ECE 730 Topic 29 - Computational Nanoelectronics
INSTRUCTOR
Professor
Youngki
Yoon
Office
hours:
by
appointment
(via
email)
LECTURE HOURS
To be determined
DESCRIPTION
The purpose of this course is to convey a new viewpoint to understand the current flow in nanoscale devices. Great success of nanotechnology has brought numerous opportunities in nanoelectronics, but the properties of nanosystems cannot be well described by a classical way where empirical fitting parameters have been widely adopted. This course provides the conceptual framework to explore nanoscale materials and devices based on quantum mechanics. Through hands-on coding assignments, students can grasp physical insights into confined systems and carrier transport in novel semiconductor devices.
EXPECTED BACKGROUND
Basic Matrix Algebra, Prior Programming Experience
COURSE/TEACHING OBJECTIVES
This course will help students with no or limited prior background in computational nanoelectronics
- acquire the basic concepts of quantum mechanics within the relevant topics of nanoscale devices,
- develop in-depth understanding of nanomaterials and nanoscale devices,
- acquire the knowledge and skill in the field of atomistic quantum simulation, and
- develop hands-on coding experience for electronic band structure and device simulation.
SYLLABUS
-
Introduction
(1
week)
Energy level diagram; Electron/Hole conduction; Origin of current flow; Quantum of conductance -
Schrödinger
equation
(1
week)
Hydrogen atom; Finite difference method; Boundary conditions -
Self-consistent
electrostatics
(1
week)
Self-consistent field; Multi-electron picture -
Basis
functions
(1
week)
Basis functions as a computational tool; Basis functions as a conceptual tool; Equilibrium density matrix -
Band
structure
of
semiconductors
(1
week)
Chain of atoms; Brillouin zone; Reciprocal lattice; Band structure of common semiconductors -
Subbands
of
nanomaterials
(1
week)
Quantum wells, wires and dots; Graphene and carbon nanotubes; Density of states; Minimum resistance of a wire -
Nanoscale
MOS
Capacitance
(1.5
weeks)
Model Hamiltonian; Electron density; Quantum capacitance -
Open
systems
(1.5
weeks)
Contacts; Level broadening; Local density of states -
Carrier
transport
(2
weeks)
Non-equilibrium density matrix; Transmission; Coherent/Incoherent transport - Project Presentation (1 week)
CODING ASSIGNMENT
Assignment will be given for the topics covered in the class. Matlab (or equivalent software package) will be used extensively. Examples are as follows.
- Current through a simple system with constant density of states
- Charge in a system with self-consistent field
- Eigenvalues under different boundary conditions
- Band structure of confined systems such as carbon nanotubes and graphene
- Transmission of a nanoscale device
TEXTBOOK
Quantum Transport: Atom to Transistor, Supriyo Datta, Cambridge University Press (2013)
GENERAL REFERENCES
- Electronic Transport in Mesoscopic Systems, Supriyo Datta, Cambridge University Press (1997)
- Nanoscale Transistors, Mark Lundstrom and Jing Guo, Springer (2006)
- Quantum Mechanics, B. H. Bransden and C. J. Joachain, Addison-Wesley (2000)
- Physical Properties of Carbon Nanotubes, R. Saito, G. Dresselhaus and M. S. Dresselhaus, Imperial College Press (1998)
MARKING SCHEME
- Assignment: 30%
- Project: 20%
- Final Exam: 50%