Vendor: Oxford Instruments
Model: Plasmalab system 100 ICP380
Purpose: Plasma-based dry etching of silicon
Equipment description:
This Oxford Plasmalab100 is an inductively coupled plasma system (ICP) that is configured for deep reactive ion etching (DRIE) of silicon using the patented Bosch process. The system is equipped with He backside cooling and has a temperature controlled electrode. The ICP process module is connected to a single automated wafer transfer load lock. For more information about available processes and disallowed processes, please consult the equipment wiki page.
System features and options:
- Gases available: SF6, C4F8, O2
- Standard configuration to handle 4″ Si wafers. 6″ wafer process available upon request
- Mechanical clamp
- High density 380 mm ICP Source (2 MHz, 3 kW)
- 240 mm lower electrode (13.56 MHz, 300 W)
- Standard chuck temperature: 15℃
- Typical operating pressure: 1 –100 mTorr
- Low frequency (340 kHz) biasing and pulsing to suppress notching effect
Oxford DRIE system
ARDE
10 µm pillar
QNFCF logo etched 100 µm deep into Si
