Vendor: Scienta Omicron
Model: Custom Multi-Module UHV Growth & Analysis System: Topological Insulators MBE Growth Chamber
Purpose: MBE growth of topological insulator thin films
Characteristics:
- UHV chamber with base pressure better than 5e-10 Torr
- 2" diameter substrate handling (and smaller)
- Substrate rotation 0 to 30 rpm
- Substrate heating to 1000C
- High-temperature (1900C) effusion cell (1)
- Medium-temperature (1400C) effusion cell (1)
- Low-temperature (1000C) effusion cells (2)
- RHEED system for in-situ thin film growth analysis
- Valved Tellurium cracker
- Automated thin film deposition monitor and control
Permitted depositions:
- TBD
