ECE 730 Topic 16 - Embedded Semiconductor Memories
Instructor
Professor Manoj Sachdev
Calendar description
Static and dynamic behavior of MOS transistor short channel effects and scaling trends. Memory architectures and building blocks. SRAM, DRAM, and CAM cell design and analysis. Low- power, low-voltage circuit techniques. Memory yield, redundancy and reliability issues.
Prerequisite: ECE 445
Lecture topics | Number of lectures |
MOS
Transistor
Review
| 2 |
Static
Random
Access
Memory
Circuits
| 12 |
Dynamic
Random
Access
Memory
Circuits
| 6 |
Content
Addressable
Memory
Circuits
| 6 |
Memory
Yield,
Redundancy
and
Reliability
| 10 |
Total lecture hours: 36
References
- K. Itoh, “VLSI Memory Chip Design,” Springer, 2001, ISBN 3-540-67820-4
- J. Rabaey et. al., “Digital Integrated Circuits: A Design Perspective, 2nd edition, Printice Hall, 2003, ISBN 0-13-090996-3
- Lecture Notes
Project
An individual project is an essential component of this course.