WLOS cluster sputtering system

WLOS sputtering provides a maximum deposition area of 39cm x 27cm. Substrate holders for 3", 5" and 6" circular and square wafers are available for Cr and Al metals using a direct current power supply and Mo using a radio frequency source.

The system features a substrate heater for sample treatment at temperatures up to 400 degrees Celsius.

The deposition rate of this system is in the range of 0.05 - 0.2 um/hr with very uniform film thickness and good conductivity.

User fees for the WLOS cluster sputtering tool.