-
Wafer transfer using a robotic arm within a load-lock
- Load-lock uses a mechanical vacuum pump
- Reactor chamber uses a dry pump
- System is liquid cooled using an external chiller
- 8” diameter wafer chuck
- Wafer chuck temperature: 400 °C
- RF power: 300 watts (maximum)
- Fully automated processing from pump-down to deposition
- Two gas manifolds that are mixed at reactor shower-head
-
Gases
available
for
processes:
- CF4, N2, N20, SiH4, NH3