RIE: deep Si [OXFORD-SiRIE]

Vendor: Oxford Instruments

Model: Plasmalab system 100 ICP380

Purpose: Plasma-based dry etching of silicon 

Equipment wiki link

Equipment description:

This Oxford Plasmalab100 is an inductively coupled plasma system (ICP) that is configured for deep reactive ion etching (DRIE) of silicon using the patented Bosch process. The system is equipped with He backside cooling and has a temperature controlled electrode. The ICP process module is connected to a single automated wafer transfer load lock. For more information about available processes and disallowed processes, please consult the equipment wiki page.

System features and options:

  • Gases available: SF6, C4F8, O2
  • Standard configuration to handle 4″ Si wafers. 6″ wafer process available upon request
  • Mechanical clamp
  • High density 380 mm ICP Source (2 MHz, 3 kW)
  • 240 mm lower electrode (13.56 MHz, 300 W)
  • Standard chuck temperature: 15℃
  • Typical operating pressure: 1 –100 mTorr
  • Low frequency (340 kHz) biasing and pulsing to suppress notching effect
Oxford Deep Reactive Ion Etching system

Oxford DRIE system

Aspect ratio dependant effect

ARDE

10 µm pillar

10 µm pillar

QNFCF logo etched 100 µm deep into Si

QNFCF logo etched 100 µm deep into Si

Oxford Deep Reactive Ion Etching system
1 / 4
Oxford DRIE system
Aspect ratio dependant effect
2 / 4
ARDE
10 µm pillar
3 / 4
10 µm pillar
QNFCF logo etched 100 µm deep into Si
4 / 4
QNFCF logo etched 100 µm deep into Si