MASc Seminar: Characterization of a new type HSQ resist and Nano-gap Electrode Fabrication Using Electron Beam LithographyExport this event to calendar

Tuesday, July 3, 2018 — 1:00 PM EDT

Candidate:  Jiashi Shen
Title:  Characterization of a new type HSQ resist and Nano-gap Electrode Fabrication Using Electron Beam Lithography
Date:  July 3, 2018
Time:  1:00 PM
Place:  EIT 3145
Supervisor(s):  Cui, Bo

Abstract:
This thesis involves two projects. The first one is using two-step exposure EBL to fabricate Nano-gap. To explore the ultra-thin gap, some resolution enhancement method which is proven effective by previous work are applicate.  Different from other studies regarding high-resolution EBL, this project is dealing with block structures with Nanogap rather than Nanostructure.

The second study work reported on this thesis is about testing a new type HSQ resist in the solid state. To evaluate the performance of a lithography resist, some basic property such as spin coating parameter, sensitivity, contrast, and mechanic strength is tested. Helpfully, it can provide reference information for subsequent. And this new type resist are also used to define dense line array to explore its ultimate resolution potential.

Location 
EIT
Room 3145
200 University Avenue West

Kitchener, ON N2L 3G1
Canada

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