RAC1 Journal Club/Seminar Series

The study of high-efficiency magnetization reversal using spin-orbit coupling

Dongseuk Kim, Quantum Technology Institute, KRISS, South Korea

In recent years, the magnetic random-access memory (MRAM) have been attracting attention as a next generation memory device due to their fast switching speed and non-volatility characteristics. The biggest challenge for the switching device using a magnetic material is an easy magnetization reversal. I have been studying a switching device from the past to the present, and I am going to deal with the magnetization reversal technique using the spin Hall phenomenon based on spin-orbit coupling. In addition, I intend to help understanding of the magnetic multi-layer by introducing the film preparation and the spin Hall phenomenon together.