-
- Turbo pump backed by mechanical pump
- System is liquid cooled using an external chiller
- User manually loads wafers
- 8” diameter wafer chuck
- RF power: 600 watts (maximum)
- Inductively coupled plasma (ICP) power: 1000 watts (max)
- Fully automated processing from pump-down to deposition
- Single gas manifold
-
Gases
available
for
processes:
- CF4, SF6, O2, CHF3, He/O2 Mix