Chettypalayam Selvakumar

Chettypalayam (Selva) Selvakumar is a Professor in the Department of Electrical and Computer Engineering at the University of Waterloo.

Professor Selvakumar’s research interests include bipolar and field effect devices modeling and experimental process technologies. His current interests lie in Silicon/Germanium (SiGe) Devices and low temperature and integrable IC technologies. On the modelling side, Professor Selvakumar’s efforts are concentrated on developing insightful analytical models and accurate D.C. and A.C. Device Models for Bipolar and Field Effect Devices over a wide range of temperatures. Efforts in process modeling are currently focussed on dopant diffusion in implantation-formed alloy semiconductors. Research interests on the experimental side are focused on integrable process technologies. Professor Selvakumar is also interested in silicon-on-insulator technologies and buried silicides for high performance IC technologies, sensors and optoelectronics.

• Bipolar and field effect devices
• modeling
• SiGe devices
• integrable technologies
• Photodetectors (UV VIS IR)
• Silicon Devices & Nanotechnology

• 1985, Doctorate, PhD, Indian Institute of Technology, Delhi
• 1974, Master's, MTech, Indian Institute of Technology, Delhi
• 1972, Bachelor's, BE, College of Engineering, Guindy

• ECE 209 - Electronic and Electrical Properties of Materials
  • Taught in 2020
• ECE 231 - Semiconductor Physics and Devices
  • Taught in 2021, 2022
• ECE 331 - Electronic Devices
  • Taught in 2019
• ECE 433 - Fabrication Technologies for Micro and Nano Devices
  • Taught in 2020
• ECE 631 - Microelectronic Processing Technology
  • Taught in 2019, 2020, 2021, 2022
• ECE 700 - Special Topics in Electrical and Computer Engineering
  • Taught in 2019
• ECE 730 - Special Topics in Solid State Devices
  • Taught in 2020
• GENE 123 - Electrical Circuits and Instrumentation
  • Taught in 2019, 2020, 2021, 2022

• Shiri, Daryoush and Verma, Amit and Selvakumar, CR and Anantram, MP, Reversible modulation of spontaneous emission by strain in silicon nanowires, Scientific reports, 2, 2012
• Kwok, KH and Selvakumar, CR, PAPERS-Compound Semiconductor Devices-Profile Design Considerations for Minimizing Base Transit Time in SiGe HBTs of All Levels of Injection Before Onset of Kirk Effect, IEEE Transactions on Electron Devices, 48(8), 2001, 1540 - 1549
• Kwok, KH and Selvakumar, CR, Profile design considerations for minimizing base transit time in SiGe HBTs for all levels of injection before onset of Kirk effect, IEEE Transactions on Electron Devices, 48(8), 2001, 1540 - 1549
• Mohajerzadeh, S and Selvakumar, CR, Fabrication of N+-N iso-type diodes with LPCVD-grown polysilicon on silicon structures, IEEE Transactions on Electron Devices, 44(11), 1997, 2041 - 2043
• Mohajerzadeh, S and Selvakumar, CR, A simple model for low energy ion-solid interactions, Journal of applied physics, 81(7), 1997, 3003 - 3006

• Nanotech powers an 'impossible' silicon breakthrough

• Currently considering applications from graduate students. A completed online application is required for admission; start the application process now.
• Has Approved Doctoral Dissertation Supervisor (ADDS) status