Youngki Yoon

Associate Professor
Youngki Yoon

Contact information

Phone: 519-888-4567 x31860
Location: QNC 5623

Biography summary

Professor Youngki Yoon is an Associate Professor in the Department of Electrical and Computer Engineering at the University of Waterloo. His research group focuses on understanding physics of non-equilibrium phenomena in nanosystems with relevance to device applications by means of modeling and simulations. Building on rigorous fundamental understanding, he has developed his own quantum transport simulator using Non-Equilibrium Green’s Function (NEGF) method. Atomistic simulations may enable predictive analysis of nanoscale devices for which direct experimental investigation can often be extremely challenging and prohibitively expensive.

He received his Ph.D. in Electrical and Computer Engineering from the University of Florida (Gainesville, FL) in 2008, where his research mainly focused on ballistic transport in carbon nanotube devices. Then he worked as a postdoctoral research at the University of California, Berkeley where he has done pioneering work in the field of non-equilibrium quantum transport, including the first demonstration of dissipative simulation using the NEGF formalism for the realistic size of devices (>200 nm) and the first-ever trial that included both phonon and roughness scattering for graphene nanoribbon transistors.

Research interests

  • Nanoscale transistors and sensors
  • Computer simulations for emerging devices
  • Engineering tool development for analysis and optimization

Education

  • 2008, Doctorate, Electrical and Computer Engineering, University of Florida
  • 2005, Master of Science, Electrical and Computer Engineering, University of Florida
  • 1999, Bachelor of Engineering, Materials Science & Engineering, Korea University

Courses*

  • ECE 633 - Nanoelectronics
    • Taught in 2020, 2021, 2022, 2023, 2024
  • NE 102 - Introduction to Nanomaterials Health Risk; Nanotechnology Engineering Practice
    • Taught in 2019
  • NE 131 - Physics for Nanotechnology Engineering
    • Taught in 2019, 2020, 2023
  • NE 201 - Nanotoxicology; Nanotechnology Engineering Practice
    • Taught in 2019
  • NE 202 - Nanomaterials and Environmental Impact; Nanotechnology Engineering Practice
    • Taught in 2020
  • NE 242 - Semiconductor Physics and Devices
    • Taught in 2021, 2022, 2024
  • NE 301 - Nanomaterials and Human Risks, Benefits; Nanotechnology Engineering Practice
    • Taught in 2021
  • NE 471 - Nano-electronics
    • Taught in 2021, 2022, 2023, 2024

* Only courses taught in the past 5 years are displayed.

Selected/recent publications

  • Yin, Demin and Yoon, Youngki, Design strategy of two-dimensional material field-effect transistors: Engineering the number of layers in phosphorene FETs, Journal of Applied Physics, 119(21), 2016
  • Yin, Demin and Han, Gyuchull and Yoon, Youngki, Scaling Limit of Bilayer Phosphorene FETs, IEEE Electron Device Letters, 36(9), 2015, 978 - 980
  • Jung, Chulseung and Kim, Seung Min and Moon, Hyunseong and Han, Gyuchull and Kwon, Junyeon and Hong, Young Ki and Omkaram, Inturu and Yoon, Youngki and Kim, Sunkook and Park, Jozeph, Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector, Scientific reports, 5, 2015
  • Kwon, Junyeon and Hong, Young Ki and Han, Gyuchull and Omkaram, Inturu and Choi, Woong and Kim, Sunkook and Yoon, Youngki, Phototransistors: Giant Photoamplification in Indirect-Bandgap Multilayer MoS2 Phototransistors with Local Bottom-Gate Structures (Adv. Mater. 13/2015), Advanced Materials, 27(13), 2015, 2126 - 2126
  • Kwon, Junyeon and Hong, Seongin and Hong, Young Ki and Lee, Sungho and Yoo, Geonwook and Yoon, Youngki and Kim, Sunkook, Photosensitivity enhancement in hydrogenated amorphous silicon thin-film phototransistors with gate underlap, Applied Physics Letters, 107(20), 2015

Graduate studies