JEOL JEM-F200 scanning transmission electron microscope with electron energy loss spectroscopy [JEOL-TEM]

Vendor: JEOL

Model: JEM-F200 F2 scanning transmission electron microscope (S/TEM) with electron energy loss spectroscopy (EELS) and energy-dispersive spectroscopy (EDS)

Purpose: Cold field emission transmission electron microscope for material analysis

Equipment wiki link

Equipment description:

The JEOL JEM-F200 "F2" is a cold field emission transmission electron microscope. The system is equipped with a JEOL 100 mm2 silicon drift detector (SDD) for EDS and a Gatan Continuum ER 1065 2k x 2k pixel EELS detector.

System features:

  • Non-abberation corrected, cold field emission gun (CFEG)
  • Minimum energy resolution of 0.3 eV or less at 200 kV
  • Brightness of 8x108 A/cm2 or better at 200 kV
  • Magnification range of 100x to 150,000,000x
  • Gatan 4k x 4k pixel OneView 1095 camera
  • Analytical capabilities:
    • JEOL 100 mm2 SDD EDS detector
    • Gatan Continuum ER 1065 2k x 2k pixel EELS detector
TEM image of Si crystal structure

Si (110) resolution standard

multiple TEM images of nanowires

InP Nanowires grown by Au-VLS – S. Gibson. Nanowire micrographs with EELS mapping and EDS spectra.

TEM bright field image of InP

InGaAs/InAlAs on InP sample (Wasilewski group) TEM on-zone HR Bright-field

TEM image of III/V heterostructure

InGaAs/InAlAs on InP sample (Wasilewski group), EELS and EDS maps side by side

TEM image of Si crystal structure
1 / 4
Si (110) resolution standard
multiple TEM images of nanowires
2 / 4
InP Nanowires grown by Au-VLS – S. Gibson. Nanowire micrographs with EELS mapping and EDS spectra.
TEM bright field image of InP
3 / 4
InGaAs/InAlAs on InP sample (Wasilewski group) TEM on-zone HR Bright-field
TEM image of III/V heterostructure
4 / 4
InGaAs/InAlAs on InP sample (Wasilewski group), EELS and EDS maps side by side