Model: LFC150G

Purpose: Surface cleaning and passivation of semiconductor packages

Equipment description:

The LFC150 G is configured for batch plasma processing of strips placed in slotted magazines and of wafers. The UCP plasma cleaning concept is based on chemical reactions of gas-phase species with the contaminated surface. This is accomplished by exposing the substrates to a DC plasma. The system is equipped with a high vacuum pumping station consisting of a purged turbomolecular pump, a rotary vane pump, a high vacuum valve, and a hydrogen generator. The LFC150 G has an excellent throughput and is suited for a wide variety of applications. Multi-step processing allows to combine the advantages of both, hydrogen and nitrogen plasma.

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System features and options:

  • Remote direct current (DC) plasma for effective cleaning with extremely low bias for┬áreduced┬ádamage to sensitive samples.
  • On board H2 generator for standard Ar/H2 plasma process
  • Available N2 gas
  • Redundant filamants for reliable operation
  • In-chamber temperature sensor to avoid thermal damage to samples

Typical applications:

  • Cleaning samples prior to wire bonding for improved bond strength
  • Cleaning dies prior to die bonding
  • Cleaning prior to die encapsulation