impacting their applications and scalability.
Prof. Dr. Mustafa Yavuz
Guest Editor