LPCVD silicon nitride [TYSTAR2-nitride]

Vendor: TYSTAR

Model: Tytan 4600 minifourstack horizontal furnace

Purpose: Low stress silicon nitride deposition via low pressure chemical vapor deposition (LPCVD)

Equipment wiki link

Equipment description

Tube #2 of the Tystar furnace stack is dedicated to growing stoichiometric or low stress Si₃N₄ by low pressure chemical vapor deposition (LPCVD). This tube is capable of processing up to 50 wafers with an upper temperature limit of 900°C. Uniformity for a stoichiometric 200 nm Si₃N₄ film should be 3% within wafer, 3% wafer to wafer, and 3% run to run. Uniformity for a 200 nm low stress Si₃N₄ film should be 5% within wafer, 10% wafer to wafer, and 5% run to run with a stress of approximately 300 MPa.

Commissioned processes:

• Stoichiometric silicon nitride (Si₃N₄)
• Low stress silicon nitride (Si-rich Si₃N₄)

Gases currently available on this system:

• N₂

• NH₃

• SiH₂Cl₂

Additional information:

• This system is configured to handle 100 mm wafers with typical thickness of 550 μm (approx).  Processes are not commissioned for other wafer sizes.
• Photoresist-coated wafers are strictly prohibited since the system supports high temperature processes which are not compatible with photoresist films