Candidate: Amir Amini
Title: Time-Domain Power Transistor Behavioural Models for Effective Design of High Power Amplifiers
Date: April 26, 2023
Time: 4:00 PM
Place: EIT 3151-53
Supervisor(s): Boumaiza, Slim
Abstract:
This Seminar presents the research work on a new time-domain multi-tone distortion (TD-MTD) model suitable for accurately predicting the non-linear behavior of packaged high power radio frequency (RF) transistors over a range of discrete non-uniformly distributed frequencies. This proposed TD-MTD model uses a single expression rather than multiple distinct frequency specific behavioral models to describe the underlying behavior of the high power RF transistor at multiple fundamental frequencies. Furthermore its extraction is carried out using a time-domain representation of the travelling waves that can be acquired using a generic vector load-pull characterization system and without imposing additional requirements. The proposed model is extracted as an artificial neural network (ANN) and is implemented as a Netlist to serve in a harmonic balance simulator based power amplifier design process. The proposed model was validated in two phases. First, its ability to reproduce the large-signal behavior of a high power RF LDMOS transistor was demonstrated in simulation. Then, the TD-MTD model was used to validate the design of a high power two-way asymmetric Doherty power amplifier and the simulated output-power-dependent power efficiency, AM/AM, AM/PM and input return loss characteristics are compared to those obtained in measurement. The excellent agreement between the simulation and measurement results confirms the usefulness of the proposed model despite the simplicity of its extraction routine and measurement data.