Candidate:
Jiashi
Shen
Title:
Characterization
of
a
new
type
HSQ
resist
and
Nano-gap
Electrode
Fabrication
Using
Electron
Beam
Lithography
Date:
July
3,
2018
Time:
1:00
PM
Place:
EIT
3145
Supervisor(s):
Cui,
Bo
Abstract:
This
thesis
involves
two
projects.
The
first
one
is
using
two-step
exposure
EBL
to
fabricate
Nano-gap.
To
explore
the
ultra-thin
gap,
some
resolution
enhancement
method
which
is
proven
effective
by
previous
work
are
applicate.
Different
from
other
studies
regarding
high-resolution
EBL,
this
project
is
dealing
with
block
structures
with
Nanogap
rather
than
Nanostructure.
The
second
study
work
reported
on
this
thesis
is
about
testing
a
new
type
HSQ
resist
in
the
solid
state.
To
evaluate
the
performance
of
a
lithography
resist,
some
basic
property
such
as
spin
coating
parameter,
sensitivity,
contrast,
and
mechanic
strength
is
tested.
Helpfully,
it
can
provide
reference
information
for
subsequent.
And
this
new
type
resist
are
also
used
to
define
dense
line
array
to
explore
its
ultimate
resolution
potential.
Tuesday, July 3, 2018 1:00 pm
-
1:00 pm
EDT (GMT -04:00)