Vendor:
Scienta
Omicron
Model:
Custom
Multi-Module
UHV
Growth
&
Analysis
System: Topological
Insulators
MBE
Growth
Chamber
Purpose: MBE
growth
of
topological
insulator
thin
films
Characteristics:
- UHV chamber with base pressure better than 5e-10 Torr
- 2" diameter substrate handling (and smaller)
- Substrate rotation 0 to 30 rpm
- Substrate heating to 1000C
- High-temperature (1900C) effusion cell (1)
- Medium-temperature (1400C) effusion cell (1)
- Low-temperature (1000C) effusion cells (2)
- RHEED system for in-situ thin film growth analysis
- Valved Tellurium cracker
- Automated thin film deposition monitor and control
Permitted depositions:
- TBD