![WLOS Cluster Sputtering System](/giga-to-nanoelectronics-centre/sites/default/files/uploads/images/wlos_aa_0.jpg)
The system features a substrate heater for sample treatment at temperatures up to 400 degrees Celsius.
The deposition rate of this system is in the range of 0.05 - 0.2 um/hr with very uniform film thickness and good conductivity.
The system features a substrate heater for sample treatment at temperatures up to 400 degrees Celsius.
The deposition rate of this system is in the range of 0.05 - 0.2 um/hr with very uniform film thickness and good conductivity.