Guo-Xing Miao, PEng

Guo-Xing Miao is an Associate Professor in the Electrical and Computer Engineering Department and is cross-appointed to the Institute for Quantum Computing at the University of Waterloo. Professor Miao's research interests lie in spintronics, which use precise electron spin manipulation for information processing. His work places a strong emphasis on nanodevices established on newly emerging spin platforms, such as synthetic diamonds and topological insulators, where information can be processed coherently on the quantum level, rather than digitally on the classical level. The interwined transport of electrons, spins and ions in solid-state devices establishes the forefront for developing semiconductor compatible materials platforms ready for chip integration.

• Topological quantum computing, Tellurides MBE, Spin memory and logic devices, Spintronics, Iontronics, Memristor, Neuromorphic computing

• 2006, PhD, Brown University, Providence USA

• 2017 Ontario Early Researcher Award

• ECE 231 - Semiconductor Physics and Devices
  • Taught in 2023
• ECE 403 - Thermal Physics
  • Taught in 2019, 2020, 2021, 2022
• ECE 630 - Physics and Models of Semiconductor Devices
  • Taught in 2020, 2021
• ECE 635 - Fabrication in the Nanoscale: Principles, Technology, & Applications
  • Taught in 2024
• NANO 600 - Introduction to Nanotechnology
  • Taught in 2021, 2023
• NANO 601 - Characterization of Nanomaterials
  • Taught in 2022, 2023, 2024
• NANO 701 - Fundamentals of Nanotechnology
  • Taught in 2019
• NANO 702 - Nanotechnology Tools
  • Taught in 2019
• NE 353 - Nanoprobing and Lithography
  • Taught in 2024

* Only courses taught in the past 5 years are displayed.

• Islam R., Shi Y., de Oliveira Silva G.V., Sachdev M., and Miao G.-X., Volatile and Nonvolatile Programmable Iontronic Memristor with Lithium Imbued TiOx for Neuromorphic Computing Applica, ACS Nano, Volume 18, 22045-22054, 2024.
• Wang C., Chen B., Wang T., Silva G.V.D.O., Xu Z., Miao G.-X., Huang Y., and Fu J., Sustainable interface regulation enabled by a bismuth solid-state surfactant effect for Zn-free anodes, Energy and Environmental Science, Volume 17, 5429-5439, 2024.
• Islam R., Li P., Beg M., Sachdev M., and Miao G.-X., Helimagnet-based nonvolatile multi-bit memory units, Applied Physics Letters, Volume 122, 2023.
• Li Z., Liu H., Zhao Z., Zhang Q., Fu X., Li X., Gu F., Zhong H., Pan Y., Chen G., Li Q., Li H., Chen Y., Gu L., Jin K., Yan S., Miao G.-X., Ge C., and Li Q., Space-Charge Control of Magnetism in Ferromagnetic Metals: Coupling Giant Magnitude and Robust Endurance, Advanced Materials, Volume 35, 2022.
• Li H., Hu Z., Xia Q., Zhang H., Li Z., Wang H., Li X., Zuo F., Zhang F., Wang X., Ye W., Li Q., Long Y., Li Q., Yan S., Liu X., Zhang X., Yu G., and Miao G.-X., Operando Magnetometry Probing the Charge Storage Mechanism of CoO Lithium-Ion Batteries, Advanced Materials, Volume 33, 2021.
• Li Q., Li H., Xia Q., Hu Z., Zhu Y., Yan S., Ge C., Zhang Q., Wang X., Shang X., Fan S., Long Y., Gu L., Miao G.-X., Yu G., and Moodera J.S., Extra storage capacity in transition metal oxide lithium-ion batteries revealed by in situ magnetometry, Nature Materials, Volume 20, 76-83, 2021.
• Long G., Xue Q., Li Q., Shi Y., Li L., Cheng L., Li P., Zhang J., Zhang X., Guo H., Fu J., Li S., Moodera J.S., and Miao G.-X., Interfacial Control via Reversible Ionic Motion in Battery-Like Magnetic Tunnel Junctions, Advanced Electronic Materials, Volume 7, 2021.
• Li Z., Zhang Y., Li X., Gu F., Zhang L., Liu H., Xia Q., Li Q., Ye W., Ge C., Li H., Hu H., Li S., Long Y.-Z., Yan S., Miao G.-X., and Li Q., Reacquainting the Electrochemical Conversion Mechanism of FeS2Sodium-Ion Batteries by Operando Magnetometry, Journal of the American Chemical Society, Volume 127, 12800-12808, 2021.
• Li P., Han A., Zhang C., He X., Zhang J., Zheng D., Cheng L., Li L.-J., Miao G.-X., and Zhang X.-X., Mobility-Fluctuation-Controlled Linear Positive Magnetoresistance in 2D Semiconductor Bi2O2Se Nanoplates, ACS Nano, Volume 14, 11319-11326, 2021.
• Li P., Zhang C., Wen Y., Cheng L., Nichols G., Cory D.G., Miao G.-X., and Zhang X.-X., Anisotropic planar Hall effect in the type-II topological Weyl semimetal WTe2, Physical Review B, Volume 100, 2021.

• Lithium-Imbued Memristors: A Versatile Platform for Brain-Inspired Computing