|
Week
1
|
Deposition
and
growth
of
a-Si:H
and
nc-Si
|
-
comparison
of
c-Si,
poly-Si,
nc-Si,
and
a-Si:H
in
terms
of
electronic
properties,
fabrication
cost,
deposition
limitations
and
application
areas
-
special
features
and
inherent
limits
of
each
material
-
a-Si:H,
poly-Si,
nc-Si
step-by-step
review:
growth,
structure,
states,
doping,
transport,
applications
-
deposition
techniques
-
growth
process
-
thin
film
growth
-
process
windows
and
process
parameter
control
|
|
Week
2
|
Structure
of
a-Si:H
and
nc-Si
films
|
-
An
introductory
review:
SRO,
MRO,
LRO
-
SRO:
RDF,
strained
bonds,
stress,
defect
formation
-
MRO:
voids,
stress,
overcoordination
-
LRO:
crystallinity,
amorphous
tissue
-
phonons,
Raman,
a-Si
and
nc-Si
-
hydrogen
in
silicon:
bonding,
FTIR,
trapping
and
effusion,
DSC
-
the
role
of
hydrogen
|
|
Week
3
|
Electronic
States
and
Defects
in
a-Si:H
|
-
extended
and
localized
states,
Anderson’s
localization
-
a-Si:H
bandgap
structure,
bandgap
models
-
band
tails,
density
of
states
measurements
-
Urbach
energy,
Tauc
plot
-
defects
in
c-Si
and
in
a-Si
-
defect
charge
states
in
a-Si:H,
charge
transfer
-
electron
spin
resonance
-
defect
energy
measurements
|
|
Week
4
|
Doping
of
a-Si:H
|
-
doping
mechanisms
in
c-Si,
nc-Si,
and
a-Si:H;
doping
efficiency
-
relationship
between
the
doping
and
defects
-
doping
models
|
|
Week
5
|
Metastability
in
a-Si:H
|
-
stable
and
metastable
states,
equilibration
-
relationship
between
the
structure
and
metastability:
models
and
experiments
-
metastability
and
electronic
properties
-
metastable
effects
in
a-Si:H
(Staebler-Wronski
effect,
threshold
voltage
shift,
particle
bombardment,
doping
efficiency
change)
|
|
Week
6
|
Electronic
Transport
in
a-Si:H
and
nc-Si
|
-
types
of
conductivity
in
c-Si,
μc-Si,
and
a-Si:H;
transport
through
extended,
localized,
and
defect
states
-
temperature
dependence,
Meyer-Neldel
rule
-
carrier
mobility
|
|
Week
7
|
Interfaces
and
Contacts
with
a-Si:H
and
nc-Si
|
-
Schottky
contacts,
ohmic
contacts
-
interface
defects,
their
measurements
-
relationship
between
the
structure,
material
quality,
and
the
interface
states
-
interfaces
with
doped
layers,
nitrides,
and
oxides
|
|
Week
8
|
Poly-Si
and
nc-Si
|
-
fabrication
-
structure
-
carrier
transport
-
impurities
and
doping
-
device
applications
|
|
Week
9
|
Device
Applications:
photovolatics
|
-
physical
principles
-
energy
conversion
losses
-
device
structure
-
performance
characterization
-
different
materials
for
solar
cells
(poly-Si,
mc-Si,
nc-Si,
a-Si:H,
quantum
structures)
|
|
Week
10
|
Device
Applications:
displays
and
imaging
|
-
different
types
of
displays
-
liquid
crystal
displays:
physical
basics
-
passive
matrix
and
active
matrix
displays
-
physical
basics
of
imaging
-
visible,
IR,
UV,
and
x-ray
imaging
-
device
structures
and
fabrication
|
|
Week
11
|
Device
Applications:
macroelectronics
|
-
the
concept
of
macroelectronics
-
consumer
electronics
and
disposable
electronics
-
flexible
electronics
-
"sensitive
skin"
and
"smart
clothes"
-
biomedical
sensors
and
systems
|
|
Week
12
|
Course
Project
Presentations
|
|