Block Co-polymer Self Assembly
In order to meet the increasing demand of developing electronic devices with minimum size, new methods were being studied to deal with miniaturization challenges. Among the photolithography techniques, the bottom-up based method on the self-assembly has significantly attracted researchers and the semiconductor industries. Among other advantages of this method, low processing cost, high resolution, and large scale processing are the more prominent ones. This thesis mainly focuses on explaining the use of block copolymer self-assembly in nanolithography, and their ability to phase separate into ordered and chemically distinct domains of 10s nm size. Moreover, this thesis presents an effective way to obtain a perpendicular self- assembled PS-b-PMMA with very high aspect ratio which is preferred for pattern transfer. To deliver this unique orientation, 3-MPTS is used to neutralize the surface. This method depends on vapor deposition of 3-MPTS at room temperature for two hours or less prior to deposition of PS-b-PMMA.