LPCVD LTO [TYSTAR4-LTO]

Vendor: TYSTAR

Model: Tytan 4600 mini fourstack horizontal furnace

Purpose: Low temperature oxide and doped oxide deposition via low pressure chemical vapor deposition (LPCVD)

Equipment wiki link

Equipment description:

Tube #4 of the Tystar furnace stack is dedicated to growing low temperature SiO₂ (LTO) and doped SiO₂ (DLTO) films via low pressure chemical vapor deposition (LPCVD). This tube is capable of processing up to 26 wafers with processing temperature of 400-450°C. Uniformity for a 500 nm LTO film should be 5% within wafer, 5% wafer to wafer, and 5% run to run. Uniformity for a 500 nm DLTO film should be 5% within wafer, 10% wafer to wafer (across load), and 5% run to run.

Commissioned processes:

• Low temperature SiO₂ (LTO)
• Doped low temperature SiO₂ (DLTO)

Gases currently available on this system:

• N₂
• 15% PH₃ / 85% SiH₄
• O₂
• SiH₄

Additional information:

• This system is configured to handle 100 mm wafers with typical thickness of 550 μm (approx). Processes are not commissioned for other wafer sizes.
• Photoresist-coated wafers are strictly prohibited since the system supports high temperature processes which are not compatible with photoresist films