ALD/PECVD cluster [OXFORD-cluster]

Vendor: Oxford Instruments

Model: System 100 PECVD / FlexAL ALD (thermal/plasma) cluster system

Purpose: Deposition of various thin films via ALD and PECVD

Equipment wiki link

Equipment description:

The Oxford cluster is comprised of a FlexAL atomic layer deposition (ALD) system and a PlasmaLab 100 Plasma-enhanced chemical vapor deposition (PECVD) system which share a common loadlock. The FlexAL ALD tool is capable of ALD deposition using plasma assisted or thermal reaction mechanisms.  The ALD chamber is ideal for depositing highly uniform, thin and conformal dielectric films at low temperatures. The PlasmaLab 100 PECVD system is suitable for deposition of high-quality, uniform and low stress SiO₂ and Si₃N₄ films at low temperatures.  Additional information about permitted processes and equipment manuals are on the equipment wiki page.

Commissioned film types available via ALD:

• Al₂O₃ plasma process (TMA precursor)
• Al₂O₃ thermal process (TMA precursor)
• TiO₂ plasma process (TIIP precursor)
• HfO₂ plasma process (TEMAH precursor)
• SiO₂ plasma process (BTBAS precursor)

Commissioned film types available via PECVD:

• Ammonia free silicon nitride (SiH₄-N₂)
• Low stress silicon nitride (SiH₄-NH₃)
• Silicon dioxide (SiH₄-N₂O)
• Silicon oxynitride (SiH₄-N₂O-NH₃)
• Amorphous silicon a-Si:N:H

The Silicon dioxide (TEOS) recipe has been decommissioned.

Additional information:

• This system is configured to handle 4″ wafers with typical thickness of 550 μm (approx). Configuration for wafers from 2″ to 200 mm is possible but requires staff intervention.
• Photoresist-coated wafers are strictly prohibited since the system supports high temperature processes which are not compatible with photoresist films