-
8" diameter wafer to single integrated circuit (IC) capability
- Automated process control for repeatable results
-
Various
process
parameters
such
as:
- Platen rotational speed
- Carrier rotational speed, down force, and back pressure
- Carrier sweep speed and linear travel
- Platen temperature
- Slurry flow rate
- In-situ conditioning of the polishing pad
- Multiple memory locations for process storage
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