IQC Student Seminar Featuring Nachiket Sherlekar

Wednesday, May 22, 2024 12:00 pm - 1:00 pm EDT (GMT -04:00)

Stable and Localized Emission from Ambipolar Dopant-Free Lateral p-n Junctions

Combining the architectures of a dopant-free lateral p-n junction and a single-electron pump in a GaAs/AlGaAs heterostructure material system could yield high-rate, electrically-driven quantum emitters with performances surpassing the competition in quantum sensing, communication and cryptography. Observed drawbacks of the dopant-free p-n junctions are a rapid decay in electroluminescence during operation, as well as delocalized emission that lowers the measured quantum efficiency. This talk details novel measurement protocols and gate architectures implemented by us to overcome these challenges.

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