Vendor: Oxford Instruments

Model: System 100 PECVD / FlexAL ALD (thermal/plasma) cluster system

Purpose: Deposition of various thin films via ALD and PECVD

Equipment wiki link

Equipment description:

The Oxford cluster is comprised of a FlexAL atomic layer deposition (ALD) system and a PlasmaLab 100 Plasma-enhanced chemical vapor deposition (PECVD) system which share a common loadlock. The FlexAL ALD tool is capable of ALD deposition using plasma assisted or thermal reaction mechanisms.  The ALD chamber is ideal for depositing highly uniform, thin and conformal dielectric films at low temperatures. The PlasmaLab 100 PECVD system is suitable for deposition of high-quality, uniform and low stress SiO2 and Si3N4 films at low temperatures.  Additional information about permitted processes and equipment manuals are on the equipment wiki page.

Commissioned film types available via ALD:

  • Al2O3 plasma process (TMA precursor)
  • Al2O3 thermal process (TMA precursor)
  • TiO2 plasma process (TIIP precursor)
  • HfO2 plasma process (TEMAH precursor)
  • SiO2 plasma process (BTBAS precursor)

Commissioned film types available via PECVD:

  • Silicon nitride (ammonia free)
  • Silicon nitride (SiH4-NH3)
  • Silicon dioxide (SiH4-N2O)
  • Silicon oxynitride (SiH4-N2O-NH3)
  • Amorphous silicon

The Silicon dioxide (TEOS) recipe has been decommissioned.

Additional information:

  • This system is configured to handle 4″ wafers with typical thickness of 550 μm (approx). Configuration for wafers from 2″ to 200 mm is possible but requires staff intervention.
  • Photoresist-coated wafers are strictly prohibited since the system supports high temperature processes which are not compatible with photoresist films