Zbig Wasilewski

Zbig Wasilewski is an Electrical and Computer Engineering Professor cross-appointed to the Department of Physics and Astronomy at the University of Waterloo. He is internationally renowned for his contributions to the field of Molecular Beam Epitaxy, quantum-dot and quantum-well photonic devices, as well as quantum structures and devices based on high mobility 2D electron gases.
Professor Wasilewski’s research interests include Molecular Beam Epitaxy (MBE) and nanofabrication of III-V semiconductor structures for quantum optics, nano-photonics, nano-electronics and quantum computing applications. The MBE laboratory, led by Professor Wasilewski, has demonstrated the world’s highest operating temperatures for GaAs/AlGaAs-based THz Quantum Cascade Lasers. These devices are among the most complex man-made quantum structures. In addition, the MBE laboratory also originally developed the In-flush method, which is the best technique for creating and fine-tuning MBE-grown InAs/GaAs quantum dots (QDs) systems.

Professor Wasilewski is a co-author of over 500 refereed journal articles and conference proceedings with some of the highest citation records in the field (over 16,000 citations to his work with an h-index of 64). In 2012, Professor Wasilewski was awarded the life title of Professor of Physics by the President of Poland in recognition of his exceptional track record of international standing research and his role in developing the field of GaN-based optoelectronics in Poland. In 2022, he was elevated to Fellow of the IEEE.

• Sensors and devices, Nano-electronics, Nano-materials, Photonics, Molecular Beam Epitaxy, Nanofabrication, Nanotechnology, Self-assembled nanostructures, Quantum Cascade Lasers and related devices, Advanced Manufacturing

• 1986, Doctorate Physics, Polish Academy of Sciences, Poland
• 1979, Master of Science Physics, University of Warsaw, Poland
• 1978, Bachelor of Science (BSc) Physics, University of Warsaw, Poland

• NANO 701 - Fundamentals of Nanotechnology
  • Taught in 2018, 2020, 2021
• NANO 702 - Nanotechnology Tools
  • Taught in 2018, 2020, 2021
• NE 102 - Introduction to Nanomaterials Health Risk; Nanotechnology Engineering Practice
  • Taught in 2022
• NE 201 - Nanotoxicology; Nanotechnology Engineering Practice
  • Taught in 2022
• NE 202 - Nanomaterials and Environmental Impact; Nanotechnology Engineering Practice
  • Taught in 2022
• NE 345 - Photonic Materials and Devices
  • Taught in 2023
• NE 471 - Nano-electronics
  • Taught in 2019, 2020

* Only courses taught in the past 5 years are displayed.

• A. Khalatpour, M. C. Tam, S. J. Addamane, J. Reno, Z. Wasilewski, and Q. Hu, "Enhanced operating temperature in terahertz quantum cascade lasers based on direct phonon depopulation", Applied Physics Letters 122, 161101 (2023).
• P. Goulain, C. Deimert, M. Jeannin, S. Pirotta, W. J. Pasek, Z. Wasilewski, R. Colombelli, and J.-M. Manceau, "THz Ultra-Strong Light–Matter Coupling up to 200 K with Continuously-Graded Parabolic Quantum Wells", Advanced Optical Materials n/a, 2202724 (2023).
• E. A. Bergeron, F. Sfigakis, Y. Shi, G. Nichols, P. C. Klipstein, A. Elbaroudy, S. M. Walker, Z. R. Wasilewski, and J. Baugh, "Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells", Applied Physics Letters 122, 012103 (2023).
• B. Tekcan, B. van Kasteren, S. V. Grayli, D. Shen, M. C. Tam, D. Ban, Z. Wasilewski, A. W. Tsen, and M. E. Reimer, "Semiconductor nanowire metamaterial for broadband near-unity absorption", Scientific Reports 12, 9663 (2022).
• A. Shetty, F. Sfigakis, W. Y. Mak, K. Das Gupta, B. Buonacorsi, M. C. Tam, H. S. Kim, I. Farrer, A. F. Croxall, H. E. Beere, A. R. Hamilton, M. Pepper, D. G. Austing, S. A. Studenikin, A. Sachrajda, M. E. Reimer, Z. R. Wasilewski, D. A. Ritchie, and J. Baugh, "Effects of biased and unbiased illuminations on two-dimensional electron gases in dopant-free GaAs/AlGaAs", Physical Review B 105, 075302, 1-16 (2022).
• I. Sadeghi, A. Pofelski, H. Farkhondeh, N. Fernández-Delgado, M. C. Tam, K. T. Leung, G. A. Botton, and Z. R. Wasilewski, "Atomically Smooth Defect-Free III-As Heterostructures on InP(111) Substrate for Next-Generation Electronic Devices", ACS Applied Nano Materials (2022).
• M. D. Rezeq, Y. Abbas, B. Wen, Z. Wasilewski, and D. Ban, "Direct detection of electronic states for individual indium arsenide (InAs) quantum dots grown by molecular beam epitaxy", Applied Surface Science 590, 153046 (2022).
• W. J. Pasek, C. Deimert, P. Goulain, J.-M. Manceau, R. Colombelli, and Z. R. Wasilewski, "Multisubband plasmons: Beyond the parabolicity in the semiclassical model", Physical Review B 106, 115303 (2022).
• A. Khalatpour, A. K. Paulsen, S. J. Addamane, C. Deimert, J. L. Reno, Z. R. Wasilewski, and Q. Hu, "A Tunable Unidirectional Source for GUSTO’s Local Oscillator at 4.74 THz", IEEE Transactions on Terahertz Science and Technology 12, 144-150 (2022).
• A. Khalatpour, A. K. Paulsen, C. Deimert, Z. R. Wasilewski, and Q. Hu, "High-power portable terahertz laser systems", Nature Photonics 15, 16-20 (2021).
• C. Deimert and Z. R. Wasilewski, "Precise control of time-varying effusion cell flux in molecular beam epitaxy", Journal of Vacuum Science & Technology A 39, 043407 (2021).
• B. Buonacorsi, F. Sfigakis, A. Shetty, M. C. Tam, H. S. Kim, S. R. Harrigan, F. Hohls, M. E. Reimer, Z. R. Wasilewski, and J. Baugh, "Non-adiabatic single-electron pumps in a dopant-free GaAs/AlGaAs 2DEG", Applied Physics Letters 119, 114001, 1-7 (2021).
• M. N. Beattie, C. E. Valdivia, M. M. Wilkins, M. Zamiri, K. L. C. Kaller, M. C. Tam, H. S. Kim, J. J. Krich, Z. R. Wasilewski, and K. Hinzer, "High current density tunnel diodes for multi-junction photovoltaic devices on InP substrates", Applied Physics Letters 118, 062101 (2021).
• B. Wen, C. Deimert, S. Wang, C. Xu, S. S. Rassel, Z. Wasilewski, and D. Ban, "Six-level hybrid extraction/injection scheme terahertz quantum cascade laser with suppressed thermally activated carrier leakage", Optics Express 28, 26508 (2020).
• C. Deimert, P. Goulain, J. M. Manceau, W. Pasek, T. Yoon, A. Bousseksou, N. Y. Kim, R. Colombelli, and Z. R. Wasilewski, "Realization of Harmonic Oscillator Arrays with Graded Semiconductor Quantum Wells", Physical Review Letters 125, 097403 (2020).
• Y. Shi, E. Bergeron, F. Sfigakis, J. Baugh, and Z. R. Wasilewski, "Hillock-free and atomically smooth InSb QWs grown on GaAs substrates by MBE", Journal of Crystal Growth 513, 15-19 (2019).
• I. Sadeghi, M. C. Tam, and Z. R. Wasilewski, "On the optimum off-cut angle for the growth on InP(111)B substrates by molecular beam epitaxy", Journal of Vacuum Science & Technology B 37, 031210 (2019).
• Y. Hu, M. C. Tam, and Z. R. Wasilewski, "Unintentional As incorporation into AlSb and interfacial layers within InAs/AlSb superlattices", Journal of Vacuum Science & Technology B 37, 032902-1 032902-5 (2019).
• C. Deimert and Z. R. Wasilewski, "MBE growth of continuously-graded parabolic quantum well arrays in AlGaAs", Journal of Crystal Growth 514, 103-108 (2019).
• Y. Shi, D. Gosselink, V. Y. Umansky, J. L. Weyher, and Z. R. Wasilewski, "Threading dislocations in MBE grown AlInSb metamorphic buffers: Revealed and counted", Journal of Vacuum Science & Technology B, 35, 02B112 (2017).
• Y. Shi, D. Gosselink, K. Gharavi, J. Baugh, and Z. R. Wasilewski, "Optimization of metamorphic buffers for MBE growth of high quality AlInSb/InSb quantum structures: Suppression of hillock formation", Journal of Crystal Growth 477, 7-11 (2017).
• J. Tournet, D. Gosselink, G. X. Miao, M. Jaikissoon, D. Langenberg, T. G. McConkey, M. Mariantoni, and Z. R. Wasilewski, "Growth and characterization of epitaxial aluminum layers on gallium-arsenide substrates for superconducting quantum bits", Superconductor Science and Technology 29, 064004 (2016).

• Laser device goes portable