Vendor: AJA International Inc.
Purpose: Etching of thin films via Ar ion milling
The AJA ion mill is designed for the physical etching of thin films via Ar ion bombardment. Any material can be etched with very low selectivity.This system is equipped with a Kaufman and Robinson 220 mm RF ion source capable of operation from 100-1200 V. The water-cooled sample holder is capable of accepting samples from small pieces up to 6″ in diameter and incorporates 0-90° tilting as well as rotation. It is also equipped with a Hiden Analytical secondary ion mass spectroscopy (SIMS) probe to enable milling endpoint detection and a 2″ sputter gun to enable RF sputtering of a passivation material once the milling process is complete. The chamber base pressure should be better than 2e-7 Torr. For more information about available processes and disallowed processes, please consult the equipment wiki page.
System features and options:
- Substrates up to 6″ in diameter
- Water-cooled substrate holder with motorized rotation and 0-90° tilting
- SIMS end-point detection
- RF sputtering of passivation layer
- Milling uniformity of SiO2 on Si better than ±3% over a 150 mm wafer