Vendor: Oxford Instruments
Model: Plasmalab system 100 ICP380
Purpose: Plasma-based dry etching of metal thin films and III-V substrates (GaAs and InP)
Equipment description:
This Oxford Plasmalab100 is an inductively coupled plasma (ICP) based system that is configured for dielectrics, metal and III-V etching with chlorine, fluorine and hydrocarbon-based plasmas. The system is equipped with He backside cooling and has a temperature controlled electrode. The ICP process module is connected to a single automated wafer transfer load lock. For more information about available processes and disallowed processes, please consult the equipment wiki page.
System features and options:
- Gases available: Cl2, BCl3, SF6, C4F8, CHF3, H2, CH4, O2, N2, Ar
- Standard configuration to handle 4″ wafers. 6″ wafer process available upon request
- Mechanical clamp
- High density 380 mm ICP Source (2 MHz, 3 kW)
- 240 mm lower electrode (13.56 MHz, 300 W) with variable height
- Fluid and electrical temperature control: 0 to 400℃
- Typical operating pressure: 1 –100 mTorr
- Laser and optical end point detection
