Candidate: Mayuri Sritharan
Date: November 17, 2025
Time: 10:00am
Location: online
Supervisor: Dr. Youngki Yoon
All are welcome.
Abstract:
The unique polarization responses in ferroelectric (FE) and antiferroelectric (AFE) materials have generated great research interest for their application in steep-switching devices and neuromorphic hardware. This seminar will provide an investigation into FE and AFE-based devices for both logic and memory applications through the lens of fully numerical simulations. Inclusion of a ferroelectric layer in the conventional field-effect transistor (FET) architecture can be used to realize negative capacitance FETs (NCFETs) which demonstrate steep-switching performance through internal voltage amplification. Further, a physics-based Jiles-Atherton model is employed to demonstrate FE and AFE-based tunnel junctions which can emulate synaptic functions for artificial neural networks.