IQC Student Seminar Featuring Nachiket Sherlekar

Combining the architectures of a dopant-free lateral p-n junction and a single-electron pump in a GaAs/AlGaAs heterostructure material system could yield high-rate, electrically-driven quantum emitters with performances surpassing the competition in quantum sensing, communication and cryptography. Observed drawbacks of the dopant-free p-n junctions are a rapid decay in electroluminescence during operation, as well as delocalized emission that lowers the measured quantum efficiency. This talk details novel measurement protocols and gate architectures implemented by us to overcome these challenges.