High temperature plasma-enhanced chemical vapor deposition (PECVD)

High temperature single chamber Plasma-enhanced chemical vapor depositionThe system is state-of-the-art and made by MVSystems, Inc., for the deposition of thin film semiconductor materials and devices.

It is rated to operate at temperatures up to 1000°C at the substrate. The system consists of one water cooled RF PECVD chamber.

The process gases are SiH4, PH3/H2, CF4, NH3, He, and N2. The system is suitable for poly-Si and nanostructured Si (e.g., Si nanowires, etc.) deposition.