QNC-MBE Facility

Veeco GEN10 MBE system installed in QNC
Design, grow, and characterize advanced III–V semiconductor heterostructures with atomic precision using state-of-the-art MBE facilities.
Close up of cluster tool and robot
Where automation meets atomic precision: the GEN10 cluster module robot.
Prof. Wasilewski discussing science with one of his students
Train in atomic-scale MBE growth under world-class mentorship, contributing to real quantum technologies from day one.
HRXRD for wafer analysis
Fully automated, high-resolution X-ray diffraction system supporting both routine materials characterization and advanced structural studies
Close up of cluster tool and robot
Hands-free, automated wafer transfer inside the cluster tool—supporting precision and repeatability.


Welcome to QNC-MBE Facility and Zbig's Molecular Beam Epitaxy (MBE) research group. We aim to grow the most advanced III-V compound semiconductor nanostructures that will enable the technologies of the future. Please navigate through the left side bar to get to know us better.

Zbigniew Wasilewski

Professor, Research Chair in Nanotechnology, and Director of the QNC-MBE Facility

Dr. Zbigniew (Zbig) Wasilewski is internationally renowned for his contributions to molecular beam epitaxy (MBE) and to the development of quantum-dot and quantum-well photonic devices, including terahertz quantum cascade lasers (QCLs). His work also spans quantum structures and devices based on high-mobility two-dimensional electron gases, such as lateral few-electron quantum dot circuits—potential building blocks for future quantum computers.

News

Monday, November 21, 2022

Electrical and computer engineering professor, Dr. Zbigniew (Zbig) Wasilewski, named IEEE Fellow

Dr. Zbigniew (Zbig) Wasilewski, a professor and Director of the QNC-MBE Facility in the Department of Electrical and Computer Engineering (ECE), has been elevated to Fellow of the Institute of Electrical and Electronics Engineers (IEEE). This prestigious distinction recognizes his outstanding contributions to molecular beam epitaxy (MBE) growth technology and photonic devices.

The grade of IEEE Fellow is reserved for a select group of IEEE members whose extraordinary accomplishments have made a lasting impact across IEEE fields of interest.

Monday, November 2, 2020

The Molecular Beam Epitaxy (MBE) Research Group sets a new world record with portable terahertz quantum cascade laser

The Molecular Beam Epitaxy (MBE) Research Group has achieved a world‑record milestone in terahertz laser technology, demonstrating a compact and portable terahertz quantum cascade laser (THz QCL) capable of operating at unprecedented high temperatures — a development that could transform how terahertz radiation is used outside the lab.

The breakthrough was accomplished in collaboration with Professor Qing Hu’s research group at the Massachusetts Institute of Technology (MIT)

"Many authorities in the field didn't believe these devices could work outside a laboratory environment or anywhere close to room temperature,” said Zbig Wasilewski, a physicist and professor of electrical and computer engineering at Waterloo and a principal investigator at Transformative Quantum Technologies. “Our combined expertise just changed this paradigm.”

Wednesday, September 25, 2019

Professor Zbig Wasilewski won the 2019 MBE Innovator Award

Professor Zbig Wasilewski, the Principal Investigator (PI) of the QNC-MBE group, has been awarded the MBE Innovator Award at the 35th North American Conference on Molecular Beam Epitaxy (NAMBE 2019) in Ketchum, USA. The MBE Innovator Award is to recognize individuals whose innovative work has significantly advanced the field of MBE. Prof. Wasilewski was honored

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